DE60001680D1 - Ein strahlungsempfindliches Resistmaterial und ein dieses Resistmaterial verwendendes Verfahren zur Herstellung einer Vorrichtung - Google Patents

Ein strahlungsempfindliches Resistmaterial und ein dieses Resistmaterial verwendendes Verfahren zur Herstellung einer Vorrichtung

Info

Publication number
DE60001680D1
DE60001680D1 DE60001680T DE60001680T DE60001680D1 DE 60001680 D1 DE60001680 D1 DE 60001680D1 DE 60001680 T DE60001680 T DE 60001680T DE 60001680 T DE60001680 T DE 60001680T DE 60001680 D1 DE60001680 D1 DE 60001680D1
Authority
DE
Germany
Prior art keywords
resist material
manufacturing
radiation sensitive
sensitive resist
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60001680T
Other languages
English (en)
Other versions
DE60001680T2 (de
Inventor
Allen H Gabor
Francis Michael Houlihan
Omkaram Nalamasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arch Specialty Chemicals Inc
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Arch Specialty Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc, Arch Specialty Chemicals Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of DE60001680D1 publication Critical patent/DE60001680D1/de
Publication of DE60001680T2 publication Critical patent/DE60001680T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/115Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE60001680T 1999-03-12 2000-02-28 Ein strahlungsempfindliches Resistmaterial und ein dieses Resistmaterial verwendendes Verfahren zur Herstellung einer Vorrichtung Expired - Lifetime DE60001680T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/268,448 US6296984B1 (en) 1999-03-12 1999-03-12 Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US268448 1999-03-12

Publications (2)

Publication Number Publication Date
DE60001680D1 true DE60001680D1 (de) 2003-04-24
DE60001680T2 DE60001680T2 (de) 2004-08-05

Family

ID=23023050

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60001680T Expired - Lifetime DE60001680T2 (de) 1999-03-12 2000-02-28 Ein strahlungsempfindliches Resistmaterial und ein dieses Resistmaterial verwendendes Verfahren zur Herstellung einer Vorrichtung

Country Status (5)

Country Link
US (1) US6296984B1 (de)
EP (1) EP1035437B1 (de)
JP (1) JP3631654B2 (de)
KR (1) KR100388396B1 (de)
DE (1) DE60001680T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001055789A2 (en) * 2000-01-25 2001-08-02 Infineon Technologies Ag Chemically amplified short wavelength resist
US6686132B2 (en) * 2001-04-20 2004-02-03 The Regents Of The University Of California Method and apparatus for enhancing resist sensitivity and resolution by application of an alternating electric field during post-exposure bake
SG113448A1 (en) * 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
DE10208785B4 (de) * 2002-02-28 2008-01-31 Qimonda Ag Lithografieverfahren zur Fotomaskenherstellung mittels Elektronenstrahllithografie
US6858378B1 (en) * 2002-04-17 2005-02-22 Sandia National Laboratories Photoimageable composition
US8564780B2 (en) * 2003-01-16 2013-10-22 Jordan Valley Semiconductors Ltd. Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces
DE10350686A1 (de) * 2003-10-30 2005-06-16 Infineon Technologies Ag Vorrichtung und Verfahren zum Nachweis von Ausgasprodukten
JP5525777B2 (ja) * 2009-07-31 2014-06-18 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物及びこれを用いたパターン形成方法
US9599896B2 (en) * 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9983474B2 (en) * 2015-09-11 2018-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist having sensitizer bonded to acid generator
EP3769156B1 (de) 2018-03-23 2024-03-20 Merck Patent GmbH Negativ wirkender fotolack mit ultradicker schicht

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2198736A (en) * 1937-02-12 1940-04-30 Ferranti Electric Inc Voltage regulating relay
US4279986A (en) * 1977-06-01 1981-07-21 Nippon Electric Co., Ltd. Negative resist and radical scavenger composition with capability of preventing post-irradiation polymerization
DE3641014A1 (de) 1986-12-19 1988-06-16 Wolfen Filmfab Veb Fotopolymerisierbares material
JPH06222554A (ja) 1993-01-21 1994-08-12 Konica Corp 感光性平版印刷版
JPH086253A (ja) * 1994-06-17 1996-01-12 Sony Corp 感光性組成物
JPH086256A (ja) * 1994-06-24 1996-01-12 Mitsubishi Electric Corp レジストパターンの形成方法および該方法に用いられる酸性の水溶性材料組成物
US5609989A (en) * 1995-06-06 1997-03-11 International Business Machines, Corporation Acid scavengers for use in chemically amplified photoresists
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP3587325B2 (ja) * 1996-03-08 2004-11-10 富士写真フイルム株式会社 ポジ型感光性組成物
US5912106A (en) 1996-09-10 1999-06-15 Ciba Specialty Chemicals Corporation Method for improving photoimage quality
US5972571A (en) * 1997-12-02 1999-10-26 International Business Machines Corporation Negative resist composition and use thereof

Also Published As

Publication number Publication date
EP1035437A2 (de) 2000-09-13
JP2000305272A (ja) 2000-11-02
EP1035437B1 (de) 2002-03-27
DE60001680T2 (de) 2004-08-05
KR20000076812A (ko) 2000-12-26
KR100388396B1 (ko) 2003-06-25
EP1035437A3 (de) 2000-09-20
JP3631654B2 (ja) 2005-03-23
US6296984B1 (en) 2001-10-02

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted