DE60026705D1 - Verfahren und vorrichtung zum nassätzen von halbleitersubstraten - Google Patents

Verfahren und vorrichtung zum nassätzen von halbleitersubstraten

Info

Publication number
DE60026705D1
DE60026705D1 DE60026705T DE60026705T DE60026705D1 DE 60026705 D1 DE60026705 D1 DE 60026705D1 DE 60026705 T DE60026705 T DE 60026705T DE 60026705 T DE60026705 T DE 60026705T DE 60026705 D1 DE60026705 D1 DE 60026705D1
Authority
DE
Germany
Prior art keywords
nutritizing
semiconductor substrates
substrates
semiconductor
nutritizing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60026705T
Other languages
English (en)
Other versions
DE60026705T2 (de
Inventor
J Geomini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE60026705D1 publication Critical patent/DE60026705D1/de
Application granted granted Critical
Publication of DE60026705T2 publication Critical patent/DE60026705T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00Chemistry: analytical and immunological testing
    • Y10T436/12Condition responsive control

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE60026705T 1999-06-17 2000-06-08 Verfahren und vorrichtung zum nassätzen von halbleitersubstraten Expired - Lifetime DE60026705T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP99201954 1999-06-17
EP99201954 1999-06-17
PCT/EP2000/005345 WO2000079583A1 (en) 1999-06-17 2000-06-08 Method and apparatus for wet-etching semiconductor wafers

Publications (2)

Publication Number Publication Date
DE60026705D1 true DE60026705D1 (de) 2006-05-11
DE60026705T2 DE60026705T2 (de) 2006-11-02

Family

ID=8240320

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60026705T Expired - Lifetime DE60026705T2 (de) 1999-06-17 2000-06-08 Verfahren und vorrichtung zum nassätzen von halbleitersubstraten

Country Status (7)

Country Link
US (1) US7018482B1 (de)
EP (1) EP1112591B1 (de)
JP (1) JP2003502863A (de)
KR (1) KR100715064B1 (de)
DE (1) DE60026705T2 (de)
TW (1) TW468202B (de)
WO (1) WO2000079583A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW468202B (en) * 1999-06-17 2001-12-11 Koninkl Philips Electronics Nv Method of manufacturing electronic devices, and apparatus for carrying out such a method
DE10130936B4 (de) * 2001-06-27 2004-04-29 Infineon Technologies Ag Herstellungsverfahren für ein Halbleiterbauelement mittels Atomschichtabscheidung/ALD
US7879694B1 (en) 2004-07-13 2011-02-01 National Semiconductor Corporation System and method for applying a pre-gate plasma etch in a semiconductor device manufacturing process
KR100676598B1 (ko) * 2005-04-01 2007-01-30 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP4809122B2 (ja) * 2005-05-17 2011-11-09 アプリシアテクノロジー株式会社 燐酸溶液中の珪素濃度測定装置及び測定方法
US8545636B2 (en) * 2006-07-27 2013-10-01 Atmel Corporation Conductivity control of water content in solvent strip baths
WO2020033405A1 (en) * 2018-08-08 2020-02-13 Tokyo Electron Limited Method utilizing using post etch pattern encapsulation

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2979843A (en) * 1955-11-25 1961-04-18 North American Aviation Inc Etch rate compensated process timer
JPS60114579A (ja) * 1983-11-25 1985-06-21 Hitachi Ltd エッチング液の制御方法
US4996160A (en) * 1987-06-09 1991-02-26 The Dow Chemical Company Method and apparatus for quantitative measurement of ionic and organic contaminants remaining on cleaned surfaces
JPH03283488A (ja) * 1990-03-30 1991-12-13 Fujitsu Ltd プリント基板の後洗浄方法
JP3203786B2 (ja) * 1992-08-07 2001-08-27 株式会社デンソー シリコンのエッチング方法および装置
US5788801A (en) * 1992-12-04 1998-08-04 International Business Machines Corporation Real time measurement of etch rate during a chemical etching process
US5582746A (en) * 1992-12-04 1996-12-10 International Business Machines Corporation Real time measurement of etch rate during a chemical etching process
US5439569A (en) * 1993-02-12 1995-08-08 Sematech, Inc. Concentration measurement and control of hydrogen peroxide and acid/base component in a semiconductor bath
JPH09129588A (ja) * 1995-10-31 1997-05-16 Fujitsu Ltd エッチング液の濃度管理方法及びエッチング装置
US5779927A (en) * 1997-01-27 1998-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Modified reflux etcher controlled by pH or conductivity sensing loop
JPH10326769A (ja) * 1997-05-26 1998-12-08 Mitsubishi Materials Shilicon Corp 半導体ウェーハ処理溶液の管理方法およびその制御装置
US6261845B1 (en) * 1999-02-25 2001-07-17 Cfmt, Inc. Methods and systems for determining chemical concentrations and controlling the processing of semiconductor substrates
TW468202B (en) * 1999-06-17 2001-12-11 Koninkl Philips Electronics Nv Method of manufacturing electronic devices, and apparatus for carrying out such a method

Also Published As

Publication number Publication date
EP1112591B1 (de) 2006-03-15
KR100715064B1 (ko) 2007-05-07
US7018482B1 (en) 2006-03-28
TW468202B (en) 2001-12-11
EP1112591A1 (de) 2001-07-04
WO2000079583A1 (en) 2000-12-28
KR20010072723A (ko) 2001-07-31
JP2003502863A (ja) 2003-01-21
DE60026705T2 (de) 2006-11-02

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL