DE4108818C2 - - Google Patents

Info

Publication number
DE4108818C2
DE4108818C2 DE4108818A DE4108818A DE4108818C2 DE 4108818 C2 DE4108818 C2 DE 4108818C2 DE 4108818 A DE4108818 A DE 4108818A DE 4108818 A DE4108818 A DE 4108818A DE 4108818 C2 DE4108818 C2 DE 4108818C2
Authority
DE
Germany
Prior art keywords
mos transistor
geometric
area
highly doped
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4108818A
Other languages
German (de)
English (en)
Other versions
DE4108818A1 (de
Inventor
Herbert Dipl.-Ing. Eichfeld (Univ.), 8000 Muenchen, De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE4108818A priority Critical patent/DE4108818A1/de
Publication of DE4108818A1 publication Critical patent/DE4108818A1/de
Application granted granted Critical
Publication of DE4108818C2 publication Critical patent/DE4108818C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
DE4108818A 1991-03-18 1991-03-18 Geometrischer mos-transistor Granted DE4108818A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE4108818A DE4108818A1 (de) 1991-03-18 1991-03-18 Geometrischer mos-transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4108818A DE4108818A1 (de) 1991-03-18 1991-03-18 Geometrischer mos-transistor

Publications (2)

Publication Number Publication Date
DE4108818A1 DE4108818A1 (de) 1992-09-24
DE4108818C2 true DE4108818C2 (enExample) 1993-04-22

Family

ID=6427594

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4108818A Granted DE4108818A1 (de) 1991-03-18 1991-03-18 Geometrischer mos-transistor

Country Status (1)

Country Link
DE (1) DE4108818A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7116318B2 (en) 2002-04-24 2006-10-03 E Ink Corporation Backplanes for display applications, and components for use therein
US7190008B2 (en) 2002-04-24 2007-03-13 E Ink Corporation Electro-optic displays, and components for use therein

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2159592C3 (de) * 1971-12-01 1981-12-17 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Integrierte Halbleiteranordnung
DE3417959A1 (de) * 1984-05-15 1985-11-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekttransistor

Also Published As

Publication number Publication date
DE4108818A1 (de) 1992-09-24

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee