DE4341667C1 - Integrierte Schaltungsanordnung mit mindestens einem CMOS-NAND-Gatter und Verfahren zu deren Herstellung - Google Patents

Integrierte Schaltungsanordnung mit mindestens einem CMOS-NAND-Gatter und Verfahren zu deren Herstellung

Info

Publication number
DE4341667C1
DE4341667C1 DE4341667A DE4341667A DE4341667C1 DE 4341667 C1 DE4341667 C1 DE 4341667C1 DE 4341667 A DE4341667 A DE 4341667A DE 4341667 A DE4341667 A DE 4341667A DE 4341667 C1 DE4341667 C1 DE 4341667C1
Authority
DE
Germany
Prior art keywords
layer
opening
conductive structure
doped
extends
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4341667A
Other languages
German (de)
English (en)
Inventor
Lothar Dr Risch
Thomas Dipl Phys Vogelsang
Franz Dr Hofmann
Karl Prof Dr Hofmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to DE4341667A priority Critical patent/DE4341667C1/de
Priority to TW083109591A priority patent/TW304286B/zh
Priority to US08/332,737 priority patent/US5559353A/en
Priority to EP94118235A priority patent/EP0657930A3/de
Priority to JP6321724A priority patent/JPH07235605A/ja
Application granted granted Critical
Publication of DE4341667C1 publication Critical patent/DE4341667C1/de
Priority to KR1019940033064A priority patent/KR950021540A/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/018—Manufacture or treatment of isolation regions comprising dielectric materials using selective deposition of crystalline silicon, e.g. using epitaxial growth of silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE4341667A 1993-12-07 1993-12-07 Integrierte Schaltungsanordnung mit mindestens einem CMOS-NAND-Gatter und Verfahren zu deren Herstellung Expired - Fee Related DE4341667C1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE4341667A DE4341667C1 (de) 1993-12-07 1993-12-07 Integrierte Schaltungsanordnung mit mindestens einem CMOS-NAND-Gatter und Verfahren zu deren Herstellung
TW083109591A TW304286B (https=) 1993-12-07 1994-10-15
US08/332,737 US5559353A (en) 1993-12-07 1994-11-01 Integrated circuit structure having at least one CMOS-NAND gate and method for the manufacture thereof
EP94118235A EP0657930A3 (de) 1993-12-07 1994-11-18 Integrierte Schaltungsstruktur mit mindestens einem CMOS-NAND-Gatter und Verfahren zu deren Herstellung
JP6321724A JPH07235605A (ja) 1993-12-07 1994-11-30 少なくとも１個のｃｍｏｓ−ｎａｎｄゲートを有する集積回路構造及びその製造方法
KR1019940033064A KR950021540A (ko) 1993-12-07 1994-12-07 적어도 하나의 시모스-낸드 게이트를 가진 집적회로 및 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4341667A DE4341667C1 (de) 1993-12-07 1993-12-07 Integrierte Schaltungsanordnung mit mindestens einem CMOS-NAND-Gatter und Verfahren zu deren Herstellung

Publications (1)

Publication Number Publication Date
DE4341667C1 true DE4341667C1 (de) 1994-12-01

Family

ID=6504379

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4341667A Expired - Fee Related DE4341667C1 (de) 1993-12-07 1993-12-07 Integrierte Schaltungsanordnung mit mindestens einem CMOS-NAND-Gatter und Verfahren zu deren Herstellung

Country Status (6)

Country Link
US (1) US5559353A (https=)
EP (1) EP0657930A3 (https=)
JP (1) JPH07235605A (https=)
KR (1) KR950021540A (https=)
DE (1) DE4341667C1 (https=)
TW (1) TW304286B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060911A (en) * 1997-08-22 2000-05-09 Siemens Aktiengesellschaft Circuit arrangement with at least four transistors, and method for the manufacture thereof

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19611045C1 (de) * 1996-03-20 1997-05-22 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
US5795807A (en) * 1996-12-20 1998-08-18 Advanced Micro Devices Semiconductor device having a group of high performance transistors and method of manufacture thereof
DE19801095B4 (de) * 1998-01-14 2007-12-13 Infineon Technologies Ag Leistungs-MOSFET
DE19840032C1 (de) 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
WO2000019529A1 (de) * 1998-09-25 2000-04-06 Infineon Technologies Ag Integrierte schaltungsanordnung mit vertikaltransistoren und verfahren zu deren herstellung
EP1118116B1 (de) * 1998-09-30 2007-01-03 Infineon Technologies AG Substrat mit einer vertiefung, das für eine integrierte schaltungsanordnung geeignet ist, und verfahren zu dessen herstellung
FR2789227B1 (fr) * 1999-02-03 2003-08-15 France Telecom DISPOSITIF SEMI-CONDUCTEUR DE PORTES LOGIQUES NON-ET OU NON-OU A n ENTREES, ET PROCEDE DE FABRICATION CORRESPONDANT
JP2001111538A (ja) * 1999-10-05 2001-04-20 Dainippon Printing Co Ltd 通信システムとその方法、通信装置およびｉｃカード
US6825514B2 (en) * 2001-11-09 2004-11-30 Infineon Technologies Ag High-voltage semiconductor component
US6819089B2 (en) 2001-11-09 2004-11-16 Infineon Technologies Ag Power factor correction circuit with high-voltage semiconductor component

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
US4788158A (en) * 1985-09-25 1988-11-29 Texas Instruments Incorporated Method of making vertical inverter

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4810906A (en) * 1985-09-25 1989-03-07 Texas Instruments Inc. Vertical inverter circuit
US4951102A (en) * 1988-08-24 1990-08-21 Harris Corporation Trench gate VCMOS
JPH0828120B2 (ja) * 1990-05-23 1996-03-21 株式会社東芝 アドレスデコード回路
MY107475A (en) * 1990-05-31 1995-12-30 Canon Kk Semiconductor device and method for producing the same.
JP2991489B2 (ja) * 1990-11-30 1999-12-20 株式会社東芝 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
US4788158A (en) * 1985-09-25 1988-11-29 Texas Instruments Incorporated Method of making vertical inverter

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Electronics, 3. Mai 1984, S. 129-133 *
IEEE Journal of Solid-State Circuits, Bd. 37, Nr. 7, 1992, S. 1067-1071 *
W. Kiunke, Dissertation, Universität der Bundeswehr, Fakultät für Elektrotechnik, Inst. für Physik *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060911A (en) * 1997-08-22 2000-05-09 Siemens Aktiengesellschaft Circuit arrangement with at least four transistors, and method for the manufacture thereof

Also Published As

Publication number Publication date
EP0657930A2 (de) 1995-06-14
US5559353A (en) 1996-09-24
KR950021540A (ko) 1995-07-26
JPH07235605A (ja) 1995-09-05
TW304286B (https=) 1997-05-01
EP0657930A3 (de) 1998-01-07

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Legal Events

Date Code Title Description
8100 Publication of patent without earlier publication of application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee