DE3880816T2 - Komplexverbindungen zur bildung von duennfilmen aus supraleitenden oxyden und verfahren zur bildung von duennfilmen aus supraleitenden oxyden. - Google Patents

Komplexverbindungen zur bildung von duennfilmen aus supraleitenden oxyden und verfahren zur bildung von duennfilmen aus supraleitenden oxyden.

Info

Publication number
DE3880816T2
DE3880816T2 DE8888905417T DE3880816T DE3880816T2 DE 3880816 T2 DE3880816 T2 DE 3880816T2 DE 8888905417 T DE8888905417 T DE 8888905417T DE 3880816 T DE3880816 T DE 3880816T DE 3880816 T2 DE3880816 T2 DE 3880816T2
Authority
DE
Germany
Prior art keywords
oxydes
conducting
thin films
forming thin
suprale
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888905417T
Other languages
English (en)
Other versions
DE3880816D1 (de
Inventor
Makoto Takahashi
Hiroshi Umino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Application granted granted Critical
Publication of DE3880816D1 publication Critical patent/DE3880816D1/de
Publication of DE3880816T2 publication Critical patent/DE3880816T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
    • H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/734—From organometallic precursors, e.g. acetylacetonates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
DE8888905417T 1987-06-16 1988-06-15 Komplexverbindungen zur bildung von duennfilmen aus supraleitenden oxyden und verfahren zur bildung von duennfilmen aus supraleitenden oxyden. Expired - Fee Related DE3880816T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14797587 1987-06-16
PCT/JP1988/000574 WO1988010323A1 (en) 1987-06-16 1988-06-15 Complex compounds for forming thin film of oxide superconductor and process for forming thin film of oxide superconductor

Publications (2)

Publication Number Publication Date
DE3880816D1 DE3880816D1 (de) 1993-06-09
DE3880816T2 true DE3880816T2 (de) 1993-08-12

Family

ID=15442333

Family Applications (2)

Application Number Title Priority Date Filing Date
DE8888905417T Expired - Fee Related DE3880816T2 (de) 1987-06-16 1988-06-15 Komplexverbindungen zur bildung von duennfilmen aus supraleitenden oxyden und verfahren zur bildung von duennfilmen aus supraleitenden oxyden.
DE3887846T Expired - Fee Related DE3887846T2 (de) 1987-06-16 1988-06-15 Verfahren zur bildung von dünnfilmen aus supraleitenden oxyden.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE3887846T Expired - Fee Related DE3887846T2 (de) 1987-06-16 1988-06-15 Verfahren zur bildung von dünnfilmen aus supraleitenden oxyden.

Country Status (5)

Country Link
US (1) US5447909A (de)
EP (2) EP0319585B1 (de)
JP (2) JP2786200B2 (de)
DE (2) DE3880816T2 (de)
WO (2) WO1988010323A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE112512T1 (de) * 1987-12-17 1994-10-15 Univ Colorado Foundation Chemischer dampf-niederschlag von gemischten oxidfilmen.
JP2575443B2 (ja) * 1988-02-04 1997-01-22 株式会社フジクラ 酸化物系超電導線材の製造方法
JPH0255219A (ja) * 1988-08-18 1990-02-23 Mitsubishi Metal Corp 超伝導体薄膜の製造方法
US5466084A (en) * 1994-06-16 1995-11-14 Dana Corporation Dust boot retainer ring
US5876503A (en) * 1996-11-27 1999-03-02 Advanced Technology Materials, Inc. Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
KR100464810B1 (ko) * 2001-06-30 2005-01-05 한국화학연구원 유기 알칼리토금속 착화합물
US8383525B2 (en) 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
US10233541B2 (en) * 2012-06-29 2019-03-19 Applied Materials, Inc. Deposition of films containing alkaline earth metals
EP3583632A4 (de) * 2017-02-14 2021-04-21 California Institute of Technology Hochtemperatursupraleitende materialien

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3824082A (en) * 1972-07-03 1974-07-16 Rca Corp Process for preparing superconducting niobium-gallium alloy
US3894164A (en) * 1973-03-15 1975-07-08 Rca Corp Chemical vapor deposition of luminescent films
JPS57118002A (en) * 1980-12-29 1982-07-22 Kiichiro Kamata Manufacture of oxide by chemical vapor phase deposition method
EP0055459A1 (de) * 1980-12-29 1982-07-07 Rikuun Electric co. Verfahren zur Herstellung von Oxiden durch chemische Dampf-Abscheidung (CVD)
US4501602A (en) 1982-09-15 1985-02-26 Corning Glass Works Process for making sintered glasses and ceramics
JPS6337939A (ja) * 1986-07-31 1988-02-18 大日本印刷株式会社 絵柄と同調するエンボスを有する熱可塑性樹脂成形体の製造方法
JPS62258922A (ja) * 1986-05-06 1987-11-11 Babcock Hitachi Kk ス−トブロワ制御装置
JPS63139750A (ja) * 1986-12-01 1988-06-11 Kanai Hiroyuki ドツトプリンタ用印字ワイヤ
JPS63139751A (ja) * 1986-12-02 1988-06-11 Alps Electric Co Ltd 印刷システムにおける印刷方法
JPS63225528A (ja) * 1987-03-13 1988-09-20 Toa Nenryo Kogyo Kk 超伝導性複合酸化物の製造方法
JPH01212220A (ja) * 1987-10-09 1989-08-25 Fujitsu Ltd 超伝導材料の気相成長方法
JPH01104774A (ja) * 1987-10-14 1989-04-21 Matsushita Electric Ind Co Ltd 酸化物超伝導体薄膜の製造方法
US5089466A (en) * 1987-12-17 1992-02-18 The University Of Colorado Foundation, Inc. Stable mixed metal superconductive oxides containing nitrogen
JPH01212218A (ja) * 1988-02-19 1989-08-25 Sumitomo Metal Ind Ltd 超電導酸化物薄膜の製造方法
JPH01308809A (ja) * 1988-06-06 1989-12-13 Mitsubishi Metal Corp 膜状超電導体の製造方法
JPH01308802A (ja) * 1988-06-06 1989-12-13 Mitsubishi Metal Corp 膜状超電導体の製造方法及びその装置
US4970093A (en) * 1990-04-12 1990-11-13 University Of Colorado Foundation Chemical deposition methods using supercritical fluid solutions

Also Published As

Publication number Publication date
JP2818751B2 (ja) 1998-10-30
EP0325659B1 (de) 1993-05-05
JP2786200B2 (ja) 1998-08-13
US5447909A (en) 1995-09-05
DE3880816D1 (de) 1993-06-09
EP0319585A1 (de) 1989-06-14
EP0325659A4 (de) 1989-09-19
DE3887846T2 (de) 1994-05-19
WO1988010323A1 (en) 1988-12-29
EP0325659A1 (de) 1989-08-02
WO1988010499A1 (en) 1988-12-29
EP0319585A4 (de) 1989-09-19
EP0319585B1 (de) 1994-02-16
JPH10140354A (ja) 1998-05-26
DE3887846D1 (de) 1994-03-24
JPH0193405A (ja) 1989-04-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee