DE60026705D1 - Verfahren und vorrichtung zum nassätzen von halbleitersubstraten - Google Patents
Verfahren und vorrichtung zum nassätzen von halbleitersubstratenInfo
- Publication number
- DE60026705D1 DE60026705D1 DE60026705T DE60026705T DE60026705D1 DE 60026705 D1 DE60026705 D1 DE 60026705D1 DE 60026705 T DE60026705 T DE 60026705T DE 60026705 T DE60026705 T DE 60026705T DE 60026705 D1 DE60026705 D1 DE 60026705D1
- Authority
- DE
- Germany
- Prior art keywords
- nutritizing
- semiconductor substrates
- substrates
- semiconductor
- nutritizing semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/12—Condition responsive control
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99201954 | 1999-06-17 | ||
EP99201954 | 1999-06-17 | ||
PCT/EP2000/005345 WO2000079583A1 (en) | 1999-06-17 | 2000-06-08 | Method and apparatus for wet-etching semiconductor wafers |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60026705D1 true DE60026705D1 (de) | 2006-05-11 |
DE60026705T2 DE60026705T2 (de) | 2006-11-02 |
Family
ID=8240320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60026705T Expired - Lifetime DE60026705T2 (de) | 1999-06-17 | 2000-06-08 | Verfahren und vorrichtung zum nassätzen von halbleitersubstraten |
Country Status (7)
Country | Link |
---|---|
US (1) | US7018482B1 (de) |
EP (1) | EP1112591B1 (de) |
JP (1) | JP2003502863A (de) |
KR (1) | KR100715064B1 (de) |
DE (1) | DE60026705T2 (de) |
TW (1) | TW468202B (de) |
WO (1) | WO2000079583A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW468202B (en) * | 1999-06-17 | 2001-12-11 | Koninkl Philips Electronics Nv | Method of manufacturing electronic devices, and apparatus for carrying out such a method |
DE10130936B4 (de) * | 2001-06-27 | 2004-04-29 | Infineon Technologies Ag | Herstellungsverfahren für ein Halbleiterbauelement mittels Atomschichtabscheidung/ALD |
US7879694B1 (en) | 2004-07-13 | 2011-02-01 | National Semiconductor Corporation | System and method for applying a pre-gate plasma etch in a semiconductor device manufacturing process |
KR100676598B1 (ko) * | 2005-04-01 | 2007-01-30 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
JP4809122B2 (ja) * | 2005-05-17 | 2011-11-09 | アプリシアテクノロジー株式会社 | 燐酸溶液中の珪素濃度測定装置及び測定方法 |
US8545636B2 (en) * | 2006-07-27 | 2013-10-01 | Atmel Corporation | Conductivity control of water content in solvent strip baths |
WO2020033405A1 (en) * | 2018-08-08 | 2020-02-13 | Tokyo Electron Limited | Method utilizing using post etch pattern encapsulation |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2979843A (en) * | 1955-11-25 | 1961-04-18 | North American Aviation Inc | Etch rate compensated process timer |
JPS60114579A (ja) * | 1983-11-25 | 1985-06-21 | Hitachi Ltd | エッチング液の制御方法 |
US4996160A (en) * | 1987-06-09 | 1991-02-26 | The Dow Chemical Company | Method and apparatus for quantitative measurement of ionic and organic contaminants remaining on cleaned surfaces |
JPH03283488A (ja) * | 1990-03-30 | 1991-12-13 | Fujitsu Ltd | プリント基板の後洗浄方法 |
JP3203786B2 (ja) * | 1992-08-07 | 2001-08-27 | 株式会社デンソー | シリコンのエッチング方法および装置 |
US5788801A (en) * | 1992-12-04 | 1998-08-04 | International Business Machines Corporation | Real time measurement of etch rate during a chemical etching process |
US5582746A (en) * | 1992-12-04 | 1996-12-10 | International Business Machines Corporation | Real time measurement of etch rate during a chemical etching process |
US5439569A (en) * | 1993-02-12 | 1995-08-08 | Sematech, Inc. | Concentration measurement and control of hydrogen peroxide and acid/base component in a semiconductor bath |
JPH09129588A (ja) * | 1995-10-31 | 1997-05-16 | Fujitsu Ltd | エッチング液の濃度管理方法及びエッチング装置 |
US5779927A (en) * | 1997-01-27 | 1998-07-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Modified reflux etcher controlled by pH or conductivity sensing loop |
JPH10326769A (ja) * | 1997-05-26 | 1998-12-08 | Mitsubishi Materials Shilicon Corp | 半導体ウェーハ処理溶液の管理方法およびその制御装置 |
US6261845B1 (en) * | 1999-02-25 | 2001-07-17 | Cfmt, Inc. | Methods and systems for determining chemical concentrations and controlling the processing of semiconductor substrates |
TW468202B (en) * | 1999-06-17 | 2001-12-11 | Koninkl Philips Electronics Nv | Method of manufacturing electronic devices, and apparatus for carrying out such a method |
-
2000
- 2000-04-20 TW TW089107468A patent/TW468202B/zh not_active IP Right Cessation
- 2000-06-08 DE DE60026705T patent/DE60026705T2/de not_active Expired - Lifetime
- 2000-06-08 KR KR1020017002035A patent/KR100715064B1/ko not_active IP Right Cessation
- 2000-06-08 JP JP2001505053A patent/JP2003502863A/ja not_active Withdrawn
- 2000-06-08 EP EP00942042A patent/EP1112591B1/de not_active Expired - Lifetime
- 2000-06-08 WO PCT/EP2000/005345 patent/WO2000079583A1/en active IP Right Grant
- 2000-06-16 US US09/595,310 patent/US7018482B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1112591B1 (de) | 2006-03-15 |
KR100715064B1 (ko) | 2007-05-07 |
US7018482B1 (en) | 2006-03-28 |
TW468202B (en) | 2001-12-11 |
EP1112591A1 (de) | 2001-07-04 |
WO2000079583A1 (en) | 2000-12-28 |
KR20010072723A (ko) | 2001-07-31 |
JP2003502863A (ja) | 2003-01-21 |
DE60026705T2 (de) | 2006-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NXP B.V., EINDHOVEN, NL |