DE60001680D1 - Ein strahlungsempfindliches Resistmaterial und ein dieses Resistmaterial verwendendes Verfahren zur Herstellung einer Vorrichtung - Google Patents
Ein strahlungsempfindliches Resistmaterial und ein dieses Resistmaterial verwendendes Verfahren zur Herstellung einer VorrichtungInfo
- Publication number
- DE60001680D1 DE60001680D1 DE60001680T DE60001680T DE60001680D1 DE 60001680 D1 DE60001680 D1 DE 60001680D1 DE 60001680 T DE60001680 T DE 60001680T DE 60001680 T DE60001680 T DE 60001680T DE 60001680 D1 DE60001680 D1 DE 60001680D1
- Authority
- DE
- Germany
- Prior art keywords
- resist material
- manufacturing
- radiation sensitive
- sensitive resist
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/268,448 US6296984B1 (en) | 1999-03-12 | 1999-03-12 | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
US268448 | 1999-03-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60001680D1 true DE60001680D1 (de) | 2003-04-24 |
DE60001680T2 DE60001680T2 (de) | 2004-08-05 |
Family
ID=23023050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60001680T Expired - Lifetime DE60001680T2 (de) | 1999-03-12 | 2000-02-28 | Ein strahlungsempfindliches Resistmaterial und ein dieses Resistmaterial verwendendes Verfahren zur Herstellung einer Vorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US6296984B1 (de) |
EP (1) | EP1035437B1 (de) |
JP (1) | JP3631654B2 (de) |
KR (1) | KR100388396B1 (de) |
DE (1) | DE60001680T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001055789A2 (en) * | 2000-01-25 | 2001-08-02 | Infineon Technologies Ag | Chemically amplified short wavelength resist |
US6686132B2 (en) * | 2001-04-20 | 2004-02-03 | The Regents Of The University Of California | Method and apparatus for enhancing resist sensitivity and resolution by application of an alternating electric field during post-exposure bake |
SG113448A1 (en) * | 2002-02-25 | 2005-08-29 | Semiconductor Energy Lab | Fabrication system and a fabrication method of a light emitting device |
DE10208785B4 (de) * | 2002-02-28 | 2008-01-31 | Qimonda Ag | Lithografieverfahren zur Fotomaskenherstellung mittels Elektronenstrahllithografie |
US6858378B1 (en) * | 2002-04-17 | 2005-02-22 | Sandia National Laboratories | Photoimageable composition |
US8564780B2 (en) * | 2003-01-16 | 2013-10-22 | Jordan Valley Semiconductors Ltd. | Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces |
DE10350686A1 (de) * | 2003-10-30 | 2005-06-16 | Infineon Technologies Ag | Vorrichtung und Verfahren zum Nachweis von Ausgasprodukten |
JP5525777B2 (ja) * | 2009-07-31 | 2014-06-18 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物及びこれを用いたパターン形成方法 |
US9599896B2 (en) * | 2014-03-14 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
US9983474B2 (en) * | 2015-09-11 | 2018-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist having sensitizer bonded to acid generator |
EP3769156B1 (de) | 2018-03-23 | 2024-03-20 | Merck Patent GmbH | Negativ wirkender fotolack mit ultradicker schicht |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2198736A (en) * | 1937-02-12 | 1940-04-30 | Ferranti Electric Inc | Voltage regulating relay |
US4279986A (en) * | 1977-06-01 | 1981-07-21 | Nippon Electric Co., Ltd. | Negative resist and radical scavenger composition with capability of preventing post-irradiation polymerization |
DE3641014A1 (de) | 1986-12-19 | 1988-06-16 | Wolfen Filmfab Veb | Fotopolymerisierbares material |
JPH06222554A (ja) | 1993-01-21 | 1994-08-12 | Konica Corp | 感光性平版印刷版 |
JPH086253A (ja) * | 1994-06-17 | 1996-01-12 | Sony Corp | 感光性組成物 |
JPH086256A (ja) * | 1994-06-24 | 1996-01-12 | Mitsubishi Electric Corp | レジストパターンの形成方法および該方法に用いられる酸性の水溶性材料組成物 |
US5609989A (en) * | 1995-06-06 | 1997-03-11 | International Business Machines, Corporation | Acid scavengers for use in chemically amplified photoresists |
US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
JP3587325B2 (ja) * | 1996-03-08 | 2004-11-10 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
US5912106A (en) | 1996-09-10 | 1999-06-15 | Ciba Specialty Chemicals Corporation | Method for improving photoimage quality |
US5972571A (en) * | 1997-12-02 | 1999-10-26 | International Business Machines Corporation | Negative resist composition and use thereof |
-
1999
- 1999-03-12 US US09/268,448 patent/US6296984B1/en not_active Expired - Lifetime
-
2000
- 2000-02-28 DE DE60001680T patent/DE60001680T2/de not_active Expired - Lifetime
- 2000-02-28 EP EP00301532A patent/EP1035437B1/de not_active Expired - Lifetime
- 2000-03-10 JP JP2000065873A patent/JP3631654B2/ja not_active Expired - Fee Related
- 2000-03-10 KR KR10-2000-0012003A patent/KR100388396B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP1035437A2 (de) | 2000-09-13 |
JP2000305272A (ja) | 2000-11-02 |
EP1035437B1 (de) | 2002-03-27 |
DE60001680T2 (de) | 2004-08-05 |
KR20000076812A (ko) | 2000-12-26 |
KR100388396B1 (ko) | 2003-06-25 |
EP1035437A3 (de) | 2000-09-20 |
JP3631654B2 (ja) | 2005-03-23 |
US6296984B1 (en) | 2001-10-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de | ||
8370 | Indication related to discontinuation of the patent is to be deleted |