JPS57118002A - Manufacture of oxide by chemical vapor phase deposition method - Google Patents

Manufacture of oxide by chemical vapor phase deposition method

Info

Publication number
JPS57118002A
JPS57118002A JP55189561A JP18956180A JPS57118002A JP S57118002 A JPS57118002 A JP S57118002A JP 55189561 A JP55189561 A JP 55189561A JP 18956180 A JP18956180 A JP 18956180A JP S57118002 A JPS57118002 A JP S57118002A
Authority
JP
Japan
Prior art keywords
metallic
chemical vapor
deposition method
vapor phase
phase deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55189561A
Other languages
Japanese (ja)
Inventor
Kiichiro Kamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP55189561A priority Critical patent/JPS57118002A/en
Priority to EP81110680A priority patent/EP0055459A1/en
Publication of JPS57118002A publication Critical patent/JPS57118002A/en
Pending legal-status Critical Current

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compounds Of Iron (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To form a metallic oxide by a chemical vapor phase deposition method at a relatively low temp. such as about 350W800°C by using a β-diketone metallic complex as a metallic compound as starting material and steam as an oxidizing gas.
CONSTITUTION: A β-diketone metallic complex represented by the formula (where M is a metal; (n) is the valence of the metal: and each of R and R' is CH3, CF3, C4H7, C4H3S or C4H3O) is used. For example, an inert gas such as nitrogen contg. aluminum acetylacetone[Al(C5H7O2)3]is fed into the inner tube of a doubleply tube type nozzle, and an inert gas contg. an equiv. or more of oxygen necessary for the oxidation of the metallic element in said metallic complex is fed into the outer tube of the nozzle. They are mixed, and the gaseous mixture is sprayed on a substrate such as an Si plate heated to about 350°C to form an Al2O3 film. By passing said gaseous mixture through a heated tubular furnace, fine Al2O3 powder can be obtd.
COPYRIGHT: (C)1982,JPO&Japio
JP55189561A 1980-12-29 1980-12-29 Manufacture of oxide by chemical vapor phase deposition method Pending JPS57118002A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55189561A JPS57118002A (en) 1980-12-29 1980-12-29 Manufacture of oxide by chemical vapor phase deposition method
EP81110680A EP0055459A1 (en) 1980-12-29 1981-12-22 Process for producing oxides using chemical vapour deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55189561A JPS57118002A (en) 1980-12-29 1980-12-29 Manufacture of oxide by chemical vapor phase deposition method

Publications (1)

Publication Number Publication Date
JPS57118002A true JPS57118002A (en) 1982-07-22

Family

ID=16243384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55189561A Pending JPS57118002A (en) 1980-12-29 1980-12-29 Manufacture of oxide by chemical vapor phase deposition method

Country Status (1)

Country Link
JP (1) JPS57118002A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107904A (en) * 1982-12-09 1984-06-22 Nippon Soda Co Ltd Manufacture of fine particle of metallic oxide
JPS6217099A (en) * 1985-07-16 1987-01-26 Kokusai Denshin Denwa Co Ltd <Kdd> Production of bismuth-containing oxide single crystal
JPS6325207A (en) * 1986-06-03 1988-02-02 モ−トン　サイオコ−ル，インコ−ポレイテイド Manufacture of metallic oxide having no halide and metallic oxide
JPH0193405A (en) * 1987-06-16 1989-04-12 Kawasaki Steel Corp Complex compound for forming oxide superconductor thin film and method for forming said thin film
JPH0337101A (en) * 1989-07-03 1991-02-18 Chiyoudendou Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai Production of oxide superconductor by mocvd method
WO2001073170A1 (en) * 2000-03-27 2001-10-04 Tohoku Techno Arch Co., Ltd. Zinc oxide semiconductor material
US6589362B2 (en) 2001-07-19 2003-07-08 Tohoku Techno Arch Co., Ltd. Zinc oxide semiconductor member formed on silicon substrate

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107904A (en) * 1982-12-09 1984-06-22 Nippon Soda Co Ltd Manufacture of fine particle of metallic oxide
JPS6217099A (en) * 1985-07-16 1987-01-26 Kokusai Denshin Denwa Co Ltd <Kdd> Production of bismuth-containing oxide single crystal
JPH0429639B2 (en) * 1985-07-16 1992-05-19
JPS6325207A (en) * 1986-06-03 1988-02-02 モ−トン　サイオコ−ル，インコ−ポレイテイド Manufacture of metallic oxide having no halide and metallic oxide
JPH0193405A (en) * 1987-06-16 1989-04-12 Kawasaki Steel Corp Complex compound for forming oxide superconductor thin film and method for forming said thin film
JPH0337101A (en) * 1989-07-03 1991-02-18 Chiyoudendou Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai Production of oxide superconductor by mocvd method
WO2001073170A1 (en) * 2000-03-27 2001-10-04 Tohoku Techno Arch Co., Ltd. Zinc oxide semiconductor material
US6936188B1 (en) 2000-03-27 2005-08-30 Tohoku Techno Arch Co., Ltd. Zinc oxide semiconductor material
US6589362B2 (en) 2001-07-19 2003-07-08 Tohoku Techno Arch Co., Ltd. Zinc oxide semiconductor member formed on silicon substrate

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