JP4426139B2 - 蛍光物質を使用したイメージ・センサの応答向上 - Google Patents

蛍光物質を使用したイメージ・センサの応答向上 Download PDF

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Publication number
JP4426139B2
JP4426139B2 JP2001500338A JP2001500338A JP4426139B2 JP 4426139 B2 JP4426139 B2 JP 4426139B2 JP 2001500338 A JP2001500338 A JP 2001500338A JP 2001500338 A JP2001500338 A JP 2001500338A JP 4426139 B2 JP4426139 B2 JP 4426139B2
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Japan
Prior art keywords
image sensor
wavelength
fluorescent layer
reflector
photons
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Expired - Fee Related
Application number
JP2001500338A
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English (en)
Japanese (ja)
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JP2003529955A (ja
JP2003529955A5 (https=
Inventor
ブース，ローレンス・エイ・ジュニア
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Intel Corp
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Intel Corp
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Publication of JP2003529955A publication Critical patent/JP2003529955A/ja
Publication of JP2003529955A5 publication Critical patent/JP2003529955A5/ja
Application granted granted Critical
Publication of JP4426139B2 publication Critical patent/JP4426139B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
JP2001500338A 1999-06-02 2000-05-17 蛍光物質を使用したイメージ・センサの応答向上 Expired - Fee Related JP4426139B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/325,005 1999-06-02
US09/325,005 US6597398B1 (en) 1999-06-02 1999-06-02 Image sensor response enhancement using fluorescent phosphors
PCT/US2000/013718 WO2000074140A1 (en) 1999-06-02 2000-05-17 Image sensor response enhancement using fluorescent phosphors

Publications (3)

Publication Number Publication Date
JP2003529955A JP2003529955A (ja) 2003-10-07
JP2003529955A5 JP2003529955A5 (https=) 2007-07-05
JP4426139B2 true JP4426139B2 (ja) 2010-03-03

Family

ID=23266043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001500338A Expired - Fee Related JP4426139B2 (ja) 1999-06-02 2000-05-17 蛍光物質を使用したイメージ・センサの応答向上

Country Status (9)

Country Link
US (1) US6597398B1 (https=)
EP (1) EP1183733B1 (https=)
JP (1) JP4426139B2 (https=)
KR (1) KR20020059254A (https=)
AU (1) AU4857200A (https=)
CA (1) CA2373595C (https=)
DE (1) DE60035586T2 (https=)
TW (1) TW492256B (https=)
WO (1) WO2000074140A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1199886B1 (en) * 2000-10-13 2004-03-10 Applied Scintillation Technologies Ltd. Infrared camera with phosphor coated CCD
US7139028B2 (en) * 2000-10-17 2006-11-21 Canon Kabushiki Kaisha Image pickup apparatus
TWI229539B (en) * 2003-02-27 2005-03-11 Elecvision Inc Small image sensing device and image sensing element thereof
US7277602B1 (en) * 2003-03-17 2007-10-02 Biomorphic Vlsi, Inc. Method and system for pixel bus signaling in CMOS image sensors
JP4950541B2 (ja) * 2006-04-05 2012-06-13 キヤノン株式会社 固体撮像素子
US7541596B2 (en) 2006-07-05 2009-06-02 Omnivision Technologies, Inc. Method and apparatus for increasing light absorption in an image sensor using energy conversion layer
US20080074505A1 (en) * 2006-07-26 2008-03-27 Intematix Corporation Phosphors for enhancing sensor responsivity in short wavelength regions of the visible spectrum
US7830434B2 (en) * 2006-08-16 2010-11-09 Intematix Corporation Semiconductor color image sensor responsive at shorter wavelengths
TW200915551A (en) * 2007-05-10 2009-04-01 Koninkl Philips Electronics Nv Spectrum detector and manufacturing method therefore
DE102007053307A1 (de) * 2007-11-08 2009-05-14 Robert Bosch Gmbh Kamera zur Erfassung eines Fahrzeugumfeldes
KR20110124354A (ko) * 2009-03-01 2011-11-16 타우 사이언스 코포레이션 고체 상태 광원을 활용하는 고속 양자 효율 측정 장치
KR101686079B1 (ko) * 2010-12-27 2016-12-13 삼성전자주식회사 깊이 영상 생성 장치 및 방법
US9635325B2 (en) * 2015-05-29 2017-04-25 Semiconductor Components Industries, Llc Systems and methods for detecting ultraviolet light using image sensors
EP3270125A1 (en) * 2016-07-12 2018-01-17 ams AG Optical sensor, spectrometer and method for a spectrometer
US11061119B2 (en) * 2018-10-10 2021-07-13 Sensors Unlimited, Inc. Pixels for time of flight (TOF) imaging
US12142622B2 (en) * 2020-08-17 2024-11-12 Au Optronics Corporation Sensing device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4603259A (en) * 1983-04-08 1986-07-29 General Electric Company X-ray image converter devices using rare earth oxyhalide phosphors
JPH02276996A (ja) * 1989-04-18 1990-11-13 Seiko Instr Inc Ｘ線イメージセンサー
JPH04322467A (ja) 1991-04-22 1992-11-12 Olympus Optical Co Ltd 固体撮像装置
JPH04326763A (ja) 1991-04-26 1992-11-16 Olympus Optical Co Ltd 固体撮像装置
JPH06205768A (ja) * 1992-08-18 1994-07-26 Philips Electron Nv Ｘ線検査装置
DE69432283T2 (de) * 1993-12-01 2004-01-22 Sharp K.K. Display für dreidimensionale Bilder
US5631704A (en) * 1994-10-14 1997-05-20 Lucent Technologies, Inc. Active pixel sensor and imaging system having differential mode
EP0878007B1 (en) 1996-01-22 2005-05-11 California Institute Of Technology Active pixel sensor array with electronic shuttering
US5990506A (en) * 1996-03-20 1999-11-23 California Institute Of Technology Active pixel sensors with substantially planarized color filtering elements
JPH10149776A (ja) * 1996-11-18 1998-06-02 Kasei Optonix Co Ltd プラズマディスプレイ用蛍光膜
JP3003597B2 (ja) 1996-11-18 2000-01-31 日本電気株式会社 固体撮像素子
US5976411A (en) * 1997-12-16 1999-11-02 M.A. Hannacolor Laser marking of phosphorescent plastic articles
US6208393B1 (en) * 1998-09-30 2001-03-27 Intel Corporation Liquid crystal color filter with integrated infrared blocking

Also Published As

Publication number Publication date
AU4857200A (en) 2000-12-18
CA2373595C (en) 2006-01-10
CA2373595A1 (en) 2000-12-07
DE60035586D1 (de) 2007-08-30
EP1183733A1 (en) 2002-03-06
KR20020059254A (ko) 2002-07-12
US6597398B1 (en) 2003-07-22
JP2003529955A (ja) 2003-10-07
EP1183733B1 (en) 2007-07-18
WO2000074140A1 (en) 2000-12-07
TW492256B (en) 2002-06-21
DE60035586T2 (de) 2008-04-17
US20030133029A1 (en) 2003-07-17

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