DE3856492T2 - Ein Elektronenemissionselement enthaltende Anzeigevorrichtung - Google Patents

Ein Elektronenemissionselement enthaltende Anzeigevorrichtung

Info

Publication number
DE3856492T2
DE3856492T2 DE19883856492 DE3856492T DE3856492T2 DE 3856492 T2 DE3856492 T2 DE 3856492T2 DE 19883856492 DE19883856492 DE 19883856492 DE 3856492 T DE3856492 T DE 3856492T DE 3856492 T2 DE3856492 T2 DE 3856492T2
Authority
DE
Germany
Prior art keywords
electron emission
electrode
single crystal
deposition
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19883856492
Other languages
German (de)
English (en)
Other versions
DE3856492D1 (de
Inventor
Takeshi Ichikawa
Tetsuya Kaneko
Masahiko Okunuki
Isamu Shimoda
Akira Suzuki
Toshihiko Takeda
Takeo Tsukamoto
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2487287A external-priority patent/JP2612564B2/ja
Priority claimed from JP2487387A external-priority patent/JP2612565B2/ja
Priority claimed from JP3807687A external-priority patent/JP2612567B2/ja
Priority claimed from JP3807587A external-priority patent/JP2609602B2/ja
Priority claimed from JP4781687A external-priority patent/JP2609604B2/ja
Priority claimed from JP5034487A external-priority patent/JP2561263B2/ja
Priority claimed from JP5211387A external-priority patent/JP2612569B2/ja
Priority claimed from JP6789287A external-priority patent/JP2713569B2/ja
Priority claimed from JP7046787A external-priority patent/JP2616918B2/ja
Priority claimed from JP7360187A external-priority patent/JP2612571B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3856492D1 publication Critical patent/DE3856492D1/de
Application granted granted Critical
Publication of DE3856492T2 publication Critical patent/DE3856492T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE19883856492 1987-02-06 1988-02-04 Ein Elektronenemissionselement enthaltende Anzeigevorrichtung Expired - Fee Related DE3856492T2 (de)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2487287A JP2612564B2 (ja) 1987-02-06 1987-02-06 マルチ型電子放出素子及びその製造方法
JP2487387A JP2612565B2 (ja) 1987-02-06 1987-02-06 電子放出素子及びその製造方法
JP3807587A JP2609602B2 (ja) 1987-02-23 1987-02-23 電子放出素子及びその製造方法
JP3807687A JP2612567B2 (ja) 1987-02-23 1987-02-23 電子放出素子
JP4781687A JP2609604B2 (ja) 1987-03-04 1987-03-04 電子放出方法及び電子放出装置
JP5034487A JP2561263B2 (ja) 1987-03-06 1987-03-06 電子放出素子の製造方法
JP5211387A JP2612569B2 (ja) 1987-03-09 1987-03-09 電子放出素子
JP6789287A JP2713569B2 (ja) 1987-03-24 1987-03-24 電子放出装置
JP7046787A JP2616918B2 (ja) 1987-03-26 1987-03-26 表示装置
JP7360187A JP2612571B2 (ja) 1987-03-27 1987-03-27 電子放出素子

Publications (2)

Publication Number Publication Date
DE3856492D1 DE3856492D1 (de) 2001-10-25
DE3856492T2 true DE3856492T2 (de) 2002-10-31

Family

ID=27579773

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19883856492 Expired - Fee Related DE3856492T2 (de) 1987-02-06 1988-02-04 Ein Elektronenemissionselement enthaltende Anzeigevorrichtung
DE19883855482 Expired - Fee Related DE3855482T2 (de) 1987-02-06 1988-02-04 Elektronen emittierendes Element und dessen Herstellungsverfahren

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19883855482 Expired - Fee Related DE3855482T2 (de) 1987-02-06 1988-02-04 Elektronen emittierendes Element und dessen Herstellungsverfahren

Country Status (3)

Country Link
EP (2) EP0713241B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (2) AU1134388A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE3856492T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0365630B1 (fr) * 1988-03-25 1994-03-02 Thomson-Csf Procede de fabrication de sources d'electrons du type a emission de champ, et son application a la realisation de reseaux d'emetteurs
FR2644287B1 (fr) * 1989-03-10 1996-01-26 Thomson Csf Procede de realisation de sources d'electrons du type a emission de champ et dispositifs realises a partir desdites sources
FR2637126B1 (fr) * 1988-09-23 1992-05-07 Thomson Csf Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication
DE69033677T2 (de) * 1989-09-04 2001-05-23 Canon K.K., Tokio/Tokyo Elektronenemissionselement- und Herstellungsverfahren desselben
FR2658839B1 (fr) * 1990-02-23 1997-06-20 Thomson Csf Procede de croissance controlee de cristaux aciculaires et application a la realisation de microcathodes a pointes.
JP2918637B2 (ja) * 1990-06-27 1999-07-12 三菱電機株式会社 微小真空管及びその製造方法
US5332627A (en) * 1990-10-30 1994-07-26 Sony Corporation Field emission type emitter and a method of manufacturing thereof
FR2669465B1 (fr) * 1990-11-16 1996-07-12 Thomson Rech Source d'electrons et procede de realisation.
US5283501A (en) * 1991-07-18 1994-02-01 Motorola, Inc. Electron device employing a low/negative electron affinity electron source
US5129850A (en) * 1991-08-20 1992-07-14 Motorola, Inc. Method of making a molded field emission electron emitter employing a diamond coating
US5141460A (en) * 1991-08-20 1992-08-25 Jaskie James E Method of making a field emission electron source employing a diamond coating
US5619092A (en) * 1993-02-01 1997-04-08 Motorola Enhanced electron emitter
DE69404000T2 (de) * 1993-05-05 1998-01-29 At & T Corp Flache Bildwiedergabeanordnung und Herstellungsverfahren
US5514937A (en) * 1994-01-24 1996-05-07 Motorola Apparatus and method for compensating electron emission in a field emission device
JP3251466B2 (ja) 1994-06-13 2002-01-28 キヤノン株式会社 複数の冷陰極素子を備えた電子線発生装置、並びにその駆動方法、並びにそれを応用した画像形成装置
JPH0850850A (ja) * 1994-08-09 1996-02-20 Agency Of Ind Science & Technol 電界放出型電子放出素子およびその製造方法
JP3311246B2 (ja) 1995-08-23 2002-08-05 キヤノン株式会社 電子発生装置、画像表示装置およびそれらの駆動回路、駆動方法
US5994834A (en) * 1997-08-22 1999-11-30 Micron Technology, Inc. Conductive address structure for field emission displays
RU2273073C2 (ru) * 1998-04-30 2006-03-27 ООО "Научно-производственное предприятие "Кристаллы и Технологии" Стабилизированные и управляемые источники электронов, матричные системы источников электронов и способ их изготовления
US20060232191A1 (en) * 2005-04-15 2006-10-19 Samsung Electronics Co., Ltd. Gate-controlled electron-emitter array panel, active matrix display including the same, and method of manufacturing the panel
US8866068B2 (en) 2012-12-27 2014-10-21 Schlumberger Technology Corporation Ion source with cathode having an array of nano-sized projections

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
US4168213A (en) * 1976-04-29 1979-09-18 U.S. Philips Corporation Field emission device and method of forming same
JPS5679828A (en) * 1979-12-05 1981-06-30 Toshiba Corp Electron gun
DE3133786A1 (de) * 1981-08-26 1983-03-10 Battelle-Institut E.V., 6000 Frankfurt Anordnung zur erzeugung von feldemission und verfahren zu ihrer herstellung
NL8400297A (nl) * 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
FR2568394B1 (fr) * 1984-07-27 1988-02-12 Commissariat Energie Atomique Dispositif de visualisation par cathodoluminescence excitee par emission de champ

Also Published As

Publication number Publication date
DE3855482T2 (de) 1997-03-20
EP0278405A2 (en) 1988-08-17
AU8774991A (en) 1992-01-09
EP0713241A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-06-05
AU1134388A (en) 1988-08-11
EP0713241B1 (en) 2001-09-19
DE3856492D1 (de) 2001-10-25
EP0278405A3 (en) 1990-05-16
EP0713241A2 (en) 1996-05-22
AU631327B2 (en) 1992-11-19
EP0278405B1 (en) 1996-08-21
DE3855482D1 (de) 1996-09-26

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee