DE4139157C2 - - Google Patents

Info

Publication number
DE4139157C2
DE4139157C2 DE4139157A DE4139157A DE4139157C2 DE 4139157 C2 DE4139157 C2 DE 4139157C2 DE 4139157 A DE4139157 A DE 4139157A DE 4139157 A DE4139157 A DE 4139157A DE 4139157 C2 DE4139157 C2 DE 4139157C2
Authority
DE
Germany
Prior art keywords
weight percent
semiconductor ceramic
ohmic electrode
semiconductor
glass frit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4139157A
Other languages
German (de)
English (en)
Other versions
DE4139157A1 (de
Inventor
Kiyomi Nagaokakyo Kyoto Jp Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of DE4139157A1 publication Critical patent/DE4139157A1/de
Application granted granted Critical
Publication of DE4139157C2 publication Critical patent/DE4139157C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Conductive Materials (AREA)
  • Thermistors And Varistors (AREA)
DE4139157A 1990-11-30 1991-11-28 Ohmsche elektrodenmaterialien fuer halbleiterkeramiken und hieraus hergestellte halbleiterkeramikelemente Granted DE4139157A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34086090 1990-11-30

Publications (2)

Publication Number Publication Date
DE4139157A1 DE4139157A1 (de) 1992-06-04
DE4139157C2 true DE4139157C2 (enExample) 1993-08-12

Family

ID=18340978

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4139157A Granted DE4139157A1 (de) 1990-11-30 1991-11-28 Ohmsche elektrodenmaterialien fuer halbleiterkeramiken und hieraus hergestellte halbleiterkeramikelemente

Country Status (2)

Country Link
JP (1) JPH0562804A (enExample)
DE (1) DE4139157A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4323149A1 (de) * 1993-07-10 1995-01-12 Audi Ag Elektrode zum Widerstandsschweißen
DE19621931C1 (de) * 1996-05-31 1997-11-13 Degussa Silberhaltige Einbrennpaste zur Kontaktierung von keramischen Kaltleitern

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677204U (ja) * 1993-03-30 1994-10-28 株式会社村田製作所 サーミスタ装置
DE19509132A1 (de) * 1995-03-14 1996-09-19 Roth Technik Gmbh Glasartige Zusammensetzung
JP2014123604A (ja) * 2012-12-20 2014-07-03 Hitachi Metals Ltd Ｐｔｃ素子及び発熱モジュール
JPWO2015115422A1 (ja) * 2014-01-28 2017-03-23 日立金属株式会社 Ｐｔｃ素子および発熱モジュール

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779804A (en) * 1970-12-30 1973-12-18 Nat Lead Co Electrodes for ceramic bodies
JPS59144116A (ja) * 1983-02-07 1984-08-18 株式会社村田製作所 還元再酸化型半導体磁器コンデンサの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4323149A1 (de) * 1993-07-10 1995-01-12 Audi Ag Elektrode zum Widerstandsschweißen
DE19621931C1 (de) * 1996-05-31 1997-11-13 Degussa Silberhaltige Einbrennpaste zur Kontaktierung von keramischen Kaltleitern

Also Published As

Publication number Publication date
JPH0562804A (ja) 1993-03-12
DE4139157A1 (de) 1992-06-04

Similar Documents

Publication Publication Date Title
DE69737053T2 (de) Chip-Widerstand und Verfahren zu dessen Herstellung
DE3317963C2 (de) Keramikkondensator mit Schichtaufbau
DE3621667C2 (enExample)
DE112005001527B4 (de) Elektrisch leitfähige Paste und eine elektrisch leitfähige Paste aufweisendes keramisches Elektronikbauelment
DE3930623C2 (enExample)
DE3785946T2 (de) Halbleiterbauelement aus positiver keramik.
DE4010827A1 (de) Monolithischer keramischer kondensator
EP0327828B1 (de) Unter Stickstoff einbrennbare Widerstandsmassen
DE3434449A1 (de) Keramisches mehrschichtsubstrat und verfahren zu seiner herstellung
DE10359264A1 (de) Mehrschichtchipvaristor und Verfahren zu dessen Herstellung
DE2061670B2 (de) Spannungsabhängige Widerstände vom Oberflächensperrschichttyp
DE2650465C2 (de) Material und Verfahren zur Herstellung leitender Anschlüsse an elektrischen Metallkeramik-Bauelementen
DE69830091T2 (de) Chip-Vielschichtlaminat-Varistor und Verfahren zu seiner Herstellung
DE4139157C2 (enExample)
DE2307322B2 (de) Varistor
DE102005026731A1 (de) Mehrschichtchipvaristor
DE2445626C2 (de) Varistor
EP0124943B1 (de) Dielektrisches Glas für Mehrschichtschaltungen und damit versehene Dickfilmschaltungen
DE112018004778T5 (de) Dickschichtwiderstandselementpaste und Verwendung einer Dickschichtwiderstandselementpaste in einem Widerstand
DE2640316A1 (de) Material fuer einen elektrischen widerstand und verfahren zur herstellung eines widerstandes
DE602005001242T2 (de) Eine Dickschicht-Widerstandspaste, ein Dickschicht-Widerstand hergestellt unter Verwendung der Dickschicht-Widerstandspaste und eine elektronische Vorrichtung umfassend den Dickschicht-Widerstand
DE10011009B4 (de) Thermistor mit negativem Temperaturkoeffizient
DE2935421C2 (de) Siebdrucktinte
DE3016412A1 (de) Temperaturabhaengiges elektrisches bauelement und verfahren und material zur herstellung desselben
DE2835562C2 (enExample)

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee