DE59813144D1 - Teilchenmanipulierung - Google Patents

Teilchenmanipulierung

Info

Publication number
DE59813144D1
DE59813144D1 DE59813144T DE59813144T DE59813144D1 DE 59813144 D1 DE59813144 D1 DE 59813144D1 DE 59813144 T DE59813144 T DE 59813144T DE 59813144 T DE59813144 T DE 59813144T DE 59813144 D1 DE59813144 D1 DE 59813144D1
Authority
DE
Germany
Prior art keywords
particle manipulation
manipulation
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE59813144T
Other languages
English (en)
Inventor
Gregor Morfill
Hubertus Thomas
Timo Stuffler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Kayser Threde GmbH
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Kayser Threde GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV, Kayser Threde GmbH filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority to DE59813144T priority Critical patent/DE59813144D1/de
Application granted granted Critical
Publication of DE59813144D1 publication Critical patent/DE59813144D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H3/00Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
    • H05H3/04Acceleration by electromagnetic wave pressure
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/773Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/84Manufacture, treatment, or detection of nanostructure

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
DE59813144T 1997-04-02 1998-04-02 Teilchenmanipulierung Expired - Fee Related DE59813144D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE59813144T DE59813144D1 (de) 1997-04-02 1998-04-02 Teilchenmanipulierung

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19713637A DE19713637C2 (de) 1997-04-02 1997-04-02 Teilchenmanipulierung
DE59813144T DE59813144D1 (de) 1997-04-02 1998-04-02 Teilchenmanipulierung
PCT/EP1998/001938 WO1998044766A2 (de) 1997-04-02 1998-04-02 Teilchenmanipulierung

Publications (1)

Publication Number Publication Date
DE59813144D1 true DE59813144D1 (de) 2005-12-01

Family

ID=7825258

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19713637A Expired - Fee Related DE19713637C2 (de) 1997-04-02 1997-04-02 Teilchenmanipulierung
DE59813144T Expired - Fee Related DE59813144D1 (de) 1997-04-02 1998-04-02 Teilchenmanipulierung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19713637A Expired - Fee Related DE19713637C2 (de) 1997-04-02 1997-04-02 Teilchenmanipulierung

Country Status (5)

Country Link
US (1) US6517912B1 (de)
EP (1) EP0972431B1 (de)
JP (1) JP2001518230A (de)
DE (2) DE19713637C2 (de)
WO (1) WO1998044766A2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19814871A1 (de) * 1998-04-02 1999-10-07 Max Planck Gesellschaft Verfahren und Vorrichtung zur gezielten Teilchenmanipulierung und -deposition
DE19926494C2 (de) * 1999-06-10 2001-07-26 Max Planck Gesellschaft Verfahren und Vorrichtung zur Abbildung von mikroskopisch kleinen Teilchen
JP2006318702A (ja) * 2005-05-11 2006-11-24 Mitsubishi Electric Corp 電子放出源の製造方法
US9246298B2 (en) * 2012-06-07 2016-01-26 Cymer, Llc Corrosion resistant electrodes for laser chambers
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
PL3648550T3 (pl) 2017-06-27 2021-11-22 Canon Anelva Corporation Urządzenie do przetwarzania plazmowego
CN114666965A (zh) 2017-06-27 2022-06-24 佳能安内华股份有限公司 等离子体处理装置
WO2019004189A1 (ja) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
PL3648554T3 (pl) 2017-06-27 2021-11-22 Canon Anelva Corporation Urządzenie do przetwarzania plazmowego
EP3648552B1 (de) 2017-06-27 2022-04-13 Canon Anelva Corporation Plasmabehandlungsvorrichtung
WO2020003557A1 (ja) 2018-06-26 2020-01-02 キヤノンアネルバ株式会社 プラズマ処理装置、プラズマ処理方法、プログラムおよびメモリ媒体

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108543A (en) 1984-11-07 1992-04-28 Hitachi, Ltd. Method of surface treatment
JPS61158877A (ja) 1984-12-27 1986-07-18 小宮山 宏 セラミツクス多孔質膜の製造方法
DE3729347A1 (de) 1986-09-05 1988-03-17 Mitsubishi Electric Corp Plasmaprozessor
US4740267A (en) 1987-02-20 1988-04-26 Hughes Aircraft Company Energy intensive surface reactions using a cluster beam
JP2906057B2 (ja) * 1987-08-13 1999-06-14 セイコーエプソン株式会社 液晶表示装置
JP2549433B2 (ja) 1989-03-13 1996-10-30 株式会社日立製作所 電気光学変調素子の駆動方法およびプリンタ
DE4018954A1 (de) 1989-06-15 1991-01-03 Mitsubishi Electric Corp Trockenaetzgeraet
US5102496A (en) * 1989-09-26 1992-04-07 Applied Materials, Inc. Particulate contamination prevention using low power plasma
DE4118072C2 (de) 1991-06-01 1997-08-07 Linde Ag Verfahren zur Stoßwellenbeschichtung von Substraten
JP3137682B2 (ja) * 1991-08-12 2001-02-26 株式会社日立製作所 半導体装置の製造方法
US5332441A (en) * 1991-10-31 1994-07-26 International Business Machines Corporation Apparatus for gettering of particles during plasma processing
CH687987A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer.
DE69420774T2 (de) * 1993-05-13 2000-01-13 Applied Materials Inc Kontrolle der Kontamination in einem Plasma durch Ausgestaltung des Plasmaschildes unter Verwendung von Materialien mit verschiedenen RF-Impedanzen
DE4316349C2 (de) * 1993-05-15 1996-09-05 Ver Foerderung Inst Kunststoff Verfahren zur Innenbeschichtung von Hohlkörpern mit organischen Deckschichten durch Plasmapolymerisation, sowie Vorrichtung zur Durchführung des Verfahrens
US5456796A (en) * 1993-06-02 1995-10-10 Applied Materials, Inc. Control of particle generation within a reaction chamber
KR100333237B1 (ko) * 1993-10-29 2002-09-12 어플라이드 머티어리얼스, 인코포레이티드 플라즈마에칭챔버내에서오염물질을감소시키는장치및방법
US5518547A (en) * 1993-12-23 1996-05-21 International Business Machines Corporation Method and apparatus for reducing particulates in a plasma tool through steady state flows
JPH07226395A (ja) 1994-02-15 1995-08-22 Matsushita Electric Ind Co Ltd 真空プラズマ処理装置
US5573597A (en) * 1995-06-07 1996-11-12 Sony Corporation Plasma processing system with reduced particle contamination
US5637190A (en) * 1995-09-15 1997-06-10 Vanguard International Semiconductor Corporation Plasma purge method for plasma process particle control
DE19538045C1 (de) * 1995-10-13 1997-01-30 Forschungszentrum Juelich Gmbh Vorrichtung zur Beschichtung von Substraten
US5746928A (en) * 1996-06-03 1998-05-05 Taiwan Semiconductor Manufacturing Company Ltd Process for cleaning an electrostatic chuck of a plasma etching apparatus
US5854138A (en) * 1997-07-29 1998-12-29 Cypress Semiconductor Corp. Reduced-particle method of processing a semiconductor and/or integrated circuit

Also Published As

Publication number Publication date
EP0972431B1 (de) 2005-10-26
EP0972431A2 (de) 2000-01-19
JP2001518230A (ja) 2001-10-09
WO1998044766A2 (de) 1998-10-08
DE19713637C2 (de) 1999-02-18
WO1998044766A3 (de) 1999-01-07
DE19713637A1 (de) 1998-10-22
US6517912B1 (en) 2003-02-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee