DE60033312D1 - Plasmabehandlungsvorrichtung und -verfahren - Google Patents

Plasmabehandlungsvorrichtung und -verfahren

Info

Publication number
DE60033312D1
DE60033312D1 DE60033312T DE60033312T DE60033312D1 DE 60033312 D1 DE60033312 D1 DE 60033312D1 DE 60033312 T DE60033312 T DE 60033312T DE 60033312 T DE60033312 T DE 60033312T DE 60033312 D1 DE60033312 D1 DE 60033312D1
Authority
DE
Germany
Prior art keywords
plasma processing
substrate
plasma
chamber
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60033312T
Other languages
English (en)
Other versions
DE60033312T2 (de
Inventor
D Bailey
M Schoepp
J Hemker
H Wilcoxson
Andras Kuthi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE60033312D1 publication Critical patent/DE60033312D1/de
Publication of DE60033312T2 publication Critical patent/DE60033312T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Chemical Vapour Deposition (AREA)
DE60033312T 1999-11-15 2000-11-14 Plasmabehandlungsvorrichtung und -verfahren Expired - Lifetime DE60033312T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US439661 1989-11-22
US09/439,661 US6341574B1 (en) 1999-11-15 1999-11-15 Plasma processing systems
PCT/US2000/031322 WO2001037315A1 (en) 1999-11-15 2000-11-14 Plasma processing systems and method therefor

Publications (2)

Publication Number Publication Date
DE60033312D1 true DE60033312D1 (de) 2007-03-22
DE60033312T2 DE60033312T2 (de) 2007-11-22

Family

ID=23745623

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60033312T Expired - Lifetime DE60033312T2 (de) 1999-11-15 2000-11-14 Plasmabehandlungsvorrichtung und -verfahren

Country Status (10)

Country Link
US (1) US6341574B1 (de)
EP (1) EP1230666B1 (de)
JP (1) JP4704645B2 (de)
KR (1) KR100768019B1 (de)
CN (1) CN1253918C (de)
AT (1) ATE353472T1 (de)
AU (1) AU1918801A (de)
DE (1) DE60033312T2 (de)
TW (1) TW478297B (de)
WO (1) WO2001037315A1 (de)

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US7422775B2 (en) * 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
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KR101285265B1 (ko) * 2009-02-06 2013-07-12 캐논 아네르바 가부시키가이샤 플라즈마 처리장치, 플라즈마 처리방법 및 피처리 기판을 포함한 소자 제조방법
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CN103839742A (zh) * 2012-11-28 2014-06-04 中微半导体设备(上海)有限公司 用于等离子体处理器的磁场分布调节装置及其调节方法
JP6008771B2 (ja) * 2013-01-21 2016-10-19 東京エレクトロン株式会社 多層膜をエッチングする方法
KR101629214B1 (ko) * 2013-11-29 2016-06-13 서울대학교산학협력단 자장 제어를 통한 플라즈마 쉐이핑이 가능한 플라즈마 처리 장치
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Also Published As

Publication number Publication date
AU1918801A (en) 2001-05-30
WO2001037315A1 (en) 2001-05-25
EP1230666B1 (de) 2007-02-07
EP1230666A1 (de) 2002-08-14
KR100768019B1 (ko) 2007-10-18
ATE353472T1 (de) 2007-02-15
CN1421043A (zh) 2003-05-28
KR20020060969A (ko) 2002-07-19
DE60033312T2 (de) 2007-11-22
CN1253918C (zh) 2006-04-26
US6341574B1 (en) 2002-01-29
JP4704645B2 (ja) 2011-06-15
TW478297B (en) 2002-03-01
JP2003514389A (ja) 2003-04-15

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