DE4019988C2 - - Google Patents
Info
- Publication number
- DE4019988C2 DE4019988C2 DE19904019988 DE4019988A DE4019988C2 DE 4019988 C2 DE4019988 C2 DE 4019988C2 DE 19904019988 DE19904019988 DE 19904019988 DE 4019988 A DE4019988 A DE 4019988A DE 4019988 C2 DE4019988 C2 DE 4019988C2
- Authority
- DE
- Germany
- Prior art keywords
- film
- dielectric layer
- sin
- bonds
- layer sequence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 230000027455 binding Effects 0.000 claims 1
- 238000009739 binding Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
Landscapes
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1162138A JPH0754750B2 (ja) | 1989-06-23 | 1989-06-23 | 薄膜ｅｌ素子 |
| JP1173631A JPH0340393A (ja) | 1989-07-05 | 1989-07-05 | 薄膜ｅｌ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4019988A1 DE4019988A1 (de) | 1991-01-10 |
| DE4019988C2 true DE4019988C2 (enrdf_load_stackoverflow) | 1992-07-09 |
Family
ID=26488030
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19904042389 Expired - Fee Related DE4042389C2 (de) | 1989-06-23 | 1990-06-22 | Dünnfilm-Elektrolumineszenzvorrichtung |
| DE19904019988 Granted DE4019988A1 (de) | 1989-06-23 | 1990-06-22 | Duennfilm-eld |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19904042389 Expired - Fee Related DE4042389C2 (de) | 1989-06-23 | 1990-06-22 | Dünnfilm-Elektrolumineszenzvorrichtung |
Country Status (1)
| Country | Link |
|---|---|
| DE (2) | DE4042389C2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69027337T2 (de) * | 1990-11-02 | 1997-01-02 | Komatsu Mfg Co Ltd | Elektroluminszentes dünnfilmelement |
| DE4333416C2 (de) * | 1993-09-30 | 1996-05-09 | Reinhard Dr Schwarz | Verfahren zur Herstellung von mikrokristallinen Schichten und deren Verwendung |
| DE4345229C2 (de) * | 1993-09-30 | 1998-04-09 | Reinhard Dr Schwarz | Verfahren zum Herstellen von lumineszenten Elementstrukturen und Elementstrukturen |
| DE10005560A1 (de) * | 2000-02-09 | 2001-08-23 | Bosch Gmbh Robert | Flächiges Leuchtelement |
| JP2002110344A (ja) | 2000-09-29 | 2002-04-12 | Tdk Corp | 薄膜ｅｌ素子及びその製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4188565A (en) * | 1977-09-16 | 1980-02-12 | Sharp Kabushiki Kaisha | Oxygen atom containing film for a thin-film electroluminescent element |
| EP0109589A1 (en) * | 1982-11-15 | 1984-05-30 | GTE Products Corporation | Electroluminescent thin film display device |
| DE3712855A1 (de) * | 1986-09-29 | 1988-04-07 | Ricoh Kk | Duennschicht-elektrolumineszenzvorrichtung |
-
1990
- 1990-06-22 DE DE19904042389 patent/DE4042389C2/de not_active Expired - Fee Related
- 1990-06-22 DE DE19904019988 patent/DE4019988A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE4042389C2 (de) | 1993-10-21 |
| DE4042389A1 (enrdf_load_stackoverflow) | 1991-11-28 |
| DE4019988A1 (de) | 1991-01-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8172 | Supplementary division/partition in: |
Ref country code: DE Ref document number: 4042389 Format of ref document f/p: P |
|
| Q171 | Divided out to: |
Ref document number: 4042389 Ref country code: DE |
|
| AH | Division in |
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|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| AH | Division in |
Ref country code: DE Ref document number: 4042389 Format of ref document f/p: P |
|
| 8328 | Change in the person/name/address of the agent |
Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN |
|
| 8339 | Ceased/non-payment of the annual fee |