DE3887873T2 - Phantom-esd-schutzschaltung mit e-feldverdichtung. - Google Patents

Phantom-esd-schutzschaltung mit e-feldverdichtung.

Info

Publication number
DE3887873T2
DE3887873T2 DE3887873T DE3887873T DE3887873T2 DE 3887873 T2 DE3887873 T2 DE 3887873T2 DE 3887873 T DE3887873 T DE 3887873T DE 3887873 T DE3887873 T DE 3887873T DE 3887873 T2 DE3887873 T2 DE 3887873T2
Authority
DE
Germany
Prior art keywords
diodes
transistors
transistor
pad
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3887873T
Other languages
German (de)
English (en)
Other versions
DE3887873D1 (de
Inventor
Xiaonan Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisys Corp
Original Assignee
Unisys Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisys Corp filed Critical Unisys Corp
Publication of DE3887873D1 publication Critical patent/DE3887873D1/de
Application granted granted Critical
Publication of DE3887873T2 publication Critical patent/DE3887873T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
DE3887873T 1987-10-19 1988-10-11 Phantom-esd-schutzschaltung mit e-feldverdichtung. Expired - Fee Related DE3887873T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/109,942 US4750081A (en) 1987-10-19 1987-10-19 Phantom ESD protection circuit employing E-field crowding
PCT/US1988/003448 WO1989004059A1 (en) 1987-10-19 1988-10-11 Phantom esd protection circuit employing e-field crowding

Publications (2)

Publication Number Publication Date
DE3887873D1 DE3887873D1 (de) 1994-03-24
DE3887873T2 true DE3887873T2 (de) 1994-09-01

Family

ID=22330413

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3887873T Expired - Fee Related DE3887873T2 (de) 1987-10-19 1988-10-11 Phantom-esd-schutzschaltung mit e-feldverdichtung.

Country Status (5)

Country Link
US (1) US4750081A (cg-RX-API-DMAC7.html)
EP (1) EP0335965B1 (cg-RX-API-DMAC7.html)
JP (1) JPH02501696A (cg-RX-API-DMAC7.html)
DE (1) DE3887873T2 (cg-RX-API-DMAC7.html)
WO (1) WO1989004059A1 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10129012C1 (de) * 2001-06-15 2002-10-10 Infineon Technologies Ag Verfahren zur Entwicklung von ESD-Schutzelementen mittels Bauelementesimulation

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01262654A (ja) * 1988-04-14 1989-10-19 Toshiba Corp 半導体装置
US5029041A (en) * 1989-08-31 1991-07-02 Northern Telecom Limited Electrostatic discharge protection for a printed circuit board
US6979908B1 (en) * 2000-01-11 2005-12-27 Texas Instruments Incorporated Input/output architecture for integrated circuits with efficient positioning of integrated circuit elements
US9024526B1 (en) 2012-06-11 2015-05-05 Imaging Systems Technology, Inc. Detector element with antenna
US10152146B2 (en) 2015-09-16 2018-12-11 Microsoft Technology Licensing, Llc Cosmetically hidden electrostatic discharge protection structures

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4106048A (en) * 1977-04-27 1978-08-08 Rca Corp. Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor
JPS57139957A (en) * 1981-02-24 1982-08-30 Mitsubishi Electric Corp Protective diode of semiconductor integrated circuit device
US4481421A (en) * 1982-05-24 1984-11-06 The United States Of America As Represented By The Secretary Of The Navy Lithium-6 coated wire mesh neutron detector
US4605980A (en) * 1984-03-02 1986-08-12 Zilog, Inc. Integrated circuit high voltage protection
JPS60246668A (ja) * 1984-05-22 1985-12-06 Mitsubishi Electric Corp 半導体集積回路
US4692781B2 (en) * 1984-06-06 1998-01-20 Texas Instruments Inc Semiconductor device with electrostatic discharge protection
DE3422132C1 (de) * 1984-06-14 1986-01-09 Texas Instruments Deutschland Gmbh, 8050 Freising Schutzschaltungsanordnung
WO1986006213A1 (en) * 1985-04-08 1986-10-23 Sgs Semiconductor Corporation Electrostatic discharge input protection network
JPS61295651A (ja) * 1985-06-24 1986-12-26 Mitsubishi Electric Corp 半導体入力保護装置
IT1186338B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione
IT1188398B (it) * 1986-02-18 1988-01-07 Sgs Microelettronica Spa Struttura integrata di protezione da scariche elettrostatische e dispositivo a semiconduttore incorporante la stessa

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10129012C1 (de) * 2001-06-15 2002-10-10 Infineon Technologies Ag Verfahren zur Entwicklung von ESD-Schutzelementen mittels Bauelementesimulation

Also Published As

Publication number Publication date
JPH0553304B2 (cg-RX-API-DMAC7.html) 1993-08-09
WO1989004059A1 (en) 1989-05-05
US4750081A (en) 1988-06-07
EP0335965A1 (en) 1989-10-11
DE3887873D1 (de) 1994-03-24
JPH02501696A (ja) 1990-06-07
EP0335965B1 (en) 1994-02-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee