DE3851029D1 - Verfahren um eine mit Ionen implantierte organische Harzschicht während der Herstellung von Halbleiterbauelemente zu entfernen. - Google Patents

Verfahren um eine mit Ionen implantierte organische Harzschicht während der Herstellung von Halbleiterbauelemente zu entfernen.

Info

Publication number
DE3851029D1
DE3851029D1 DE3851029T DE3851029T DE3851029D1 DE 3851029 D1 DE3851029 D1 DE 3851029D1 DE 3851029 T DE3851029 T DE 3851029T DE 3851029 T DE3851029 T DE 3851029T DE 3851029 D1 DE3851029 D1 DE 3851029D1
Authority
DE
Germany
Prior art keywords
ion
manufacture
resin layer
semiconductor devices
organic resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3851029T
Other languages
English (en)
Other versions
DE3851029T2 (de
Inventor
Shuzo Fujimura
Junichi Konno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3851029D1 publication Critical patent/DE3851029D1/de
Application granted granted Critical
Publication of DE3851029T2 publication Critical patent/DE3851029T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/083—Ion implantation, general

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE3851029T 1987-10-15 1988-09-19 Verfahren um eine mit Ionen implantierte organische Harzschicht während der Herstellung von Halbleiterbauelemente zu entfernen. Expired - Fee Related DE3851029T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62259998A JPH0626201B2 (ja) 1987-10-15 1987-10-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE3851029D1 true DE3851029D1 (de) 1994-09-15
DE3851029T2 DE3851029T2 (de) 1994-12-01

Family

ID=17341874

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3851029T Expired - Fee Related DE3851029T2 (de) 1987-10-15 1988-09-19 Verfahren um eine mit Ionen implantierte organische Harzschicht während der Herstellung von Halbleiterbauelemente zu entfernen.

Country Status (5)

Country Link
US (1) US4861732A (de)
EP (1) EP0311817B1 (de)
JP (1) JPH0626201B2 (de)
KR (1) KR920003310B1 (de)
DE (1) DE3851029T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4987008A (en) * 1985-07-02 1991-01-22 Semiconductor Energy Laboratory Co., Ltd. Thin film formation method
JP2541851B2 (ja) * 1989-03-10 1996-10-09 富士通株式会社 有機物の剥離方法
JP3152430B2 (ja) * 1990-10-09 2001-04-03 クロリンエンジニアズ株式会社 有機物被膜の除去方法
US5240878A (en) * 1991-04-26 1993-08-31 International Business Machines Corporation Method for forming patterned films on a substrate
JPH04352157A (ja) * 1991-05-30 1992-12-07 Toyota Autom Loom Works Ltd レジスト除去方法
US5209815A (en) * 1991-06-06 1993-05-11 International Business Machines Corporation Method for forming patterned films on a substrate
JP3391410B2 (ja) * 1993-09-17 2003-03-31 富士通株式会社 レジストマスクの除去方法
JP4417439B2 (ja) * 1994-06-29 2010-02-17 フリースケール セミコンダクター インコーポレイテッド エッチング・ストップ層を利用する半導体装置構造とその方法
TW460748B (en) * 1998-05-26 2001-10-21 Matsushita Electronics Corp Capacitor and method for fabricating the same
US20020132491A1 (en) * 1998-12-31 2002-09-19 John E. Lang Method of removing photoresist material with dimethyl sulfoxide
US7270724B2 (en) 2000-12-13 2007-09-18 Uvtech Systems, Inc. Scanning plasma reactor
US6773683B2 (en) * 2001-01-08 2004-08-10 Uvtech Systems, Inc. Photocatalytic reactor system for treating flue effluents
AU2003270735A1 (en) * 2002-09-18 2004-04-08 Mattson Technology, Inc. System and method for removing material
US7334918B2 (en) * 2003-05-07 2008-02-26 Bayco Products, Ltd. LED lighting array for a portable task light
FR2856514A1 (fr) * 2003-06-20 2004-12-24 St Microelectronics Sa Procede de formation selective de siliciure sur une plaque de materiau semi-conducteur
US7799685B2 (en) * 2003-10-13 2010-09-21 Mattson Technology, Inc. System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing
US7361605B2 (en) * 2004-01-20 2008-04-22 Mattson Technology, Inc. System and method for removal of photoresist and residues following contact etch with a stop layer present
US20110061679A1 (en) * 2004-06-17 2011-03-17 Uvtech Systems, Inc. Photoreactive Removal of Ion Implanted Resist
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US20070054492A1 (en) * 2004-06-17 2007-03-08 Elliott David J Photoreactive removal of ion implanted resist
KR100801150B1 (ko) * 2006-06-26 2008-02-11 (주)엠아이반도체 패키지된 반도체 및 전자부품의 몰딩수지 제거장치 및몰딩수지 제거방법
DE102006062035B4 (de) * 2006-12-29 2013-02-07 Advanced Micro Devices, Inc. Verfahren zum Entfernen von Lackmaterial nach einer Implantation mit hoher Dosis in einem Halbleiterbauelement
CN102968003B (zh) * 2012-11-29 2015-03-18 上海华力微电子有限公司 光刻胶的去除方法
CN107885048A (zh) * 2017-09-19 2018-04-06 合肥惠科金扬科技有限公司 一种tft‑lcd屏制造过程中光刻胶的去除方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4115120A (en) * 1977-09-29 1978-09-19 International Business Machines Corporation Method of forming thin film patterns by differential pre-baking of resist
JPS5598828A (en) * 1979-01-24 1980-07-28 Hitachi Ltd Removing method of thin organic film
US4353778A (en) * 1981-09-04 1982-10-12 International Business Machines Corporation Method of etching polyimide
JPS58123726A (ja) * 1982-01-18 1983-07-23 Toshiba Corp レジストの灰化方法
US4428796A (en) * 1982-08-02 1984-01-31 Fairchild Camera And Instrument Corporation Adhesion bond-breaking of lift-off regions on semiconductor structures
US4851691A (en) * 1982-11-19 1989-07-25 Varian Associates, Inc. Method for photoresist pretreatment prior to charged particle beam processing
JPH0622220B2 (ja) * 1984-11-19 1994-03-23 富士通株式会社 レジスト灰化方法
US4679308A (en) * 1984-12-14 1987-07-14 Honeywell Inc. Process for controlling mobile ion contamination in semiconductor devices
JPH101439A (ja) * 1996-06-11 1998-01-06 Mochida Pharmaceut Co Ltd 神経変性疾患治療剤
JPH114742A (ja) * 1997-06-18 1999-01-12 Isoo Kuriki でっぱり付き口縁に開口部付き高台の器

Also Published As

Publication number Publication date
JPH01101633A (ja) 1989-04-19
EP0311817B1 (de) 1994-08-10
US4861732A (en) 1989-08-29
EP0311817A2 (de) 1989-04-19
KR890007372A (ko) 1989-06-19
DE3851029T2 (de) 1994-12-01
JPH0626201B2 (ja) 1994-04-06
KR920003310B1 (ko) 1992-04-27
EP0311817A3 (en) 1990-06-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee