DE3874422D1 - Feldeffekttransistor mit kurzer kanallaenge und verfahren zu dessen herstellung. - Google Patents

Feldeffekttransistor mit kurzer kanallaenge und verfahren zu dessen herstellung.

Info

Publication number
DE3874422D1
DE3874422D1 DE8888109529T DE3874422T DE3874422D1 DE 3874422 D1 DE3874422 D1 DE 3874422D1 DE 8888109529 T DE8888109529 T DE 8888109529T DE 3874422 T DE3874422 T DE 3874422T DE 3874422 D1 DE3874422 D1 DE 3874422D1
Authority
DE
Germany
Prior art keywords
production
field effect
effect transistor
channel length
short channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888109529T
Other languages
English (en)
Other versions
DE3874422T2 (de
Inventor
Toshiyuki Ishijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3874422D1 publication Critical patent/DE3874422D1/de
Application granted granted Critical
Publication of DE3874422T2 publication Critical patent/DE3874422T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE8888109529T 1987-06-17 1988-06-15 Feldeffekttransistor mit kurzer kanallaenge und verfahren zu dessen herstellung. Expired - Fee Related DE3874422T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62151837A JPS63314870A (ja) 1987-06-17 1987-06-17 絶縁ゲ−ト電界効果トランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
DE3874422D1 true DE3874422D1 (de) 1992-10-15
DE3874422T2 DE3874422T2 (de) 1993-04-08

Family

ID=15527382

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888109529T Expired - Fee Related DE3874422T2 (de) 1987-06-17 1988-06-15 Feldeffekttransistor mit kurzer kanallaenge und verfahren zu dessen herstellung.

Country Status (4)

Country Link
US (1) US4876581A (de)
EP (1) EP0295643B1 (de)
JP (1) JPS63314870A (de)
DE (1) DE3874422T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525536A (en) * 1991-12-26 1996-06-11 Rohm Co., Ltd. Method for producing SOI substrate and semiconductor device using the same
US5308997A (en) * 1992-06-22 1994-05-03 Motorola, Inc. Self-aligned thin film transistor
US6716728B2 (en) 1999-08-03 2004-04-06 Bae Systems Information And Electronic Systems Integration, Inc. Radiation hardened silicon-on-insulator (SOI) transistor having a body contact
US6399989B1 (en) 1999-08-03 2002-06-04 Bae Systems Information And Electronic Systems Integration Inc. Radiation hardened silicon-on-insulator (SOI) transistor having a body contact

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0077737A3 (de) * 1981-10-19 1984-11-07 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Feldeffekttransistor mit kleiner Kapazität
JPH0682837B2 (ja) * 1982-09-16 1994-10-19 財団法人半導体研究振興会 半導体集積回路
JPS59175161A (ja) * 1983-03-25 1984-10-03 Hitachi Ltd 絶縁ゲ−ト半導体装置とその製造方法
FR2561822B1 (fr) * 1984-03-23 1986-06-27 Thomson Csf Dispositif semi-conducteur a effet de champ a faible tension de dechet

Also Published As

Publication number Publication date
EP0295643A2 (de) 1988-12-21
EP0295643A3 (en) 1989-08-23
EP0295643B1 (de) 1992-09-09
DE3874422T2 (de) 1993-04-08
JPH0583196B2 (de) 1993-11-25
JPS63314870A (ja) 1988-12-22
US4876581A (en) 1989-10-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee