DE60009246D1 - Verfahren zur Vorbehandlung für die Plasma-Immersions-Ionenimplantation - Google Patents

Verfahren zur Vorbehandlung für die Plasma-Immersions-Ionenimplantation

Info

Publication number
DE60009246D1
DE60009246D1 DE60009246T DE60009246T DE60009246D1 DE 60009246 D1 DE60009246 D1 DE 60009246D1 DE 60009246 T DE60009246 T DE 60009246T DE 60009246 T DE60009246 T DE 60009246T DE 60009246 D1 DE60009246 D1 DE 60009246D1
Authority
DE
Germany
Prior art keywords
ion implantation
plasma immersion
immersion ion
pretreatment procedure
pretreatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60009246T
Other languages
English (en)
Other versions
DE60009246T2 (de
Inventor
James David Bernstein
Peter Lawrence Kellerman
Stuart A Denholm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Application granted granted Critical
Publication of DE60009246D1 publication Critical patent/DE60009246D1/de
Publication of DE60009246T2 publication Critical patent/DE60009246T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
DE60009246T 1999-12-22 2000-12-19 Verfahren zur Vorbehandlung für die Plasma-Immersions-Ionenimplantation Expired - Fee Related DE60009246T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/469,661 US6458430B1 (en) 1999-12-22 1999-12-22 Pretreatment process for plasma immersion ion implantation
US469661 1999-12-22

Publications (2)

Publication Number Publication Date
DE60009246D1 true DE60009246D1 (de) 2004-04-29
DE60009246T2 DE60009246T2 (de) 2005-02-24

Family

ID=23864621

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60009246T Expired - Fee Related DE60009246T2 (de) 1999-12-22 2000-12-19 Verfahren zur Vorbehandlung für die Plasma-Immersions-Ionenimplantation

Country Status (7)

Country Link
US (1) US6458430B1 (de)
EP (1) EP1111084B1 (de)
JP (1) JP2001267266A (de)
KR (1) KR100559197B1 (de)
DE (1) DE60009246T2 (de)
SG (1) SG93918A1 (de)
TW (1) TWI228543B (de)

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US6841342B2 (en) * 2001-08-08 2005-01-11 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
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US7615473B2 (en) * 2002-01-17 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Method of introducing ion and method of manufacturing semiconductor device
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US7297616B2 (en) * 2003-04-09 2007-11-20 Rohm And Haas Electronic Materials Llc Methods, photoresists and substrates for ion-implant lithography
US7022611B1 (en) 2003-04-28 2006-04-04 Lam Research Corporation Plasma in-situ treatment of chemically amplified resist
US20050019697A1 (en) * 2003-07-24 2005-01-27 Advanced Ion Beam Technology, Inc. Method of treating wafers with photoresist to perform metrology analysis using large current e-beam systems
US7494905B2 (en) * 2003-08-21 2009-02-24 Texas Instruments Incorporated Method for preparing a source material including forming a paste for ion implantation
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US20050250346A1 (en) * 2004-05-06 2005-11-10 Applied Materials, Inc. Process and apparatus for post deposition treatment of low k dielectric materials
US7396746B2 (en) * 2004-05-24 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Methods for stable and repeatable ion implantation
FR2871812B1 (fr) * 2004-06-16 2008-09-05 Ion Beam Services Sa Implanteur ionique fonctionnant en mode plasma pulse
US7741621B2 (en) * 2004-07-14 2010-06-22 City University Of Hong Kong Apparatus and method for focused electric field enhanced plasma-based ion implantation
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US7666464B2 (en) 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
WO2006057818A2 (en) * 2004-11-24 2006-06-01 Nanosys, Inc. Contact doping and annealing systems and processes for nanowire thin films
US7423721B2 (en) * 2004-12-15 2008-09-09 Asml Netherlands B.V. Lithographic apparatus
US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US20060249175A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
DE102006009822B4 (de) 2006-03-01 2013-04-18 Schott Ag Verfahren zur Plasmabehandlung von Glasoberflächen, dessen Verwendung sowie Glassubstrat und dessen Verwendung
US7786024B2 (en) * 2006-11-29 2010-08-31 Nanosys, Inc. Selective processing of semiconductor nanowires by polarized visible radiation
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
EP3188215A3 (de) * 2010-02-09 2017-09-13 Intevac, Inc. Einstellbare lochmaskenanordnung zur verwendung bei der herstellung von solarzellen
CN102376520B (zh) * 2010-08-17 2013-12-25 中国科学院微电子研究所 等离子体浸没注入机的注入离子剂量检测控制装置
CN102376519B (zh) * 2010-08-17 2013-12-25 中国科学院微电子研究所 一种离子注入剂量检测控制方法
US20130045591A1 (en) * 2011-08-15 2013-02-21 Texas Instruments Incorporated Negative tone develop process with photoresist doping
WO2013070978A2 (en) 2011-11-08 2013-05-16 Intevac, Inc. Substrate processing system and method
US9812291B2 (en) * 2012-02-14 2017-11-07 Entegris, Inc. Alternate materials and mixtures to minimize phosphorus buildup in implant applications
WO2014100506A1 (en) 2012-12-19 2014-06-26 Intevac, Inc. Grid for plasma ion implant
EP2819162B1 (de) * 2013-06-24 2020-06-17 IMEC vzw Verfahren zur Herstellung von Kontaktbereichen auf einem Halbleitersubstrat
US9754791B2 (en) * 2015-02-07 2017-09-05 Applied Materials, Inc. Selective deposition utilizing masks and directional plasma treatment
US10553411B2 (en) 2015-09-10 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Ion collector for use in plasma systems
US10799587B2 (en) * 2016-05-11 2020-10-13 Huan NIU Ion implantation of neutron capture elements into nanodiamond particles to form composition for neutron capture therapy usage
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Also Published As

Publication number Publication date
DE60009246T2 (de) 2005-02-24
JP2001267266A (ja) 2001-09-28
KR20010062546A (ko) 2001-07-07
KR100559197B1 (ko) 2006-03-10
SG93918A1 (en) 2003-01-21
EP1111084A1 (de) 2001-06-27
EP1111084B1 (de) 2004-03-24
US6458430B1 (en) 2002-10-01
TWI228543B (en) 2005-03-01

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