DE3878884T2 - Josephson-einrichtung, bestehend aus einer josephson-uebergangsstruktur, welche fuer einen oxidsupraleiter geeignet ist. - Google Patents
Josephson-einrichtung, bestehend aus einer josephson-uebergangsstruktur, welche fuer einen oxidsupraleiter geeignet ist.Info
- Publication number
- DE3878884T2 DE3878884T2 DE8888121155T DE3878884T DE3878884T2 DE 3878884 T2 DE3878884 T2 DE 3878884T2 DE 8888121155 T DE8888121155 T DE 8888121155T DE 3878884 T DE3878884 T DE 3878884T DE 3878884 T2 DE3878884 T2 DE 3878884T2
- Authority
- DE
- Germany
- Prior art keywords
- crystal
- josephson
- film
- region
- josephson device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 claims description 88
- 239000000758 substrate Substances 0.000 claims description 42
- 239000002887 superconductor Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 16
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 5
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 61
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 16
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical class [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 description 9
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 9
- 239000000395 magnesium oxide Substances 0.000 description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000238366 Cephalopoda Species 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 description 1
- 229910003097 YBa2Cu3O7−δ Inorganic materials 0.000 description 1
- IQAKAOAPBMJSGJ-UHFFFAOYSA-N [Cu].[Y].[Ba] Chemical compound [Cu].[Y].[Ba] IQAKAOAPBMJSGJ-UHFFFAOYSA-N 0.000 description 1
- KJNGJIPPQOFCSK-UHFFFAOYSA-N [H][Sr][H] Chemical compound [H][Sr][H] KJNGJIPPQOFCSK-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- -1 gold ions Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
- H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
- H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62320516A JPH01161881A (ja) | 1987-12-18 | 1987-12-18 | ジョセフソン素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3878884D1 DE3878884D1 (de) | 1993-04-08 |
| DE3878884T2 true DE3878884T2 (de) | 1993-06-17 |
Family
ID=18122318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8888121155T Expired - Fee Related DE3878884T2 (de) | 1987-12-18 | 1988-12-16 | Josephson-einrichtung, bestehend aus einer josephson-uebergangsstruktur, welche fuer einen oxidsupraleiter geeignet ist. |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0325765B1 (OSRAM) |
| JP (1) | JPH01161881A (OSRAM) |
| DE (1) | DE3878884T2 (OSRAM) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5162298A (en) * | 1988-02-16 | 1992-11-10 | International Business Machines Corporation | Grain boundary junction devices using high tc superconductors |
| JPH01217980A (ja) * | 1988-02-26 | 1989-08-31 | Nippon Cement Co Ltd | ブリッジ型粒界ジョセフソン素子 |
| US5077266A (en) * | 1988-09-14 | 1991-12-31 | Hitachi, Ltd. | Method of forming weak-link josephson junction, and superconducting device employing the junction |
| JP3020524B2 (ja) * | 1988-11-28 | 2000-03-15 | 株式会社日立製作所 | 酸化物超電導素子 |
| US5256897A (en) * | 1988-11-28 | 1993-10-26 | Hitachi, Ltd. | Oxide superconducting device |
| EP0372951B1 (en) * | 1988-12-09 | 1996-08-14 | Canon Kabushiki Kaisha | Superconductive electromagnetic wave mixer, and apparatus incorporating same |
| US5134117A (en) * | 1991-01-22 | 1992-07-28 | Biomagnetic Technologies, Inc. | High tc microbridge superconductor device utilizing stepped edge-to-edge sns junction |
| US5157466A (en) * | 1991-03-19 | 1992-10-20 | Conductus, Inc. | Grain boundary junctions in high temperature superconductor films |
| US5376624A (en) * | 1991-10-10 | 1994-12-27 | The United States Of America As Represented By The Secretary Of The Navy | Josephson break junction thin film device |
| JPH05148095A (ja) * | 1991-11-30 | 1993-06-15 | Sumitomo Electric Ind Ltd | 基板成膜面に段差を形成する方法 |
| JP3149996B2 (ja) * | 1992-11-10 | 2001-03-26 | 財団法人国際超電導産業技術研究センター | ジョセフソン結合の作製法 |
| DE4323040A1 (de) * | 1993-07-09 | 1995-01-12 | Siemens Ag | Josephson-Sensoreinrichtung mit supraleitenden Teilen aus metalloxidischem Supraleitermaterial |
| JP2963614B2 (ja) * | 1994-04-01 | 1999-10-18 | 財団法人国際超電導産業技術研究センター | 酸化物超電導体接合素子の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4290843A (en) * | 1980-02-19 | 1981-09-22 | Texas Instruments Incorporated | Epitaxial growth of magnetic memory film on implanted substrate |
-
1987
- 1987-12-18 JP JP62320516A patent/JPH01161881A/ja active Granted
-
1988
- 1988-12-16 EP EP88121155A patent/EP0325765B1/en not_active Expired - Lifetime
- 1988-12-16 DE DE8888121155T patent/DE3878884T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0325765A1 (en) | 1989-08-02 |
| JPH0577347B2 (OSRAM) | 1993-10-26 |
| JPH01161881A (ja) | 1989-06-26 |
| DE3878884D1 (de) | 1993-04-08 |
| EP0325765B1 (en) | 1993-03-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |