DE4040035C2 - - Google Patents

Info

Publication number
DE4040035C2
DE4040035C2 DE4040035A DE4040035A DE4040035C2 DE 4040035 C2 DE4040035 C2 DE 4040035C2 DE 4040035 A DE4040035 A DE 4040035A DE 4040035 A DE4040035 A DE 4040035A DE 4040035 C2 DE4040035 C2 DE 4040035C2
Authority
DE
Germany
Prior art keywords
carbon
diamond
bonds
layers
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE4040035A
Other languages
German (de)
English (en)
Other versions
DE4040035A1 (de
Inventor
Michael A. Toledo Ohio Us Tamor
Kenneth C. Plymouth Mich. Us Hass
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ford Werke GmbH
Original Assignee
Ford Werke GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ford Werke GmbH filed Critical Ford Werke GmbH
Publication of DE4040035A1 publication Critical patent/DE4040035A1/de
Application granted granted Critical
Publication of DE4040035C2 publication Critical patent/DE4040035C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE4040035A 1990-01-12 1990-12-14 Sehr harter metallischer kohlenstoff Granted DE4040035A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46406790A 1990-01-12 1990-01-12

Publications (2)

Publication Number Publication Date
DE4040035A1 DE4040035A1 (de) 1991-07-25
DE4040035C2 true DE4040035C2 (enExample) 1992-11-19

Family

ID=23842415

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4040035A Granted DE4040035A1 (de) 1990-01-12 1990-12-14 Sehr harter metallischer kohlenstoff

Country Status (2)

Country Link
CA (1) CA2033138A1 (enExample)
DE (1) DE4040035A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4339326A1 (de) * 1993-11-19 1995-05-24 Winter Cvd Technik Gmbh Abrichtrolle für Schleifscheiben

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4339326A1 (de) * 1993-11-19 1995-05-24 Winter Cvd Technik Gmbh Abrichtrolle für Schleifscheiben

Also Published As

Publication number Publication date
DE4040035A1 (de) 1991-07-25
CA2033138A1 (en) 1991-07-13

Similar Documents

Publication Publication Date Title
DE60017968T2 (de) Verfahren zur Herstellung von Kohlenstoff-Nanoröhren
DE3876120T2 (de) Chemisches gasphasenabscheidungsverfahren zur herstellung einer kohlenstoffschicht.
Nagakura Study of metallic carbides by electron diffraction part IV. Cobalt carbides
EP0102489A2 (de) Supraleitendes Faserbündel und Verfahren zu dessen Herstellung
DE3586465T2 (de) Ueberzugsfilm, verfahren und vorrichtung zur herstellung dieses filmes.
DE2357814A1 (de) Graphitkoerper mit siliciumcarbidbeschichtung
EP0129686B1 (de) Supraleitende Faser
DE3878110T2 (de) Zusammengesetztes magnetisches material und verfahren zu seiner herstellung.
DE69103579T2 (de) Tiegel aus Bornitrid und seine Herstellung.
DE2252343A1 (de) Verfahren zur herstellung von kuenstlichen diamanten
DE1521553A1 (de) Verfahren zur Herstellung von Schichten
DE3784844T2 (de) Sekundaerbatterie mit nichtwaessrigen elektrolyten.
DE3446956A1 (de) Verfahren zum herstellen eines einkristall-substrates aus siliciumcarbid
DE69504800T2 (de) Verfahren zur Herstellung von bordotierten Diamantschichten
DE3810237C2 (enExample)
DE69009799T2 (de) Verfahren zur Herstellung einer Einkristallschicht aus Diamant.
DE1521465C3 (de) Verfahren zur Herstellung von texturlosem polykristallinen Silicium
DE102013007809A1 (de) Verfahren zum beschichten eines graphitmaterials mit pyrolytischem bornitrid und nach diesem verfahren erhaltener beschichteter artikel
DE4222406C2 (de) Verfahren zur Herstellung von Diamantschichten durch Dampfphasensynthese
DE69720791T2 (de) Verfahren zur herstellung von diamandfilmen unter verwendung eines dampfphasensynthesesystems
EP0246037B1 (en) Graphite intercalation compounds, and process for their preparation
DE1771572A1 (de) Verfahren zum Niederschlagen einer aus Niob und Zinn bestehenden kristallinen Schicht
DE4040035A1 (de) Sehr harter metallischer kohlenstoff
DE102004034667A1 (de) Synthetische Diamantpartikel und Verfahren zur Herstellung von synthetischen Diamantpartikeln
DE3446334A1 (de) Verfahren zur herstellung von <111>-vorzugsorientiertem wolfram

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee