DE3850580D1 - Supraleiteranordnung. - Google Patents

Supraleiteranordnung.

Info

Publication number
DE3850580D1
DE3850580D1 DE3850580T DE3850580T DE3850580D1 DE 3850580 D1 DE3850580 D1 DE 3850580D1 DE 3850580 T DE3850580 T DE 3850580T DE 3850580 T DE3850580 T DE 3850580T DE 3850580 D1 DE3850580 D1 DE 3850580D1
Authority
DE
Germany
Prior art keywords
superconductor arrangement
superconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3850580T
Other languages
English (en)
Other versions
DE3850580T2 (de
Inventor
Toshikazu Nishino
Haruhiro Hasegawa
Ushio Kawabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3850580D1 publication Critical patent/DE3850580D1/de
Publication of DE3850580T2 publication Critical patent/DE3850580T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/83—Element shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
DE3850580T 1987-01-30 1988-01-20 Supraleiteranordnung. Expired - Fee Related DE3850580T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1839387 1987-01-30
JP8880487 1987-04-13

Publications (2)

Publication Number Publication Date
DE3850580D1 true DE3850580D1 (de) 1994-08-18
DE3850580T2 DE3850580T2 (de) 1994-10-27

Family

ID=26355068

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850580T Expired - Fee Related DE3850580T2 (de) 1987-01-30 1988-01-20 Supraleiteranordnung.

Country Status (5)

Country Link
EP (1) EP0276746B1 (de)
JP (1) JP2907830B2 (de)
KR (1) KR910007901B1 (de)
CN (1) CN1018114B (de)
DE (1) DE3850580T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
US5026682A (en) * 1987-04-13 1991-06-25 International Business Machines Corporation Devices using high Tc superconductors
CA1328242C (en) * 1987-05-18 1994-04-05 Nobuhiko Fujita Process for manufacturing a superconductor and a method for producing a superconducting circuit
GB8809548D0 (en) * 1988-04-22 1988-05-25 Somekh R E Epitaxial barrier layers in thin film technology
JP3020524B2 (ja) * 1988-11-28 2000-03-15 株式会社日立製作所 酸化物超電導素子
US5550389A (en) * 1988-11-28 1996-08-27 Hitachi, Ltd. Superconducting device
JP2986819B2 (ja) * 1988-11-28 1999-12-06 株式会社日立製作所 超電導デバイス
US5256897A (en) * 1988-11-28 1993-10-26 Hitachi, Ltd. Oxide superconducting device
JPH0354875A (ja) * 1989-07-24 1991-03-08 Furukawa Electric Co Ltd:The 超電導体回路の形成方法
JPH0368180A (ja) * 1989-08-07 1991-03-25 Nippon Telegr & Teleph Corp <Ntt> 超伝導接合素子
KR930004024B1 (ko) * 1990-04-27 1993-05-19 삼성전기 주식회사 초전도 집적회로소자의 제조방법
DE69114435T2 (de) * 1990-09-27 1996-06-13 Sumitomo Electric Industries Supraleitendes Bauelement und dessen Herstellungsverfahren.
EP0478463B1 (de) * 1990-09-27 1996-05-08 Sumitomo Electric Industries, Ltd. Supraleitendes Bauelement mit extrem dünnem supraleitenden Kanal aus supraleitendem Oxidmaterial
CA2052380C (en) * 1990-09-27 1998-04-14 Takao Nakamura Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
DE69119022T2 (de) * 1990-10-08 1996-10-31 Sumitomo Electric Industries Supraleitende Einrichtung mit ultradünnem Kanal aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung
CA2054795C (en) * 1990-11-01 1996-08-06 Hiroshi Inada Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
EP0534811B1 (de) * 1991-08-28 1996-05-08 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung von supraleitenden Schichten aus supraleitendem Oxyd in denen nicht-supraleitende Gebiete vorkommen und Verfahren zur Herstellung eines Bauelements welches solche Schichten enthält
US5468806A (en) * 1992-04-24 1995-11-21 The Furukawa Electric Co., Ltd. Method of manufacturing an oxide superconductor thin film
JP2809553B2 (ja) * 1992-04-24 1998-10-08 古河電気工業株式会社 酸化物超電導体薄膜の製造方法
EP0576363B1 (de) * 1992-06-24 1998-01-07 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung einer supraleitenden Einrichtung mit einem supraleitenden Kanal aus oxidisch supraleitendem Material
GB9401357D0 (en) * 1994-01-25 1994-03-23 Hitachi Europ Ltd Semiconductor junctions
KR100388497B1 (ko) * 2001-06-01 2003-06-25 한국전자통신연구원 초전도 에피택셜 박막 및 그 제조 방법
EP3164889B1 (de) * 2014-07-02 2023-06-07 University of Copenhagen Ein josephson-übergang mit einem halbleitenden nanodraht und supraleitenden schichten darauf
CN116102951A (zh) * 2022-12-26 2023-05-12 苏州微介面材料科技有限公司 一种抗静电不发火水性环氧涂料

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846198B2 (ja) * 1980-07-25 1983-10-14 日本電信電話株式会社 酸化物超伝導体ジョセフソン素子の製造方法
JPS61206279A (ja) * 1985-03-11 1986-09-12 Hitachi Ltd 超電導素子
JPS6212212A (ja) * 1985-07-10 1987-01-21 Hitachi Ltd 超電導回路
US6638894B1 (en) * 1987-01-09 2003-10-28 Lucent Technologies Inc. Devices and systems based on novel superconducting material

Also Published As

Publication number Publication date
EP0276746A2 (de) 1988-08-03
DE3850580T2 (de) 1994-10-27
KR910007901B1 (ko) 1991-10-04
EP0276746A3 (en) 1989-08-09
JPS6427282A (en) 1989-01-30
KR880009452A (ko) 1988-09-15
CN1018114B (zh) 1992-09-02
EP0276746B1 (de) 1994-07-13
CN88100514A (zh) 1988-08-17
JP2907830B2 (ja) 1999-06-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee