DE4090437T1 - Belichtungsverfahren und -vorrichtung mit einem Strahl geladener Teilchen sowie Aperturblende und Herstellverfahren einer solchen - Google Patents

Belichtungsverfahren und -vorrichtung mit einem Strahl geladener Teilchen sowie Aperturblende und Herstellverfahren einer solchen

Info

Publication number
DE4090437T1
DE4090437T1 DE4090437T DE4090437T DE4090437T1 DE 4090437 T1 DE4090437 T1 DE 4090437T1 DE 4090437 T DE4090437 T DE 4090437T DE 4090437 T DE4090437 T DE 4090437T DE 4090437 T1 DE4090437 T1 DE 4090437T1
Authority
DE
Germany
Prior art keywords
manufacturing
well
charged particles
aperture diaphragm
exposure method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE4090437T
Other languages
English (en)
Inventor
Hiroaki Wakabayashi
Yoshinori Nakayama
Fumio Murai
Shinji Okazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE4090437T1 publication Critical patent/DE4090437T1/de
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31788—Lithography by projection through mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
DE4090437T 1989-03-24 1990-03-23 Belichtungsverfahren und -vorrichtung mit einem Strahl geladener Teilchen sowie Aperturblende und Herstellverfahren einer solchen Ceased DE4090437T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7068589 1989-03-24
PCT/JP1990/000388 WO1990011614A1 (fr) 1989-03-24 1990-03-23 Procede d'exposition a un faisceau charge, installation relative, diaphragme d'ouverture et procede de production de celui-ci

Publications (1)

Publication Number Publication Date
DE4090437T1 true DE4090437T1 (de) 1997-07-24

Family

ID=13438748

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4090437T Ceased DE4090437T1 (de) 1989-03-24 1990-03-23 Belichtungsverfahren und -vorrichtung mit einem Strahl geladener Teilchen sowie Aperturblende und Herstellverfahren einer solchen

Country Status (2)

Country Link
DE (1) DE4090437T1 (de)
WO (1) WO1990011614A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031885A (ja) 1998-07-16 2000-01-28 Ntt Mobil Communication Network Inc 移動局正常接続確認方法
JP6252403B2 (ja) * 2014-08-22 2017-12-27 株式会社ニューフレアテクノロジー アパーチャ部材製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213053A (en) * 1978-11-13 1980-07-15 International Business Machines Corporation Electron beam system with character projection capability
JPS62260322A (ja) * 1986-05-06 1987-11-12 Hitachi Ltd 可変成形型電子線描画装置
JPH06273713A (ja) * 1993-03-18 1994-09-30 Ricoh Co Ltd 画像投影装置および画像投影用画像形成装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144676A (en) * 1977-05-23 1978-12-16 Nippon Telegr & Teleph Corp <Ntt> Electron beam mask and production of the same
JPS5471992A (en) * 1977-11-18 1979-06-08 Cho Lsi Gijutsu Kenkyu Kumiai Electron beam shaping aperture mask
JPS5824009B2 (ja) * 1978-10-23 1983-05-18 日本電子株式会社 電子線露光装置
JPS55107780A (en) * 1979-02-07 1980-08-19 Hitachi Ltd Etching method
JPS6273713A (ja) * 1985-09-27 1987-04-04 Toshiba Corp 荷電ビ−ム照射装置
JPS63110635A (ja) * 1986-10-27 1988-05-16 Sharp Corp 電子ビ−ム描画装置用アパ−チヤ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213053A (en) * 1978-11-13 1980-07-15 International Business Machines Corporation Electron beam system with character projection capability
JPS62260322A (ja) * 1986-05-06 1987-11-12 Hitachi Ltd 可変成形型電子線描画装置
JPH06273713A (ja) * 1993-03-18 1994-09-30 Ricoh Co Ltd 画像投影装置および画像投影用画像形成装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
J. Vac. Sci. Technol. B5(1), Jan/Feb 1987, S. 70-74 *
J. Vac. Sci. Technol. B6(6), Nov/Dec 1988, S. 2112-2114 *
US-Z.: Solid State Technology, Sept. 1984, "High Troughput submicron Lithography with Elctron Beam Proximity Printing", H. Bohlen et.al., p. 210-217 *

Also Published As

Publication number Publication date
WO1990011614A1 (fr) 1990-10-04

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Legal Events

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OP8 Request for examination as to paragraph 44 patent law
8131 Rejection