DE3833320C2 - - Google Patents

Info

Publication number
DE3833320C2
DE3833320C2 DE3833320A DE3833320A DE3833320C2 DE 3833320 C2 DE3833320 C2 DE 3833320C2 DE 3833320 A DE3833320 A DE 3833320A DE 3833320 A DE3833320 A DE 3833320A DE 3833320 C2 DE3833320 C2 DE 3833320C2
Authority
DE
Germany
Prior art keywords
gas
substrates
cooling
heads
conveyor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3833320A
Other languages
German (de)
English (en)
Other versions
DE3833320A1 (de
Inventor
Shigeru Harada
Masanori Obata
Eisuke Tanaka
Kenji Itami Hyogo Jp Kishibe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3833320A1 publication Critical patent/DE3833320A1/de
Application granted granted Critical
Publication of DE3833320C2 publication Critical patent/DE3833320C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
DE3833320A 1987-10-02 1988-09-30 Vorrichtung zum chemischen aufdampfen Granted DE3833320A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62250356A JPH0193129A (ja) 1987-10-02 1987-10-02 化学気相成長装置

Publications (2)

Publication Number Publication Date
DE3833320A1 DE3833320A1 (de) 1989-04-20
DE3833320C2 true DE3833320C2 (enExample) 1993-06-17

Family

ID=17206701

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3833320A Granted DE3833320A1 (de) 1987-10-02 1988-09-30 Vorrichtung zum chemischen aufdampfen

Country Status (3)

Country Link
US (1) US4913090A (enExample)
JP (1) JPH0193129A (enExample)
DE (1) DE3833320A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008012931A1 (de) 2008-03-06 2009-09-17 Vtd Vakuumtechnik Dresden Gmbh Verfahren und Vorrichtung zum Kühlen von Substraten

Families Citing this family (45)

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US5252366A (en) * 1990-01-24 1993-10-12 The United States Of America As Represented By The Secretary Of The Air Force Chemical vapor deposition method using an actively cooled effuser to coat a substrate having a heated surface layer
US5273585A (en) * 1990-03-27 1993-12-28 Mazda Motor Corporation Heat-treating apparatus
CA2054050C (en) * 1990-11-16 1998-07-07 Louis K. Bigelow Method and apparatus for making grit and abrasive media
US5578130A (en) * 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
FR2670507B1 (fr) * 1990-12-18 1993-12-31 Propulsion Ste Europeenne Procede d'infiltration chimique en phase vapeur.
US5342660A (en) * 1991-05-10 1994-08-30 Celestech, Inc. Method for plasma jet deposition
US5204144A (en) * 1991-05-10 1993-04-20 Celestech, Inc. Method for plasma deposition on apertured substrates
US5551983A (en) * 1994-11-01 1996-09-03 Celestech, Inc. Method and apparatus for depositing a substance with temperature control
US5679404A (en) * 1995-06-07 1997-10-21 Saint-Gobain/Norton Industrial Ceramics Corporation Method for depositing a substance with temperature control
US6173672B1 (en) 1997-06-06 2001-01-16 Celestech, Inc. Diamond film deposition on substrate arrays
US6406760B1 (en) 1996-06-10 2002-06-18 Celestech, Inc. Diamond film deposition on substrate arrays
US5806319A (en) * 1997-03-13 1998-09-15 Wary; John Method and apparatus for cryogenically cooling a deposition chamber
JP3917237B2 (ja) * 1997-05-20 2007-05-23 東京エレクトロン株式会社 レジスト膜形成方法
US5976258A (en) * 1998-02-05 1999-11-02 Semiconductor Equipment Group, Llc High temperature substrate transfer module
US6623861B2 (en) 2001-04-16 2003-09-23 Battelle Memorial Institute Multilayer plastic substrates
US6413645B1 (en) 2000-04-20 2002-07-02 Battelle Memorial Institute Ultrabarrier substrates
US20090191342A1 (en) * 1999-10-25 2009-07-30 Vitex Systems, Inc. Method for edge sealing barrier films
US6866901B2 (en) 1999-10-25 2005-03-15 Vitex Systems, Inc. Method for edge sealing barrier films
US20100330748A1 (en) * 1999-10-25 2010-12-30 Xi Chu Method of encapsulating an environmentally sensitive device
US7198832B2 (en) * 1999-10-25 2007-04-03 Vitex Systems, Inc. Method for edge sealing barrier films
US20070196682A1 (en) * 1999-10-25 2007-08-23 Visser Robert J Three dimensional multilayer barrier and method of making
US6458416B1 (en) * 2000-07-19 2002-10-01 Micron Technology, Inc. Deposition methods
US7192888B1 (en) 2000-08-21 2007-03-20 Micron Technology, Inc. Low selectivity deposition methods
US7094690B1 (en) 2000-08-31 2006-08-22 Micron Technology, Inc. Deposition methods and apparatuses providing surface activation
US7368014B2 (en) * 2001-08-09 2008-05-06 Micron Technology, Inc. Variable temperature deposition methods
US20090208754A1 (en) * 2001-09-28 2009-08-20 Vitex Systems, Inc. Method for edge sealing barrier films
DE10148669A1 (de) * 2001-10-02 2003-04-17 Bosch Gmbh Robert Elektrische Maschine, insbesondere Startvorrichtung
US6808741B1 (en) * 2001-10-26 2004-10-26 Seagate Technology Llc In-line, pass-by method for vapor lubrication
KR20030078454A (ko) * 2002-03-29 2003-10-08 주식회사 엘지이아이 표면처리장치와 그 방법 및 표면처리된 제품
US8808457B2 (en) * 2002-04-15 2014-08-19 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
US8900366B2 (en) * 2002-04-15 2014-12-02 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
CN100413602C (zh) * 2002-08-19 2008-08-27 乐金电子(天津)电器有限公司 热交换器的表面处理装置和其方法及制品
US7510913B2 (en) * 2003-04-11 2009-03-31 Vitex Systems, Inc. Method of making an encapsulated plasma sensitive device
US7648925B2 (en) * 2003-04-11 2010-01-19 Vitex Systems, Inc. Multilayer barrier stacks and methods of making multilayer barrier stacks
US7767498B2 (en) * 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
US9337446B2 (en) * 2008-12-22 2016-05-10 Samsung Display Co., Ltd. Encapsulated RGB OLEDs having enhanced optical output
US9184410B2 (en) * 2008-12-22 2015-11-10 Samsung Display Co., Ltd. Encapsulated white OLEDs having enhanced optical output
US20100167002A1 (en) * 2008-12-30 2010-07-01 Vitex Systems, Inc. Method for encapsulating environmentally sensitive devices
US20110159199A1 (en) * 2009-12-28 2011-06-30 Guardian Industries Corp. Large area combustion deposition line, and associated methods
US8590338B2 (en) * 2009-12-31 2013-11-26 Samsung Mobile Display Co., Ltd. Evaporator with internal restriction
JP5176007B2 (ja) * 2011-03-03 2013-04-03 パナソニック株式会社 半導体基板の表面エッチング装置、およびそれを用いて表面に凹凸形状が形成された半導体基板を製造する方法
US20130092085A1 (en) * 2011-10-17 2013-04-18 Synos Technology, Inc. Linear atomic layer deposition apparatus
CN105148762A (zh) * 2014-05-30 2015-12-16 盛美半导体设备（上海）有限公司 均匀气流装置
KR102507701B1 (ko) * 2019-02-28 2023-03-09 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 성막 장치
US20240068104A1 (en) * 2022-08-23 2024-02-29 Harbhajan Nayar Device for the Thermal Processing of Metallurgy Parts

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3785853A (en) * 1972-05-24 1974-01-15 Unicorp Inc Continuous deposition reactor
DE2830589C2 (de) * 1978-07-12 1985-04-18 Ibm Deutschland Gmbh, 7000 Stuttgart Durchlaufofen zum Prozessieren von Halbleiterplättchen
US4423701A (en) * 1982-03-29 1984-01-03 Energy Conversion Devices, Inc. Glow discharge deposition apparatus including a non-horizontally disposed cathode
US4462332A (en) * 1982-04-29 1984-07-31 Energy Conversion Devices, Inc. Magnetic gas gate
JPS61275135A (ja) * 1985-03-11 1986-12-05 アプライド　マテリアルズ　インコ−ポレ−テツド 硼燐珪酸塩ガラスの形成方法
US4664951A (en) * 1985-07-31 1987-05-12 Energy Conversion Devices, Inc. Method provided for corrective lateral displacement of a longitudinally moving web held in a planar configuration
US4803947A (en) * 1986-01-15 1989-02-14 Canon Kabushiki Kaisha Apparatus for forming deposited film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008012931A1 (de) 2008-03-06 2009-09-17 Vtd Vakuumtechnik Dresden Gmbh Verfahren und Vorrichtung zum Kühlen von Substraten

Also Published As

Publication number Publication date
DE3833320A1 (de) 1989-04-20
US4913090A (en) 1990-04-03
JPH0193129A (ja) 1989-04-12

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee