DE60011255T2 - Grossflächiger infrarotbildpunkt mit kleiner masse und massgeschneidertem querschnitt - Google Patents

Grossflächiger infrarotbildpunkt mit kleiner masse und massgeschneidertem querschnitt Download PDF

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Publication number
DE60011255T2
DE60011255T2 DE60011255T DE60011255T DE60011255T2 DE 60011255 T2 DE60011255 T2 DE 60011255T2 DE 60011255 T DE60011255 T DE 60011255T DE 60011255 T DE60011255 T DE 60011255T DE 60011255 T2 DE60011255 T2 DE 60011255T2
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DE
Germany
Prior art keywords
pixel
microstructure
area
heat
connector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60011255T
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German (de)
English (en)
Other versions
DE60011255D1 (de
Inventor
E. Barrett COLE
E. Robert HIGASHI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23086997&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60011255(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of DE60011255D1 publication Critical patent/DE60011255D1/de
Application granted granted Critical
Publication of DE60011255T2 publication Critical patent/DE60011255T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/023—Particular leg structure or construction or shape; Nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Outer Garments And Coats (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE60011255T 1999-04-01 2000-03-10 Grossflächiger infrarotbildpunkt mit kleiner masse und massgeschneidertem querschnitt Expired - Lifetime DE60011255T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US283649 1999-04-01
US09/283,649 US6046485A (en) 1999-04-01 1999-04-01 Large area low mass IR pixel having tailored cross section
PCT/US2000/006223 WO2000060324A1 (en) 1999-04-01 2000-03-10 Large area low mass ir pixel having tailored cross section

Publications (2)

Publication Number Publication Date
DE60011255D1 DE60011255D1 (de) 2004-07-08
DE60011255T2 true DE60011255T2 (de) 2005-07-07

Family

ID=23086997

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60011255T Expired - Lifetime DE60011255T2 (de) 1999-04-01 2000-03-10 Grossflächiger infrarotbildpunkt mit kleiner masse und massgeschneidertem querschnitt

Country Status (7)

Country Link
US (1) US6046485A (enExample)
EP (1) EP1166065B1 (enExample)
JP (1) JP4700196B2 (enExample)
AT (1) ATE268468T1 (enExample)
CA (1) CA2368974C (enExample)
DE (1) DE60011255T2 (enExample)
WO (1) WO2000060324A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2354369A (en) * 1999-09-17 2001-03-21 Secr Defence Noise reduced semiconductor photon detectors
JP2001153720A (ja) * 1999-11-30 2001-06-08 Nec Corp 熱型赤外線検出器
US6649898B1 (en) * 2000-06-30 2003-11-18 Intel Corporation Method and apparatus for optically enabling a circuit component in a large scale integrated circuit
US6378292B1 (en) * 2000-11-10 2002-04-30 Honeywell International Inc. MEMS microthruster array
US6559447B2 (en) 2000-12-26 2003-05-06 Honeywell International Inc. Lightweight infrared camera
US7365326B2 (en) * 2000-12-26 2008-04-29 Honeywell International Inc. Camera having distortion correction
US6541772B2 (en) 2000-12-26 2003-04-01 Honeywell International Inc. Microbolometer operating system
US6919730B2 (en) * 2002-03-18 2005-07-19 Honeywell International, Inc. Carbon nanotube sensor
US7955483B2 (en) * 2002-03-18 2011-06-07 Honeywell International Inc. Carbon nanotube-based glucose sensor
JP3862080B2 (ja) * 2002-11-01 2006-12-27 防衛庁技術研究本部長 熱型赤外線検出器の製造方法
US6891161B2 (en) * 2003-01-17 2005-05-10 Drs Sensors & Targeting Systems, Inc. Pixel structure and an associated method of fabricating the same
DE60308811T2 (de) * 2003-03-24 2007-08-16 Ihi Aerospace Co., Ltd. Thermischer Infrarotdetektor mit erhöhtem Füllfaktor, Methode zu dessen Herstellung und Matrix von thermischen Infrarotdetektoren
US7170059B2 (en) * 2003-10-03 2007-01-30 Wood Roland A Planar thermal array
WO2007021030A1 (en) * 2005-08-17 2007-02-22 Matsushita Electric Works, Ltd. Infrared sensor unit and process of fabricating the same
FR2930639B1 (fr) * 2008-04-29 2011-07-01 Ulis Detecteur thermique a haute isolation
JP5625232B2 (ja) * 2008-10-23 2014-11-19 日本電気株式会社 熱型赤外線固体撮像素子
US9250135B2 (en) 2011-03-16 2016-02-02 Honeywell International Inc. MWIR sensor for flame detection
EP2769407B1 (en) 2011-10-21 2017-05-10 Santa Barbara Infrared Inc. Techniques for tiling arrays of pixel elements
US9748214B2 (en) 2011-10-21 2017-08-29 Santa Barbara Infrared, Inc. Techniques for tiling arrays of pixel elements and fabricating hybridized tiles
RU2498103C1 (ru) * 2012-07-10 2013-11-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) Микроэлектромеханический ракетный двигатель
WO2016004408A2 (en) * 2014-07-03 2016-01-07 Flir Systems, Inc. Vertical microbolometer contact systems and methods
US10397947B2 (en) 2016-08-12 2019-08-27 Qualcomm Incorporated Adaptive waveform selection in wireless communications
EP3938746A2 (en) 2019-03-11 2022-01-19 Flir Commercial Systems, Inc. Microbolometer systems and methods

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220188A (en) * 1983-07-06 1993-06-15 Honeywell Inc. Integrated micromechanical sensor element
US5286976A (en) * 1988-11-07 1994-02-15 Honeywell Inc. Microstructure design for high IR sensitivity
WO1991016607A1 (en) * 1990-04-26 1991-10-31 Commonwealth Of Australia, The Secretary Department Of Defence Semiconductor film bolometer thermal infrared detector
US5288649A (en) * 1991-09-30 1994-02-22 Texas Instruments Incorporated Method for forming uncooled infrared detector
CA2117476C (en) * 1992-06-19 2000-02-22 R. Andrew Wood Infrared camera with thermoelectric temperature stabilization
JPH07190854A (ja) * 1993-12-25 1995-07-28 Nippondenso Co Ltd 赤外線センサ
JP2710228B2 (ja) * 1994-08-11 1998-02-10 日本電気株式会社 ボロメータ型赤外線検知素子、その駆動方法、および検出用積分回路
IL115332A0 (en) * 1994-09-30 1995-12-31 Honeywell Inc Compact thermal camera
US5600148A (en) * 1994-12-30 1997-02-04 Honeywell Inc. Low power infrared scene projector array and method of manufacture
US5821598A (en) * 1995-02-01 1998-10-13 Research Corporation Technologies, Inc. Uncooled amorphous YBaCuO thin film infrared detector
JP3811964B2 (ja) * 1995-02-16 2006-08-23 三菱電機株式会社 赤外線検出装置とその製造方法
FR2752299B1 (fr) * 1996-08-08 1998-09-11 Commissariat Energie Atomique Detecteur infrarouge et procede de fabication de celui-ci
JPH10122950A (ja) * 1996-10-23 1998-05-15 Tech Res & Dev Inst Of Japan Def Agency 熱型赤外線検出器及びその製造方法
US5929441A (en) * 1997-06-27 1999-07-27 Texas Instruments Incorporated Low mass optical coating for thin film detectors

Also Published As

Publication number Publication date
WO2000060324A1 (en) 2000-10-12
EP1166065A1 (en) 2002-01-02
JP2002541449A (ja) 2002-12-03
EP1166065B1 (en) 2004-06-02
JP4700196B2 (ja) 2011-06-15
ATE268468T1 (de) 2004-06-15
CA2368974A1 (en) 2000-10-12
DE60011255D1 (de) 2004-07-08
CA2368974C (en) 2009-05-19
US6046485A (en) 2000-04-04

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