DE3888672D1 - Gaas-halbleiterschaltungsanordnungen mit isolierender langmuir-blodgett-schicht. - Google Patents

Gaas-halbleiterschaltungsanordnungen mit isolierender langmuir-blodgett-schicht.

Info

Publication number
DE3888672D1
DE3888672D1 DE88909016T DE3888672T DE3888672D1 DE 3888672 D1 DE3888672 D1 DE 3888672D1 DE 88909016 T DE88909016 T DE 88909016T DE 3888672 T DE3888672 T DE 3888672T DE 3888672 D1 DE3888672 D1 DE 3888672D1
Authority
DE
Germany
Prior art keywords
insulating
semiconductor circuit
circuit arrangements
langmuir blodgett
gas semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88909016T
Other languages
English (en)
Other versions
DE3888672T2 (de
Inventor
Jack Josefowicz
David Rensch
Vladimir Rodov
Meir Bartur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of DE3888672D1 publication Critical patent/DE3888672D1/de
Application granted granted Critical
Publication of DE3888672T2 publication Critical patent/DE3888672T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02285—Langmuir-Blodgett techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
DE3888672T 1987-10-09 1988-08-15 Gaas-halbleiterschaltungsanordnungen mit isolierender langmuir-blodgett-schicht. Expired - Fee Related DE3888672T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10708287A 1987-10-09 1987-10-09
PCT/US1988/002758 WO1989003588A1 (en) 1987-10-09 1988-08-15 GaAs ELECTRICAL CIRCUIT DEVICES WITH LANGMUIR-BLODGETT INSULATOR LAYER

Publications (2)

Publication Number Publication Date
DE3888672D1 true DE3888672D1 (de) 1994-04-28
DE3888672T2 DE3888672T2 (de) 1994-06-30

Family

ID=22314737

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3888672T Expired - Fee Related DE3888672T2 (de) 1987-10-09 1988-08-15 Gaas-halbleiterschaltungsanordnungen mit isolierender langmuir-blodgett-schicht.

Country Status (4)

Country Link
EP (1) EP0333838B1 (de)
JP (1) JPH02501609A (de)
DE (1) DE3888672T2 (de)
WO (1) WO1989003588A1 (de)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1572181A (en) * 1975-08-18 1980-07-23 Ici Ltd Device comprising a thin film of organic materila
GB2117669A (en) * 1982-03-05 1983-10-19 Nat Res Dev Polymeric films
JPS59134874A (ja) * 1983-01-21 1984-08-02 Hitachi Ltd 半導体装置の製造方法
JPS6265471A (ja) * 1985-09-18 1987-03-24 Toshiba Corp Ｍｉｓ型半導体素子
JPH0770708B2 (ja) * 1986-03-25 1995-07-31 株式会社東芝 電界効果トランジスタ
DE3781315T2 (de) * 1986-05-09 1993-03-04 Nippon Oils & Fats Co Ltd Ultraduenne membran vom langmuir-blodgett-typ aus polyfumuraten.
CA1302675C (en) * 1986-05-20 1992-06-09 Masakazu Uekita Thin film and device having the same

Also Published As

Publication number Publication date
EP0333838B1 (de) 1994-03-23
JPH02501609A (ja) 1990-05-31
WO1989003588A1 (en) 1989-04-20
EP0333838A1 (de) 1989-09-27
DE3888672T2 (de) 1994-06-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee