DE60030802D1 - Bildsensor mit Sättigungszeitmessung zur Erweiterung des Dynamikbereichs - Google Patents
Bildsensor mit Sättigungszeitmessung zur Erweiterung des DynamikbereichsInfo
- Publication number
- DE60030802D1 DE60030802D1 DE60030802T DE60030802T DE60030802D1 DE 60030802 D1 DE60030802 D1 DE 60030802D1 DE 60030802 T DE60030802 T DE 60030802T DE 60030802 T DE60030802 T DE 60030802T DE 60030802 D1 DE60030802 D1 DE 60030802D1
- Authority
- DE
- Germany
- Prior art keywords
- expanding
- image sensor
- dynamic range
- time measurement
- saturation time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005259 measurement Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Scanning Arrangements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US311529 | 1994-09-23 | ||
US09/311,529 US6069377A (en) | 1999-05-13 | 1999-05-13 | Image sensor incorporating saturation time measurement to increase dynamic range |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60030802D1 true DE60030802D1 (de) | 2006-11-02 |
DE60030802T2 DE60030802T2 (de) | 2007-09-13 |
Family
ID=23207321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60030802T Expired - Lifetime DE60030802T2 (de) | 1999-05-13 | 2000-04-20 | Bildsensor mit Messsung der Sättigungszeitmessung zur Erweiterung des Dynamikbereichs |
Country Status (6)
Country | Link |
---|---|
US (1) | US6069377A (de) |
EP (1) | EP1052846B1 (de) |
JP (1) | JP4374115B2 (de) |
KR (1) | KR100718404B1 (de) |
DE (1) | DE60030802T2 (de) |
TW (1) | TW448339B (de) |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6552745B1 (en) * | 1998-04-08 | 2003-04-22 | Agilent Technologies, Inc. | CMOS active pixel with memory for imaging sensors |
FR2781929B1 (fr) * | 1998-07-28 | 2002-08-30 | St Microelectronics Sa | Capteur d'image a reseau de photodiodes |
US6246043B1 (en) * | 1998-09-22 | 2001-06-12 | Foveon, Inc. | Method and apparatus for biasing a CMOS active pixel sensor above the nominal voltage maximums for an IC process |
US6859227B1 (en) * | 1999-04-23 | 2005-02-22 | Micron Technology, Inc. | Active pixel sensor with reduced fixed pattern noise |
EP1148346B1 (de) * | 2000-04-20 | 2010-03-10 | Datalogic Automation S.r.l. | Verfahren zur Kalibrierung einer photoelektrischen Zelle |
WO2002025934A2 (en) * | 2000-09-25 | 2002-03-28 | Sensovation Ag | Image sensor device, apparatus and method for optical measurements |
US6946635B1 (en) | 2000-10-05 | 2005-09-20 | Ess Technology, Inc. | System for improving the dynamic range of solid-state imaging devices |
US6566697B1 (en) | 2000-11-28 | 2003-05-20 | Dalsa, Inc. | Pinned photodiode five transistor pixel |
US7088388B2 (en) * | 2001-02-08 | 2006-08-08 | Eastman Kodak Company | Method and apparatus for calibrating a sensor for highlights and for processing highlights |
FR2820883B1 (fr) | 2001-02-12 | 2003-06-13 | St Microelectronics Sa | Photodiode a grande capacite |
FR2820882B1 (fr) | 2001-02-12 | 2003-06-13 | St Microelectronics Sa | Photodetecteur a trois transistors |
US6813652B2 (en) * | 2001-04-11 | 2004-11-02 | Chelsio Communications, Inc. | Reduced-overhead DMA |
WO2002084033A1 (en) * | 2001-04-17 | 2002-10-24 | David Vincent Byrne | A trench cover |
FR2824665B1 (fr) * | 2001-05-09 | 2004-07-23 | St Microelectronics Sa | Photodetecteur de type cmos |
US7420602B2 (en) | 2001-05-29 | 2008-09-02 | Samsung Semiconductor Israel R&D Center (Sirc) | Cmos imager for cellular applications and methods of using such |
US7738013B2 (en) * | 2001-05-29 | 2010-06-15 | Samsung Electronics Co., Ltd. | Systems and methods for power conservation in a CMOS imager |
US6642503B2 (en) * | 2001-06-13 | 2003-11-04 | Texas Instruments Incorporated | Time domain sensing technique and system architecture for image sensor |
WO2003001567A2 (en) | 2001-06-20 | 2003-01-03 | R3 Logic, Inc. | High resolution, low power, wide dynamic range imager with embedded pixel processor and dram storage |
US20030206236A1 (en) * | 2002-05-06 | 2003-11-06 | Agfa Corporation | CMOS digital image sensor system and method |
US20050177133A1 (en) * | 2002-07-08 | 2005-08-11 | Nielsen Henrik L. | External urinary catheter |
JP4172216B2 (ja) | 2002-07-16 | 2008-10-29 | ソニー株式会社 | 撮像装置 |
FR2844129B1 (fr) * | 2002-09-03 | 2004-10-29 | Suisse Electronique Microtech | Procede et capteur pour determiner le contraste local d'une scene observee, par detection de la luminance emanant de cette scene |
US6888573B2 (en) * | 2002-10-31 | 2005-05-03 | Motorola, Inc. | Digital pixel sensor with anti-blooming control |
US7830435B2 (en) * | 2003-09-03 | 2010-11-09 | Eastman Kodak Company | Image sensor and image capture system with extended dynamic range |
US6873282B1 (en) | 2004-03-04 | 2005-03-29 | Charles Douglas Murphy | Differential time-to-threshold A/D conversion in digital imaging arrays |
US7126512B2 (en) * | 2004-03-19 | 2006-10-24 | Charles Douglas Murphy | Comparing circuits for time-to-threshold A/D conversion in digital imaging arrays |
GB0412296D0 (en) * | 2004-06-02 | 2004-07-07 | Council Cent Lab Res Councils | Imaging device |
KR100646867B1 (ko) | 2004-12-21 | 2006-11-23 | 삼성전자주식회사 | 비선형 영상을 보정하는 촬상장치 및 그 방법 |
GB2432065A (en) * | 2005-11-01 | 2007-05-09 | Isis Innovation | Image sensor with comparator and logarithmic output |
US20070263127A1 (en) * | 2006-03-07 | 2007-11-15 | Transchip, Inc. | Low Noise Gamma Function In Digital Image Capture Systems And Methods |
US7868928B2 (en) | 2006-03-15 | 2011-01-11 | Samsung Electronics Co., Ltd. | Low noise color correction matrix function in digital image capture systems and methods |
EP1858245A1 (de) | 2006-05-17 | 2007-11-21 | STMicroelectronics (Research & Development) Limited | Hochleistungsfotosensor |
US7326903B2 (en) * | 2006-06-29 | 2008-02-05 | Noble Peak Vision Corp. | Mixed analog and digital pixel for high dynamic range readout |
US7692130B2 (en) * | 2006-11-01 | 2010-04-06 | International Business Machines Corporation | CMOS imaging sensor having a third FET device with a gate terminal coupled to a second diffusion region of a first FET device and a first terminal coupled to a row select signal |
KR100834763B1 (ko) * | 2006-11-14 | 2008-06-05 | 삼성전자주식회사 | 동적 촬영 대역의 확장을 위한 이미지 센서 및 화소에수광된 광량을 측정하는 방법 |
AT504582B1 (de) | 2006-11-23 | 2008-12-15 | Arc Austrian Res Centers Gmbh | Verfahren zur generierung eines bildes in elektronischer form, bildelement für einen bildsensor zur generierung eines bildes sowie bildsensor |
KR101338353B1 (ko) * | 2007-05-30 | 2013-12-06 | 삼성전자주식회사 | 영상 촬상 장치 및 방법 |
JP2009081705A (ja) * | 2007-09-26 | 2009-04-16 | Panasonic Corp | 固体撮像装置、受光強度測定装置、および受光強度測定方法 |
JP5269456B2 (ja) * | 2008-03-26 | 2013-08-21 | 株式会社東芝 | イメージセンサおよびその駆動方法 |
GB2460260A (en) * | 2008-05-22 | 2009-11-25 | Isis Innovation | Image sensor |
US7964840B2 (en) * | 2008-06-19 | 2011-06-21 | Omnivision Technologies, Inc. | High dynamic range image sensor including polarizer and microlens |
DE102009044535A1 (de) * | 2008-11-16 | 2010-07-22 | Christoph Bacher | Bildsensor |
US8625012B2 (en) * | 2009-02-05 | 2014-01-07 | The Hong Kong University Of Science And Technology | Apparatus and method for improving dynamic range and linearity of CMOS image sensor |
KR100919834B1 (ko) * | 2009-03-26 | 2009-10-01 | 삼성탈레스 주식회사 | 열상 장비 검출기 보호 방법 및 장치 |
GB0920750D0 (en) * | 2009-11-26 | 2010-01-13 | Isis Innovation | High dynamic range pixel |
US8218046B1 (en) * | 2009-12-17 | 2012-07-10 | Jai, Inc. USA | Monochrome/color dual-slope traffic camera system |
US8445828B2 (en) | 2010-07-01 | 2013-05-21 | Silicon Optronics, Inc. | High dynamic range image sensor with in pixel memory |
IL212289A (en) * | 2011-04-13 | 2016-08-31 | Semi-Conductor Devices - An Elbit Systems - Rafael Partnership | Circuit and method for reading image signals |
US9036065B1 (en) | 2012-08-16 | 2015-05-19 | Rambus Inc. | Shared-counter image sensor |
WO2015016991A1 (en) * | 2013-07-31 | 2015-02-05 | Massachusetts Institute Of Technology | Methods and apparatus for true high dynamic range imaging |
US9654714B2 (en) | 2013-11-01 | 2017-05-16 | Silicon Optronics, Inc. | Shared pixel with fixed conversion gain |
DE102013222305A1 (de) * | 2013-11-04 | 2015-05-07 | Conti Temic Microelectronic Gmbh | Verfahren zur Bildaufnahme durch ein Fahrerassistenzsystem |
US9843750B2 (en) | 2014-03-25 | 2017-12-12 | Samsung Electronics Co., Ltd. | Methods of calibrating linear-logarithmic image sensors |
US9526468B2 (en) | 2014-09-09 | 2016-12-27 | General Electric Company | Multiple frame acquisition for exposure control in X-ray medical imagers |
US9591247B2 (en) | 2014-12-22 | 2017-03-07 | Google Inc. | Image sensor having an extended dynamic range upper limit |
US20160312517A1 (en) | 2015-04-22 | 2016-10-27 | Ford Global Technologies, Llc | Vehicle and method of opening and closing a door of the vehicle |
RU2016121630A (ru) | 2015-06-03 | 2017-12-06 | ФОРД ГЛОУБАЛ ТЕКНОЛОДЖИЗ, ЭлЭлСи | Строящая карту дальностей камера для внутренней стороны двери |
RU167596U1 (ru) * | 2015-08-03 | 2017-01-10 | Акционерное общество "НПО "Орион" | Устройство детектирования лазерных импульсов в ячейке фотоприемной матрицы ИК-диапазона |
US9838628B2 (en) | 2016-03-16 | 2017-12-05 | Sony Corporation | Detecting quantities beyond sensor saturation |
EP3319311B1 (de) | 2016-11-03 | 2019-10-23 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Synchronbildsensor mit zeitkodierung |
US10686996B2 (en) | 2017-06-26 | 2020-06-16 | Facebook Technologies, Llc | Digital pixel with extended dynamic range |
US10598546B2 (en) | 2017-08-17 | 2020-03-24 | Facebook Technologies, Llc | Detecting high intensity light in photo sensor |
JP6987603B2 (ja) * | 2017-10-26 | 2022-01-05 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の駆動方法、および電子機器 |
US10827142B2 (en) * | 2018-03-02 | 2020-11-03 | Facebook Technologies, Llc | Digital pixel array with adaptive exposure |
US10923523B2 (en) * | 2018-04-16 | 2021-02-16 | Facebook Technologies, Llc | Multi-photodiode pixel cell |
US11906353B2 (en) * | 2018-06-11 | 2024-02-20 | Meta Platforms Technologies, Llc | Digital pixel with extended dynamic range |
JP7338983B2 (ja) * | 2019-02-18 | 2023-09-05 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の駆動方法、および電子機器 |
CN109951657B (zh) * | 2019-04-22 | 2021-04-23 | Oppo广东移动通信有限公司 | 像素电路及图像传感器 |
US11943561B2 (en) | 2019-06-13 | 2024-03-26 | Meta Platforms Technologies, Llc | Non-linear quantization at pixel sensor |
US11936998B1 (en) | 2019-10-17 | 2024-03-19 | Meta Platforms Technologies, Llc | Digital pixel sensor having extended dynamic range |
US11902685B1 (en) | 2020-04-28 | 2024-02-13 | Meta Platforms Technologies, Llc | Pixel sensor having hierarchical memory |
US11956560B2 (en) | 2020-10-09 | 2024-04-09 | Meta Platforms Technologies, Llc | Digital pixel sensor having reduced quantization operation |
US12022218B2 (en) | 2020-12-29 | 2024-06-25 | Meta Platforms Technologies, Llc | Digital image sensor using a single-input comparator based quantizer |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4479062A (en) * | 1981-02-06 | 1984-10-23 | Asahi Kogaku Kogyo Kabushiki Kaisha | Photo-electric conversion device with accumulation time control |
US4399464A (en) * | 1981-05-04 | 1983-08-16 | General Dynamics, Pomona Division | Signal processor for an array of CID radiation detector elements |
JPH07112252B2 (ja) * | 1984-07-27 | 1995-11-29 | 株式会社ニコン | 固体撮像装置 |
US5182658A (en) * | 1988-07-27 | 1993-01-26 | Canon Kabushiki Kaisha | Image pickup apparatus for controlling accumulation time in photoelectric elements |
US5117118A (en) * | 1988-10-19 | 1992-05-26 | Astex Co., Ltd. | Photoelectric switch using an integrated circuit with reduced interconnections |
JP2911521B2 (ja) * | 1990-02-15 | 1999-06-23 | キヤノン株式会社 | センサ装置 |
JP2953297B2 (ja) * | 1994-03-30 | 1999-09-27 | 日本電気株式会社 | 受光素子およびその駆動方法 |
JPH07333060A (ja) * | 1994-06-07 | 1995-12-22 | Nikon Corp | 測光装置 |
JPH07333059A (ja) * | 1994-06-07 | 1995-12-22 | Nikon Corp | 測光装置 |
US5642163A (en) * | 1994-08-31 | 1997-06-24 | Matsushita Electric Industrial Co., Ltd. | Imaging apparatus for switching the accumulative electric charge of an image pickup device |
JP3590806B2 (ja) * | 1994-09-07 | 2004-11-17 | 株式会社ニコン | イメージセンサーシステムおよび自動焦点検出装置 |
FR2735616B1 (fr) * | 1995-06-16 | 1997-08-22 | France Telecom | Capteur d'image a semi-conducteurs a transformation integree d'histogramme de pixels |
US5768540A (en) * | 1995-12-13 | 1998-06-16 | Nikon Corporation | Photometric apparatus |
FR2756682B1 (fr) * | 1996-12-03 | 1999-05-14 | Schneider Electric Sa | Cellule photoelectrique a amplification stabilisee |
JPH10190367A (ja) * | 1996-12-27 | 1998-07-21 | Rohm Co Ltd | 光電気変換回路 |
-
1999
- 1999-05-13 US US09/311,529 patent/US6069377A/en not_active Expired - Lifetime
-
2000
- 2000-04-05 TW TW089106219A patent/TW448339B/zh not_active IP Right Cessation
- 2000-04-20 EP EP00201432A patent/EP1052846B1/de not_active Expired - Lifetime
- 2000-04-20 DE DE60030802T patent/DE60030802T2/de not_active Expired - Lifetime
- 2000-05-10 JP JP2000137372A patent/JP4374115B2/ja not_active Expired - Lifetime
- 2000-05-12 KR KR1020000025277A patent/KR100718404B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20010020835A (ko) | 2001-03-15 |
EP1052846A2 (de) | 2000-11-15 |
JP2001008101A (ja) | 2001-01-12 |
TW448339B (en) | 2001-08-01 |
EP1052846B1 (de) | 2006-09-20 |
US6069377A (en) | 2000-05-30 |
EP1052846A3 (de) | 2003-08-13 |
DE60030802T2 (de) | 2007-09-13 |
JP4374115B2 (ja) | 2009-12-02 |
KR100718404B1 (ko) | 2007-05-14 |
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