DE60023781D1 - Apparat und Verfahren zur Herstellung von Halbleitervorrichtungen - Google Patents

Apparat und Verfahren zur Herstellung von Halbleitervorrichtungen

Info

Publication number
DE60023781D1
DE60023781D1 DE60023781T DE60023781T DE60023781D1 DE 60023781 D1 DE60023781 D1 DE 60023781D1 DE 60023781 T DE60023781 T DE 60023781T DE 60023781 T DE60023781 T DE 60023781T DE 60023781 D1 DE60023781 D1 DE 60023781D1
Authority
DE
Germany
Prior art keywords
semiconductor devices
manufacturing semiconductor
manufacturing
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60023781T
Other languages
English (en)
Other versions
DE60023781T2 (de
Inventor
Satoshi Mashima
Katsuhiko Monoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60023781D1 publication Critical patent/DE60023781D1/de
Publication of DE60023781T2 publication Critical patent/DE60023781T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
DE2000623781 1999-01-29 2000-01-27 Apparat und Verfahren zur Herstellung von Halbleitervorrichtungen Expired - Lifetime DE60023781T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2227499 1999-01-29
JP2227499A JP3420960B2 (ja) 1999-01-29 1999-01-29 電子デバイス製造装置および電子デバイス製造方法

Publications (2)

Publication Number Publication Date
DE60023781D1 true DE60023781D1 (de) 2005-12-15
DE60023781T2 DE60023781T2 (de) 2006-07-20

Family

ID=12078192

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2000623781 Expired - Lifetime DE60023781T2 (de) 1999-01-29 2000-01-27 Apparat und Verfahren zur Herstellung von Halbleitervorrichtungen

Country Status (3)

Country Link
EP (1) EP1039501B1 (de)
JP (1) JP3420960B2 (de)
DE (1) DE60023781T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008004813A (ja) * 2006-06-23 2008-01-10 Sharp Corp シリコン系薄膜光電変換素子の製造方法、製造装置およびシリコン系薄膜光電変換素子
JP5390230B2 (ja) 2008-03-31 2014-01-15 日本碍子株式会社 シリコン系薄膜成膜装置及びその方法
JP5455405B2 (ja) 2008-03-31 2014-03-26 日本碍子株式会社 シリコン系薄膜量産方法
KR101489326B1 (ko) 2008-09-09 2015-02-11 삼성전자주식회사 기판의 처리 방법
AU2009292608B2 (en) * 2008-09-26 2010-10-21 Ngk Insulators, Ltd. Film forming apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3499284B2 (ja) * 1993-10-20 2004-02-23 株式会社アルバック プラズマＣＶＤによるａ−Ｓｉ：Ｈ膜の成膜方法
EP0653501B1 (de) * 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD-Verfahren und Vorrichtung

Also Published As

Publication number Publication date
JP3420960B2 (ja) 2003-06-30
DE60023781T2 (de) 2006-07-20
JP2000223424A (ja) 2000-08-11
EP1039501A2 (de) 2000-09-27
EP1039501A3 (de) 2003-09-10
EP1039501B1 (de) 2005-11-09

Similar Documents

Publication Publication Date Title
DE59912579D1 (de) Verfahren und Vorrichtung zur Herstellung von Packungen
DE60028912D1 (de) Verfahren zur Herstellung von Hableitervorrichtungen
DE69936050D1 (de) Graben-gate halbleiterbauelemente und verfahren zur deren herstellung
DE60042666D1 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE60113215D1 (de) Halbleitervorrichtung und Verfahren zu dessen Herstellung
DE60045363D1 (de) Verfahren und vorrichtung zur charakterisierung von farbgeräten
DE60210794D1 (de) Rotor-stator apparat und verfahren zur bildung von partikeln
DE60036829D1 (de) Wafer-Poliervorrichtung und -verfahren
DE60042184D1 (de) Verfahren und Zusammensetzung zur Entschichtung von Photoresist
DE69913106D1 (de) Verfahren und gerät zur roboterausrichtung
DE10216633B8 (de) Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung
DE50010130D1 (de) Verfahren zur herstellung von im-ohr-hörgeräten und im-ohr-hörgerät
DE60128338D1 (de) Verfahren und vorrichtung zur wafervorbereitung
DE60002630D1 (de) Verfahren und Vorrichtung zur Herstellung von Verpackungen
DE60023247D1 (de) Verfahren und apparat zur herstellung von eingebetteten integrierten flachspeichern
DE69930700D1 (de) Halbleitersubstrat und Verfahren zu seiner Herstellung
DE60034274D1 (de) Verfahren und Vorrichtung zum Ätzen von Silizium
DE69839723D1 (de) Verfahren und Vorrichtung zur Herstellung von Halbleiterkristallen
DE60105527D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer integrierten Schaltungsanordnung
DE60001521D1 (de) Vorrichtung und Verfahren zur Herstellung von Halbleiterbauelementen
DE59908270D1 (de) Verfahren und vorrichtung zur herstellung von bürsten
DE69834613D1 (de) Halbleiterbauelement und verfahren zur dessen herstellung
DE60045615D1 (de) Verfahren und gerät zur herstellung von kommunikationsverbindungen
DE69709230D1 (de) Verfahren und Vorrichtung zur Herstellung Halbleitern
DE69634395D1 (de) Methode und Vorrichtung zur Herstellung von Halbleiterbauelementen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition