DE3884151T2 - Verfahren zur herstellung eines halbleiterfeldoxids. - Google Patents

Verfahren zur herstellung eines halbleiterfeldoxids.

Info

Publication number
DE3884151T2
DE3884151T2 DE88905313T DE3884151T DE3884151T2 DE 3884151 T2 DE3884151 T2 DE 3884151T2 DE 88905313 T DE88905313 T DE 88905313T DE 3884151 T DE3884151 T DE 3884151T DE 3884151 T2 DE3884151 T2 DE 3884151T2
Authority
DE
Germany
Prior art keywords
producing
field oxide
semiconductor field
semiconductor
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88905313T
Other languages
English (en)
Other versions
DE3884151D1 (de
Inventor
Steven Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
NCR International Inc
Original Assignee
NCR International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR International Inc filed Critical NCR International Inc
Application granted granted Critical
Publication of DE3884151D1 publication Critical patent/DE3884151D1/de
Publication of DE3884151T2 publication Critical patent/DE3884151T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
DE88905313T 1987-06-15 1988-05-31 Verfahren zur herstellung eines halbleiterfeldoxids. Expired - Fee Related DE3884151T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6192387A 1987-06-15 1987-06-15
PCT/US1988/001787 WO1988010510A1 (en) 1987-06-15 1988-05-31 Semiconductor field oxide formation process

Publications (2)

Publication Number Publication Date
DE3884151D1 DE3884151D1 (de) 1993-10-21
DE3884151T2 true DE3884151T2 (de) 1994-04-07

Family

ID=22039026

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88905313T Expired - Fee Related DE3884151T2 (de) 1987-06-15 1988-05-31 Verfahren zur herstellung eines halbleiterfeldoxids.

Country Status (4)

Country Link
EP (1) EP0318555B1 (de)
JP (1) JP2747563B2 (de)
DE (1) DE3884151T2 (de)
WO (1) WO1988010510A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5248350A (en) * 1990-11-30 1993-09-28 Ncr Corporation Structure for improving gate oxide integrity for a semiconductor formed by a recessed sealed sidewall field oxidation process
FR2672731A1 (fr) * 1991-02-07 1992-08-14 France Telecom Procede d'oxydation localisee enterree d'un substrat de silicium et circuit integre correspondant.
EP0540157A1 (de) * 1991-09-30 1993-05-05 STMicroelectronics, Inc. Verfahren zur Herstellung einer submikronen Isolierung für CMOS-Bauelemente
KR100187678B1 (ko) * 1993-11-23 1999-06-01 김영환 반도체 장치의 소자 분리막 형성방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333965A (en) * 1980-09-15 1982-06-08 General Electric Company Method of making integrated circuits
JPS59139643A (ja) * 1983-01-31 1984-08-10 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP2747563B2 (ja) 1998-05-06
JPH01503827A (ja) 1989-12-21
WO1988010510A1 (en) 1988-12-29
EP0318555B1 (de) 1993-09-15
DE3884151D1 (de) 1993-10-21
EP0318555A1 (de) 1989-06-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AT&T GLOBAL INFORMATION SOLUTIONS INTERNATIONAL IN

8327 Change in the person/name/address of the patent owner

Owner name: AT&T GLOBAL INFORMATION SOLUTIONS INTERNATIONAL IN

8327 Change in the person/name/address of the patent owner

Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR

8327 Change in the person/name/address of the patent owner

Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR

8328 Change in the person/name/address of the agent

Free format text: V. BEZOLD & SOZIEN, 80799 MUENCHEN

8339 Ceased/non-payment of the annual fee
8327 Change in the person/name/address of the patent owner

Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR

Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DEL, US