DE4109956C2 - - Google Patents

Info

Publication number
DE4109956C2
DE4109956C2 DE4109956A DE4109956A DE4109956C2 DE 4109956 C2 DE4109956 C2 DE 4109956C2 DE 4109956 A DE4109956 A DE 4109956A DE 4109956 A DE4109956 A DE 4109956A DE 4109956 C2 DE4109956 C2 DE 4109956C2
Authority
DE
Germany
Prior art keywords
semiconductor wafer
reflector
light
reflection chamber
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE4109956A
Other languages
German (de)
English (en)
Other versions
DE4109956A1 (de
Inventor
Ronald Dr.Rer.Nat. 8000 Muenchen De Kakoschke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE4109956A priority Critical patent/DE4109956A1/de
Priority to EP92104811A priority patent/EP0505928B1/de
Priority to DE59209959T priority patent/DE59209959D1/de
Priority to JP09878392A priority patent/JP3215155B2/ja
Publication of DE4109956A1 publication Critical patent/DE4109956A1/de
Application granted granted Critical
Publication of DE4109956C2 publication Critical patent/DE4109956C2/de
Priority to US08/271,563 priority patent/US5399523A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation

Landscapes

  • Recrystallisation Techniques (AREA)
DE4109956A 1991-03-26 1991-03-26 Verfahren zum kurzzeittempern einer halbleiterscheibe durch bestrahlung Granted DE4109956A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE4109956A DE4109956A1 (de) 1991-03-26 1991-03-26 Verfahren zum kurzzeittempern einer halbleiterscheibe durch bestrahlung
EP92104811A EP0505928B1 (de) 1991-03-26 1992-03-19 Verfahren zum Kurzzeittempern einer Halbleiterscheibe durch Bestrahlung
DE59209959T DE59209959D1 (de) 1991-03-26 1992-03-19 Verfahren zum Kurzzeittempern einer Halbleiterscheibe durch Bestrahlung
JP09878392A JP3215155B2 (ja) 1991-03-26 1992-03-24 照射による半導体ウェーハの急速熱処理方法
US08/271,563 US5399523A (en) 1991-03-26 1994-07-07 Method for the rapid thermal processing of a semiconductor wafer by irradiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4109956A DE4109956A1 (de) 1991-03-26 1991-03-26 Verfahren zum kurzzeittempern einer halbleiterscheibe durch bestrahlung

Publications (2)

Publication Number Publication Date
DE4109956A1 DE4109956A1 (de) 1992-10-01
DE4109956C2 true DE4109956C2 (https=) 1993-03-11

Family

ID=6428260

Family Applications (2)

Application Number Title Priority Date Filing Date
DE4109956A Granted DE4109956A1 (de) 1991-03-26 1991-03-26 Verfahren zum kurzzeittempern einer halbleiterscheibe durch bestrahlung
DE59209959T Expired - Lifetime DE59209959D1 (de) 1991-03-26 1992-03-19 Verfahren zum Kurzzeittempern einer Halbleiterscheibe durch Bestrahlung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE59209959T Expired - Lifetime DE59209959D1 (de) 1991-03-26 1992-03-19 Verfahren zum Kurzzeittempern einer Halbleiterscheibe durch Bestrahlung

Country Status (4)

Country Link
US (1) US5399523A (https=)
EP (1) EP0505928B1 (https=)
JP (1) JP3215155B2 (https=)
DE (2) DE4109956A1 (https=)

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US5561735A (en) * 1994-08-30 1996-10-01 Vortek Industries Ltd. Rapid thermal processing apparatus and method
WO1997007931A1 (en) * 1995-08-22 1997-03-06 Seagate Technology, Inc. Laser surface treatments for magnetic recording media
US6048255A (en) * 1995-08-22 2000-04-11 Seagate Technology, Inc. Pulsed laser surface treatments for magnetic recording media
US6035100A (en) * 1997-05-16 2000-03-07 Applied Materials, Inc. Reflector cover for a semiconductor processing chamber
WO1999045573A2 (de) * 1998-03-02 1999-09-10 Steag Rtp Systems Gmbh Vorrichtung für eine thermische behandlung von substraten
US6210484B1 (en) * 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6108491A (en) * 1998-10-30 2000-08-22 Applied Materials, Inc. Dual surface reflector
US6310328B1 (en) 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
US6303411B1 (en) 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
US6476362B1 (en) 2000-09-12 2002-11-05 Applied Materials, Inc. Lamp array for thermal processing chamber
US6594446B2 (en) * 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6970644B2 (en) * 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
JP2005515425A (ja) * 2001-12-26 2005-05-26 ボルテック インダストリーズ リミテッド 温度測定および熱処理方法およびシステム
US6596604B1 (en) 2002-07-22 2003-07-22 Atmel Corporation Method of preventing shift of alignment marks during rapid thermal processing
US6879777B2 (en) 2002-10-03 2005-04-12 Asm America, Inc. Localized heating of substrates using optics
US6720531B1 (en) 2002-12-11 2004-04-13 Asm America, Inc. Light scattering process chamber walls
KR20120045040A (ko) 2002-12-20 2012-05-08 맷슨 테크날러지 캐나다 인코퍼레이티드 피가공물 지지 방법
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US7127367B2 (en) 2003-10-27 2006-10-24 Applied Materials, Inc. Tailored temperature uniformity
US20080090309A1 (en) * 2003-10-27 2008-04-17 Ranish Joseph M Controlled annealing method
WO2005059991A1 (en) * 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
KR100666052B1 (ko) * 2004-02-12 2007-01-09 조극래 원적외선이용한 건조장치
DE102005038672A1 (de) * 2005-08-16 2007-02-22 Mattson Thermal Products Gmbh Vorrichtung zum thermischen Behandeln von Halbleitersubstraten
US7184657B1 (en) 2005-09-17 2007-02-27 Mattson Technology, Inc. Enhanced rapid thermal processing apparatus and method
JP5967859B2 (ja) * 2006-11-15 2016-08-10 マトソン テクノロジー、インコーポレイテッド 熱処理中の被加工物を支持するシステムおよび方法
US8222574B2 (en) * 2007-01-15 2012-07-17 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
DE102007058002B4 (de) * 2007-12-03 2016-03-17 Mattson Thermal Products Gmbh Vorrichtung zum thermischen Behandeln von scheibenförmigen Halbleitersubstraten
CN102089873A (zh) 2008-05-16 2011-06-08 加拿大马特森技术有限公司 工件破损防止方法及设备
JP5616006B2 (ja) * 2008-06-10 2014-10-29 大日本スクリーン製造株式会社 熱処理装置
US8111978B2 (en) * 2008-07-11 2012-02-07 Applied Materials, Inc. Rapid thermal processing chamber with shower head
JP6183692B2 (ja) * 2013-06-21 2017-08-23 国立研究開発法人産業技術総合研究所 熱処理装置
US11171023B2 (en) * 2015-10-09 2021-11-09 Applied Materials, Inc. Diode laser for wafer heating for EPI processes
US10727094B2 (en) 2016-01-29 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd Thermal reflector device for semiconductor fabrication tool
US11181244B2 (en) 2018-03-26 2021-11-23 Hewlett-Packard Development Company, L.P. Lighting assembly

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CA619224A (en) * 1961-05-02 E. Branstrom George Heat exchanger
US3052789A (en) * 1959-09-17 1962-09-04 Continental Can Co Radiant heater and method of shielding the same
US3763348A (en) * 1972-01-05 1973-10-02 Argus Eng Co Apparatus and method for uniform illumination of a surface
US4001047A (en) * 1975-05-19 1977-01-04 General Electric Company Temperature gradient zone melting utilizing infrared radiation
JPS5764937A (en) * 1980-10-09 1982-04-20 Ushio Inc Annealing device
GB2091858B (en) * 1980-12-11 1984-09-26 Infraroedteknik Ab Surface treatment of objects
US4469529A (en) * 1981-12-04 1984-09-04 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafer by means of application of radiated light with supplemental circumferential heating
US4468259A (en) * 1981-12-04 1984-08-28 Ushio Denki Kabushiki Kaisha Uniform wafer heating by controlling light source and circumferential heating of wafer
JPS5959876A (ja) * 1982-09-30 1984-04-05 Ushio Inc 光照射炉の運転方法
JPS59169125A (ja) * 1983-03-16 1984-09-25 Ushio Inc 半導体ウエハ−の加熱方法
JPS60240923A (ja) * 1984-05-15 1985-11-29 Sanyo Electric Co Ltd 電気調理器
US4729962A (en) * 1986-03-24 1988-03-08 The United States Of America As Represented By The United States Department Of Energy Semiconductor junction formation by directed heat
JPS63260018A (ja) * 1987-04-17 1988-10-27 Hitachi Ltd ランプアニ−ル装置
JPS647519A (en) * 1987-06-30 1989-01-11 Oki Electric Ind Co Ltd Annealing device
US4766288A (en) * 1987-08-17 1988-08-23 Xerox Corporation Flash fusing reflector cavity
US4981815A (en) * 1988-05-09 1991-01-01 Siemens Aktiengesellschaft Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors
FR2653215A1 (fr) * 1989-10-17 1991-04-19 Sitesa Addax Dispositif de chauffe d'un corps plat, en particulier d'une plaque de semi-conducteur.

Also Published As

Publication number Publication date
EP0505928A2 (de) 1992-09-30
EP0505928B1 (de) 2002-06-12
JPH05114571A (ja) 1993-05-07
DE59209959D1 (de) 2002-07-18
US5399523A (en) 1995-03-21
DE4109956A1 (de) 1992-10-01
EP0505928A3 (en) 1994-08-17
JP3215155B2 (ja) 2001-10-02

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
R071 Expiry of right