DE4219031C2 - Multi-Chip-Modul mit Kondensator, der auf dem Träger aus Silizium (monokristalines Substrat) realisiert ist - Google Patents

Multi-Chip-Modul mit Kondensator, der auf dem Träger aus Silizium (monokristalines Substrat) realisiert ist

Info

Publication number
DE4219031C2
DE4219031C2 DE4219031A DE4219031A DE4219031C2 DE 4219031 C2 DE4219031 C2 DE 4219031C2 DE 4219031 A DE4219031 A DE 4219031A DE 4219031 A DE4219031 A DE 4219031A DE 4219031 C2 DE4219031 C2 DE 4219031C2
Authority
DE
Germany
Prior art keywords
carrier
capacitor
chip module
realized
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4219031A
Other languages
German (de)
English (en)
Other versions
DE4219031A1 (de
Inventor
Wolfgang Dr Hoenlein
Volker Dr Lehmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to DE4219031A priority Critical patent/DE4219031C2/de
Priority to US08/064,235 priority patent/US5365405A/en
Priority to EP93108381A priority patent/EP0573838B1/de
Priority to DE59305563T priority patent/DE59305563D1/de
Priority to JP5160302A priority patent/JPH0669416A/ja
Publication of DE4219031A1 publication Critical patent/DE4219031A1/de
Application granted granted Critical
Publication of DE4219031C2 publication Critical patent/DE4219031C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/601—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
    • H10W70/26—Semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Semiconductor Integrated Circuits (AREA)
DE4219031A 1992-06-10 1992-06-10 Multi-Chip-Modul mit Kondensator, der auf dem Träger aus Silizium (monokristalines Substrat) realisiert ist Expired - Fee Related DE4219031C2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE4219031A DE4219031C2 (de) 1992-06-10 1992-06-10 Multi-Chip-Modul mit Kondensator, der auf dem Träger aus Silizium (monokristalines Substrat) realisiert ist
US08/064,235 US5365405A (en) 1992-06-10 1993-05-21 Multi-chip module
EP93108381A EP0573838B1 (de) 1992-06-10 1993-05-24 Mehrchipmodul
DE59305563T DE59305563D1 (de) 1992-06-10 1993-05-24 Mehrchipmodul
JP5160302A JPH0669416A (ja) 1992-06-10 1993-06-04 マルチチップモジュール

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4219031A DE4219031C2 (de) 1992-06-10 1992-06-10 Multi-Chip-Modul mit Kondensator, der auf dem Träger aus Silizium (monokristalines Substrat) realisiert ist

Publications (2)

Publication Number Publication Date
DE4219031A1 DE4219031A1 (de) 1993-12-16
DE4219031C2 true DE4219031C2 (de) 1994-11-10

Family

ID=6460735

Family Applications (2)

Application Number Title Priority Date Filing Date
DE4219031A Expired - Fee Related DE4219031C2 (de) 1992-06-10 1992-06-10 Multi-Chip-Modul mit Kondensator, der auf dem Träger aus Silizium (monokristalines Substrat) realisiert ist
DE59305563T Expired - Fee Related DE59305563D1 (de) 1992-06-10 1993-05-24 Mehrchipmodul

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE59305563T Expired - Fee Related DE59305563D1 (de) 1992-06-10 1993-05-24 Mehrchipmodul

Country Status (4)

Country Link
US (1) US5365405A (OSRAM)
EP (1) EP0573838B1 (OSRAM)
JP (1) JPH0669416A (OSRAM)
DE (2) DE4219031C2 (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4429289A1 (de) * 1994-08-18 1996-02-22 Telefunken Microelectron Integrierte Schaltungsanordnung
DE102008035993A1 (de) * 2008-08-01 2010-02-18 Infineon Technologies Ag Leistungshalbleitermodul

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0645621A3 (de) * 1993-09-28 1995-11-08 Siemens Ag Sensoranordnung.
GB9414362D0 (en) * 1994-07-15 1994-09-07 Plessey Semiconductors Ltd Trimmable capacitor
US5534465A (en) * 1995-01-10 1996-07-09 At&T Corp. Method for making multichip circuits using active semiconductor substrates
US6462976B1 (en) 1997-02-21 2002-10-08 University Of Arkansas Conversion of electrical energy from one form to another, and its management through multichip module structures
DE19708970B4 (de) * 1997-03-05 2009-09-24 Reinz-Dichtungs-Gmbh Metallische Flachdichtung
US7144486B1 (en) 1997-04-30 2006-12-05 Board Of Trustees Of The University Of Arkansas Multilayer microcavity devices and methods
US7169272B2 (en) * 1997-04-30 2007-01-30 Board Of Trustees Of The University Of Arkansas Microfabricated recessed disk microelectrodes: characterization in static and convective solutions
DE19928733A1 (de) 1999-06-23 2001-01-04 Giesecke & Devrient Gmbh Halbleiterspeicher-Chipmodul
DE19943251A1 (de) * 1999-09-10 2001-04-05 Bosch Gmbh Robert Kondensatorbauelement
US6887714B2 (en) 2000-10-16 2005-05-03 Board Of Trustees Of The University Of Arkansas, N.A. Microvolume immunoabsorbant assays with amplified electrochemical detection
US7456028B2 (en) 2000-10-16 2008-11-25 Board Of Trustees Of The University Of Arkansas, N.A. Electrochemical method for detecting water born pathogens
US7348183B2 (en) * 2000-10-16 2008-03-25 Board Of Trustees Of The University Of Arkansas Self-contained microelectrochemical bioassay platforms and methods
JP2002299462A (ja) * 2001-01-26 2002-10-11 Nokia Mobile Phones Ltd 半導体装置
JP2003282721A (ja) 2002-03-26 2003-10-03 Murata Mfg Co Ltd 半導体装置および送受信装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962713A (en) * 1972-06-02 1976-06-08 Texas Instruments Incorporated Large value capacitor
US4153988A (en) * 1977-07-15 1979-05-15 International Business Machines Corporation High performance integrated circuit semiconductor package and method of making
JP2520419B2 (ja) * 1987-04-17 1996-07-31 日本電気株式会社 資源アクセス方式
DE3879771D1 (de) * 1987-05-27 1993-05-06 Siemens Ag Aetzverfahren zum erzeugen von lochoeffnungen oder graeben in n-dotiertem silizium.
JPH01251778A (ja) * 1988-03-31 1989-10-06 Toshiba Corp Ｉｃカード
JPH0635462Y2 (ja) * 1988-08-11 1994-09-14 株式会社村田製作所 積層型コンデンサ
RU2082258C1 (ru) * 1991-08-14 1997-06-20 Сименс АГ Схемная структура с по меньшей мере одним конденсатором и способ ее изготовления

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4429289A1 (de) * 1994-08-18 1996-02-22 Telefunken Microelectron Integrierte Schaltungsanordnung
DE102008035993A1 (de) * 2008-08-01 2010-02-18 Infineon Technologies Ag Leistungshalbleitermodul
DE102008035993B4 (de) 2008-08-01 2018-10-11 Infineon Technologies Ag Leistungshalbleitermodul

Also Published As

Publication number Publication date
DE4219031A1 (de) 1993-12-16
EP0573838A3 (OSRAM) 1994-08-31
JPH0669416A (ja) 1994-03-11
US5365405A (en) 1994-11-15
EP0573838B1 (de) 1997-03-05
DE59305563D1 (de) 1997-04-10
EP0573838A2 (de) 1993-12-15

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee