JP4700196B2 - 端正な断面を有する大面積低質量のｉｒピクセル - Google Patents

端正な断面を有する大面積低質量のｉｒピクセル Download PDF

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Publication number
JP4700196B2
JP4700196B2 JP2000609770A JP2000609770A JP4700196B2 JP 4700196 B2 JP4700196 B2 JP 4700196B2 JP 2000609770 A JP2000609770 A JP 2000609770A JP 2000609770 A JP2000609770 A JP 2000609770A JP 4700196 B2 JP4700196 B2 JP 4700196B2
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Japan
Prior art keywords
pixel
substrate
microstructure
cross
resistance
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JP2000609770A
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English (en)
Japanese (ja)
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JP2002541449A (ja
JP2002541449A5 (enExample
Inventor
コウル，バーレット・イー
ヒガシ，ロバート・イー
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Honeywell International Inc
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Honeywell International Inc
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Application filed by Honeywell International Inc filed Critical Honeywell International Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/023—Particular leg structure or construction or shape; Nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Outer Garments And Coats (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2000609770A 1999-04-01 2000-03-10 端正な断面を有する大面積低質量のｉｒピクセル Expired - Lifetime JP4700196B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/283,649 1999-04-01
US09/283,649 US6046485A (en) 1999-04-01 1999-04-01 Large area low mass IR pixel having tailored cross section
PCT/US2000/006223 WO2000060324A1 (en) 1999-04-01 2000-03-10 Large area low mass ir pixel having tailored cross section

Publications (3)

Publication Number Publication Date
JP2002541449A JP2002541449A (ja) 2002-12-03
JP2002541449A5 JP2002541449A5 (enExample) 2006-12-14
JP4700196B2 true JP4700196B2 (ja) 2011-06-15

Family

ID=23086997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000609770A Expired - Lifetime JP4700196B2 (ja) 1999-04-01 2000-03-10 端正な断面を有する大面積低質量のｉｒピクセル

Country Status (7)

Country Link
US (1) US6046485A (enExample)
EP (1) EP1166065B1 (enExample)
JP (1) JP4700196B2 (enExample)
AT (1) ATE268468T1 (enExample)
CA (1) CA2368974C (enExample)
DE (1) DE60011255T2 (enExample)
WO (1) WO2000060324A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2354369A (en) * 1999-09-17 2001-03-21 Secr Defence Noise reduced semiconductor photon detectors
JP2001153720A (ja) * 1999-11-30 2001-06-08 Nec Corp 熱型赤外線検出器
US6649898B1 (en) * 2000-06-30 2003-11-18 Intel Corporation Method and apparatus for optically enabling a circuit component in a large scale integrated circuit
US6378292B1 (en) * 2000-11-10 2002-04-30 Honeywell International Inc. MEMS microthruster array
US6559447B2 (en) 2000-12-26 2003-05-06 Honeywell International Inc. Lightweight infrared camera
US7365326B2 (en) * 2000-12-26 2008-04-29 Honeywell International Inc. Camera having distortion correction
US6541772B2 (en) 2000-12-26 2003-04-01 Honeywell International Inc. Microbolometer operating system
US6919730B2 (en) * 2002-03-18 2005-07-19 Honeywell International, Inc. Carbon nanotube sensor
US7955483B2 (en) * 2002-03-18 2011-06-07 Honeywell International Inc. Carbon nanotube-based glucose sensor
JP3862080B2 (ja) * 2002-11-01 2006-12-27 防衛庁技術研究本部長 熱型赤外線検出器の製造方法
US6891161B2 (en) * 2003-01-17 2005-05-10 Drs Sensors & Targeting Systems, Inc. Pixel structure and an associated method of fabricating the same
DE60308811T2 (de) * 2003-03-24 2007-08-16 Ihi Aerospace Co., Ltd. Thermischer Infrarotdetektor mit erhöhtem Füllfaktor, Methode zu dessen Herstellung und Matrix von thermischen Infrarotdetektoren
US7170059B2 (en) * 2003-10-03 2007-01-30 Wood Roland A Planar thermal array
WO2007021030A1 (en) * 2005-08-17 2007-02-22 Matsushita Electric Works, Ltd. Infrared sensor unit and process of fabricating the same
FR2930639B1 (fr) * 2008-04-29 2011-07-01 Ulis Detecteur thermique a haute isolation
JP5625232B2 (ja) * 2008-10-23 2014-11-19 日本電気株式会社 熱型赤外線固体撮像素子
US9250135B2 (en) 2011-03-16 2016-02-02 Honeywell International Inc. MWIR sensor for flame detection
EP2769407B1 (en) 2011-10-21 2017-05-10 Santa Barbara Infrared Inc. Techniques for tiling arrays of pixel elements
US9748214B2 (en) 2011-10-21 2017-08-29 Santa Barbara Infrared, Inc. Techniques for tiling arrays of pixel elements and fabricating hybridized tiles
RU2498103C1 (ru) * 2012-07-10 2013-11-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) Микроэлектромеханический ракетный двигатель
WO2016004408A2 (en) * 2014-07-03 2016-01-07 Flir Systems, Inc. Vertical microbolometer contact systems and methods
US10397947B2 (en) 2016-08-12 2019-08-27 Qualcomm Incorporated Adaptive waveform selection in wireless communications
EP3938746A2 (en) 2019-03-11 2022-01-19 Flir Commercial Systems, Inc. Microbolometer systems and methods

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220188A (en) * 1983-07-06 1993-06-15 Honeywell Inc. Integrated micromechanical sensor element
US5286976A (en) * 1988-11-07 1994-02-15 Honeywell Inc. Microstructure design for high IR sensitivity
WO1991016607A1 (en) * 1990-04-26 1991-10-31 Commonwealth Of Australia, The Secretary Department Of Defence Semiconductor film bolometer thermal infrared detector
US5288649A (en) * 1991-09-30 1994-02-22 Texas Instruments Incorporated Method for forming uncooled infrared detector
CA2117476C (en) * 1992-06-19 2000-02-22 R. Andrew Wood Infrared camera with thermoelectric temperature stabilization
JPH07190854A (ja) * 1993-12-25 1995-07-28 Nippondenso Co Ltd 赤外線センサ
JP2710228B2 (ja) * 1994-08-11 1998-02-10 日本電気株式会社 ボロメータ型赤外線検知素子、その駆動方法、および検出用積分回路
IL115332A0 (en) * 1994-09-30 1995-12-31 Honeywell Inc Compact thermal camera
US5600148A (en) * 1994-12-30 1997-02-04 Honeywell Inc. Low power infrared scene projector array and method of manufacture
US5821598A (en) * 1995-02-01 1998-10-13 Research Corporation Technologies, Inc. Uncooled amorphous YBaCuO thin film infrared detector
JP3811964B2 (ja) * 1995-02-16 2006-08-23 三菱電機株式会社 赤外線検出装置とその製造方法
FR2752299B1 (fr) * 1996-08-08 1998-09-11 Commissariat Energie Atomique Detecteur infrarouge et procede de fabication de celui-ci
JPH10122950A (ja) * 1996-10-23 1998-05-15 Tech Res & Dev Inst Of Japan Def Agency 熱型赤外線検出器及びその製造方法
US5929441A (en) * 1997-06-27 1999-07-27 Texas Instruments Incorporated Low mass optical coating for thin film detectors

Also Published As

Publication number Publication date
WO2000060324A1 (en) 2000-10-12
EP1166065A1 (en) 2002-01-02
JP2002541449A (ja) 2002-12-03
EP1166065B1 (en) 2004-06-02
ATE268468T1 (de) 2004-06-15
CA2368974A1 (en) 2000-10-12
DE60011255D1 (de) 2004-07-08
CA2368974C (en) 2009-05-19
DE60011255T2 (de) 2005-07-07
US6046485A (en) 2000-04-04

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