DE3871706T2 - Konturenmessmethode. - Google Patents

Konturenmessmethode.

Info

Publication number
DE3871706T2
DE3871706T2 DE8888117111T DE3871706T DE3871706T2 DE 3871706 T2 DE3871706 T2 DE 3871706T2 DE 8888117111 T DE8888117111 T DE 8888117111T DE 3871706 T DE3871706 T DE 3871706T DE 3871706 T2 DE3871706 T2 DE 3871706T2
Authority
DE
Germany
Prior art keywords
measurement method
contour measurement
contour
measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888117111T
Other languages
English (en)
Other versions
DE3871706D1 (de
Inventor
Fumio Komatsu
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3871706D1 publication Critical patent/DE3871706D1/de
Publication of DE3871706T2 publication Critical patent/DE3871706T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
DE8888117111T 1987-10-14 1988-10-14 Konturenmessmethode. Expired - Fee Related DE3871706T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62259207A JPH0663758B2 (ja) 1987-10-14 1987-10-14 パターンの測定方法

Publications (2)

Publication Number Publication Date
DE3871706D1 DE3871706D1 (de) 1992-07-09
DE3871706T2 true DE3871706T2 (de) 1993-01-21

Family

ID=17330878

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888117111T Expired - Fee Related DE3871706T2 (de) 1987-10-14 1988-10-14 Konturenmessmethode.

Country Status (5)

Country Link
US (1) US4910398A (de)
EP (1) EP0312083B1 (de)
JP (1) JPH0663758B2 (de)
KR (1) KR920002371B1 (de)
DE (1) DE3871706T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5600734A (en) * 1991-10-04 1997-02-04 Fujitsu Limited Electron beam tester
JP2823450B2 (ja) * 1992-11-19 1998-11-11 株式会社東芝 回路パターンの寸法測定方法
JP3184675B2 (ja) * 1993-09-22 2001-07-09 株式会社東芝 微細パターンの測定装置
US5576542A (en) * 1993-12-08 1996-11-19 Kabushiki Kaisha Toshiba Substrate cross-section observing apparatus
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US5798529A (en) * 1996-05-28 1998-08-25 International Business Machines Corporation Focused ion beam metrology
US6157032A (en) * 1998-11-04 2000-12-05 Schlumberger Technologies, Inc. Sample shape determination by measurement of surface slope with a scanning electron microscope
JP3916464B2 (ja) * 1999-12-14 2007-05-16 アプライド マテリアルズ インコーポレイテッド 試料検査のための方法
WO2002023173A2 (en) * 2000-09-15 2002-03-21 Infineon Technologies North America Corp. Method for measuring and characterizing parallel features in images
US6445194B1 (en) 2001-02-16 2002-09-03 International Business Machines Corporation Structure and method for electrical method of determining film conformality
JP4215454B2 (ja) 2001-07-12 2009-01-28 株式会社日立製作所 試料の凹凸判定方法、及び荷電粒子線装置
JP4493495B2 (ja) * 2002-07-11 2010-06-30 アプライド マテリアルズ インコーポレイテッド サブミクロン断面を有する構造素子の断面特徴を決定するためのシステム及び方法
US7528614B2 (en) 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
JP4695857B2 (ja) * 2004-08-25 2011-06-08 株式会社日立ハイテクノロジーズ 半導体検査方法および半導体検査装置
DK2156370T3 (da) * 2007-05-14 2012-01-23 Historx Inc Kompartmentadskillelse ved pixelkarakterisering under anvendelse af billeddata-clustering
EP2162728B1 (de) * 2007-06-15 2016-07-27 Novartis AG Mikroskopisches system und verfahren zur erfassung von standardisierten daten
CA2604317C (en) * 2007-08-06 2017-02-28 Historx, Inc. Methods and system for validating sample images for quantitative immunoassays
CA2596204C (en) * 2007-08-07 2019-02-26 Historx, Inc. Method and system for determining an optimal dilution of a reagent
WO2009029810A1 (en) * 2007-08-31 2009-03-05 Historx, Inc. Automatic exposure time selection for imaging tissue
ES2573945T3 (es) * 2008-09-16 2016-06-13 Novartis Ag Cuantificación reproducible de expresión de biomarcadores
US8992446B2 (en) * 2009-06-21 2015-03-31 Holland Bloorview Kids Rehabilitation Hospital Procedure for denoising dual-axis swallowing accelerometry signals
KR101957007B1 (ko) * 2014-06-30 2019-03-11 가부시키가이샤 히다치 하이테크놀로지즈 패턴 측정 방법 및 패턴 측정 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876879A (en) * 1973-11-09 1975-04-08 Calspan Corp Method and apparatus for determining surface characteristics incorporating a scanning electron microscope
JPS5434673A (en) * 1977-08-23 1979-03-14 Hitachi Ltd Micro-distance measuring device for scan-type electronic microscope
DD206722A3 (de) * 1981-11-02 1984-02-01 Rainer Plontke Verfahren und anordnung zur strukturkantenbestimmung in elektronenstrahlgeraeten
EP0108497B1 (de) * 1982-10-08 1987-05-13 National Research Development Corporation Mit Strahlung arbeitendes Sondensystem
JPS6161002A (ja) * 1984-09-03 1986-03-28 Hitachi Ltd 断面形状自動測定方式
JPS61128114A (ja) * 1984-11-27 1986-06-16 Toshiba Corp パタ−ンの表面形状評価方法
JPH0621784B2 (ja) * 1984-12-10 1994-03-23 株式会社日立製作所 パタ−ン形状評価装置

Also Published As

Publication number Publication date
EP0312083A2 (de) 1989-04-19
JPH01101408A (ja) 1989-04-19
EP0312083A3 (en) 1990-08-08
KR920002371B1 (ko) 1992-03-23
US4910398A (en) 1990-03-20
JPH0663758B2 (ja) 1994-08-22
EP0312083B1 (de) 1992-06-03
DE3871706D1 (de) 1992-07-09
KR890007053A (ko) 1989-06-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee