DE3833232C2 - - Google Patents
Info
- Publication number
- DE3833232C2 DE3833232C2 DE3833232A DE3833232A DE3833232C2 DE 3833232 C2 DE3833232 C2 DE 3833232C2 DE 3833232 A DE3833232 A DE 3833232A DE 3833232 A DE3833232 A DE 3833232A DE 3833232 C2 DE3833232 C2 DE 3833232C2
- Authority
- DE
- Germany
- Prior art keywords
- evaporator
- monomer
- chamber
- capillary action
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000178 monomer Substances 0.000 claims description 35
- 239000007788 liquid Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 13
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims description 5
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000009834 vaporization Methods 0.000 claims description 4
- 230000008016 vaporization Effects 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- QPKZLELXLMKHAC-UHFFFAOYSA-N 2,2,2-trichloro-1,1-bis(4-chlorophenyl)ethanol;1,2,4-trichloro-5-(4-chlorophenyl)sulfonylbenzene Chemical compound C1=CC(Cl)=CC=C1S(=O)(=O)C1=CC(Cl)=C(Cl)C=C1Cl.C=1C=C(Cl)C=CC=1C(C(Cl)(Cl)Cl)(O)C1=CC=C(Cl)C=C1 QPKZLELXLMKHAC-UHFFFAOYSA-N 0.000 claims 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims 1
- 229940073561 hexamethyldisiloxane Drugs 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
- B01D3/10—Vacuum distillation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3833232A DE3833232A1 (de) | 1988-09-30 | 1988-09-30 | Verfahren und vorrichtung zum verdampfen von bei raumtemperatur fluessigen monomeren |
| US07/267,077 US4947789A (en) | 1988-09-30 | 1988-11-04 | Apparatus for vaporizing monomers that flow at room temperature |
| DE8989116613T DE58900138D1 (de) | 1988-09-30 | 1989-09-08 | Verfahren und vorrichtung zum verdampfen von bei raumtemperatur fluessigen monomeren. |
| EP89116613A EP0361171B1 (de) | 1988-09-30 | 1989-09-08 | Verfahren und Vorrichtung zum Verdampfen von bei Raumtemperatur flüssigen Monomeren |
| JP1252491A JPH02213478A (ja) | 1988-09-30 | 1989-09-29 | 室温で液状の単量体を蒸発させる方法並びに装置 |
| KR1019890014142A KR940004616B1 (ko) | 1988-09-30 | 1989-09-30 | 실온(室溫)에서 유동성 단량체(單量體)를 기화시키기 위한 방법과 장치 |
| US07/501,230 US5069930A (en) | 1988-09-30 | 1990-03-29 | Method for the evaporation of monomers that are liquid at room temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3833232A DE3833232A1 (de) | 1988-09-30 | 1988-09-30 | Verfahren und vorrichtung zum verdampfen von bei raumtemperatur fluessigen monomeren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3833232A1 DE3833232A1 (de) | 1990-04-05 |
| DE3833232C2 true DE3833232C2 (Direct) | 1991-05-23 |
Family
ID=6364075
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3833232A Granted DE3833232A1 (de) | 1988-09-30 | 1988-09-30 | Verfahren und vorrichtung zum verdampfen von bei raumtemperatur fluessigen monomeren |
| DE8989116613T Expired - Fee Related DE58900138D1 (de) | 1988-09-30 | 1989-09-08 | Verfahren und vorrichtung zum verdampfen von bei raumtemperatur fluessigen monomeren. |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8989116613T Expired - Fee Related DE58900138D1 (de) | 1988-09-30 | 1989-09-08 | Verfahren und vorrichtung zum verdampfen von bei raumtemperatur fluessigen monomeren. |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US4947789A (Direct) |
| EP (1) | EP0361171B1 (Direct) |
| JP (1) | JPH02213478A (Direct) |
| KR (1) | KR940004616B1 (Direct) |
| DE (2) | DE3833232A1 (Direct) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE20314411U1 (de) * | 2003-09-15 | 2005-01-20 | Viessmann Werke Gmbh & Co Kg | Apparat zur Erzeugung von Wasserstoff |
| DE102012203212A1 (de) * | 2012-03-01 | 2013-09-05 | Osram Opto Semiconductors Gmbh | Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5487918A (en) * | 1990-05-14 | 1996-01-30 | Akhtar; Masud | Method of depositing metal oxides |
| DE4124018C1 (Direct) * | 1991-07-19 | 1992-11-19 | Leybold Ag, 6450 Hanau, De | |
| JPH0610144A (ja) * | 1992-06-29 | 1994-01-18 | Matsushita Electric Ind Co Ltd | 低蒸気圧材料供給装置 |
| EP0585848A1 (de) * | 1992-09-02 | 1994-03-09 | Hoechst Aktiengesellschaft | Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung dünner Schichten |
| DE4236324C1 (Direct) * | 1992-10-28 | 1993-09-02 | Schott Glaswerke, 55122 Mainz, De | |
| JPH06295862A (ja) * | 1992-11-20 | 1994-10-21 | Mitsubishi Electric Corp | 化合物半導体製造装置及び有機金属材料容器 |
| JP3115134B2 (ja) * | 1992-11-27 | 2000-12-04 | 松下電器産業株式会社 | 薄膜処理装置および薄膜処理方法 |
| US5427625A (en) * | 1992-12-18 | 1995-06-27 | Tokyo Electron Kabushiki Kaisha | Method for cleaning heat treatment processing apparatus |
| US5520969A (en) * | 1994-02-04 | 1996-05-28 | Applied Materials, Inc. | Method for in-situ liquid flow rate estimation and verification |
| JP3122311B2 (ja) * | 1994-06-29 | 2001-01-09 | 東京エレクトロン株式会社 | 成膜処理室への液体材料供給装置及びその使用方法 |
| JP3373057B2 (ja) * | 1994-07-29 | 2003-02-04 | エヌオーケー株式会社 | 水素分離膜の製造法 |
| US5648113A (en) * | 1994-09-30 | 1997-07-15 | International Business Machines Corporation | Aluminum oxide LPCVD system |
| US5772771A (en) * | 1995-12-13 | 1998-06-30 | Applied Materials, Inc. | Deposition chamber for improved deposition thickness uniformity |
| US6070551A (en) | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
| DE19735399C2 (de) * | 1997-08-14 | 2002-01-17 | Infineon Technologies Ag | Gasleitungssystem für einen Prozeßreaktor, insbesondere Vertikalofen, zur Behandlung von Wafern und Verfahren zur Behandlung von Wafern in einem Prozeßreaktor |
| US6635114B2 (en) | 1999-12-17 | 2003-10-21 | Applied Material, Inc. | High temperature filter for CVD apparatus |
| US6451692B1 (en) * | 2000-08-18 | 2002-09-17 | Micron Technology, Inc. | Preheating of chemical vapor deposition precursors |
| DE10061828B4 (de) * | 2000-12-12 | 2011-03-31 | Plasmatreat Gmbh | Verfahren zum Einbringen von Material in einen Plasmastrahl und Plasmadüse zur Durchführung des Verfahrens |
| KR100438942B1 (ko) * | 2001-10-12 | 2004-07-03 | 주식회사 엘지이아이 | 플라즈마를 이용한 금속의 내부식처리방법 |
| JP3826072B2 (ja) * | 2002-06-03 | 2006-09-27 | アドバンスド エナジー ジャパン株式会社 | 液体材料気化供給装置 |
| US7727588B2 (en) * | 2003-09-05 | 2010-06-01 | Yield Engineering Systems, Inc. | Apparatus for the efficient coating of substrates |
| FR2868434B1 (fr) * | 2004-04-06 | 2007-04-20 | Neyco Sa | Procedes de revetement d'un substrat et de formation d'un film colore et dispositif associe |
| US7993700B2 (en) * | 2007-03-01 | 2011-08-09 | Applied Materials, Inc. | Silicon nitride passivation for a solar cell |
| WO2008144670A1 (en) | 2007-05-18 | 2008-11-27 | Brooks Automation, Inc. | Load lock fast pump vent |
| US10541157B2 (en) | 2007-05-18 | 2020-01-21 | Brooks Automation, Inc. | Load lock fast pump vent |
| JP5372353B2 (ja) * | 2007-09-25 | 2013-12-18 | 株式会社フジキン | 半導体製造装置用ガス供給装置 |
| DE102007062977B4 (de) * | 2007-12-21 | 2018-07-19 | Schott Ag | Verfahren zur Herstellung von Prozessgasen für die Dampfphasenabscheidung |
| DE102008037160A1 (de) | 2008-08-08 | 2010-02-11 | Krones Ag | Versorgungsvorrichtung |
| JP5083285B2 (ja) * | 2009-08-24 | 2012-11-28 | 東京エレクトロン株式会社 | 疎水化処理装置、疎水化処理方法及び記憶媒体 |
| DE102009049839B4 (de) * | 2009-10-16 | 2012-12-06 | Calyxo Gmbh | Gasverdampfer für Beschichtungsanlagen sowie Verfahren zu dessen Betreiben |
| CN102597596B (zh) * | 2009-11-04 | 2015-04-01 | 东芝三菱电机产业系统株式会社 | 传热装置 |
| US11393703B2 (en) * | 2018-06-18 | 2022-07-19 | Applied Materials, Inc. | Apparatus and method for controlling a flow process material to a deposition chamber |
| WO2020112764A1 (en) * | 2018-11-28 | 2020-06-04 | Lam Research Corporation | Pedestal including vapor chamber for substrate processing systems |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB672097A (Direct) * | ||||
| US3288556A (en) * | 1966-11-29 | Weber iii dispenser | ||
| US2472992A (en) * | 1949-06-14 | Evaporator for therapeutic | ||
| DE1134566B (de) * | 1957-02-13 | 1962-08-09 | Siemens Ag | Vorrichtung zum Herstellen von Isolierstoff-baendern durch Bedampfen mit Metall unter Anwendung einer oertlich begrenzten Vorbedampfung mit kondensations-hindernden Stoffen |
| NL6713713A (Direct) * | 1967-10-10 | 1969-04-14 | ||
| US3875926A (en) * | 1974-02-21 | 1975-04-08 | Matthew William Frank | Solar thermal energy collection system |
| DE3684370D1 (de) * | 1985-06-24 | 1992-04-23 | Silicon Valley Group | Verfahren zum chemischen aufdampfen einer duennen oxydschicht auf einem siliziumsubstrat. |
| US4640221A (en) * | 1985-10-30 | 1987-02-03 | International Business Machines Corporation | Vacuum deposition system with improved mass flow control |
| FR2595052B1 (fr) * | 1986-03-03 | 1990-06-01 | Armines | Procede et dispositif de vaporisation rapide d'un liquide |
| EP0239664B1 (de) * | 1986-04-04 | 1991-12-18 | Ibm Deutschland Gmbh | Verfahren zum Herstellen von Silicium und Sauerstoff enthaltenden Schichten |
| DE3632027C1 (de) * | 1986-09-20 | 1988-02-18 | Rudnay Andre Dr De | Verfahren und Vakuumbedampfungsanlage zum Metallisieren von Folienoberflaechen |
| US4892753A (en) * | 1986-12-19 | 1990-01-09 | Applied Materials, Inc. | Process for PECVD of silicon oxide using TEOS decomposition |
| JPS63199423A (ja) * | 1987-02-16 | 1988-08-17 | Toshiba Corp | 半導体基板表面処理方法 |
-
1988
- 1988-09-30 DE DE3833232A patent/DE3833232A1/de active Granted
- 1988-11-04 US US07/267,077 patent/US4947789A/en not_active Expired - Fee Related
-
1989
- 1989-09-08 EP EP89116613A patent/EP0361171B1/de not_active Expired - Lifetime
- 1989-09-08 DE DE8989116613T patent/DE58900138D1/de not_active Expired - Fee Related
- 1989-09-29 JP JP1252491A patent/JPH02213478A/ja active Pending
- 1989-09-30 KR KR1019890014142A patent/KR940004616B1/ko not_active Expired - Fee Related
-
1990
- 1990-03-29 US US07/501,230 patent/US5069930A/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE20314411U1 (de) * | 2003-09-15 | 2005-01-20 | Viessmann Werke Gmbh & Co Kg | Apparat zur Erzeugung von Wasserstoff |
| DE102012203212A1 (de) * | 2012-03-01 | 2013-09-05 | Osram Opto Semiconductors Gmbh | Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses |
| DE102012203212B4 (de) | 2012-03-01 | 2025-02-27 | Osram Oled Gmbh | Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3833232A1 (de) | 1990-04-05 |
| KR900004370A (ko) | 1990-04-12 |
| US4947789A (en) | 1990-08-14 |
| EP0361171A1 (de) | 1990-04-04 |
| DE58900138D1 (de) | 1991-07-11 |
| US5069930A (en) | 1991-12-03 |
| KR940004616B1 (ko) | 1994-05-27 |
| EP0361171B1 (de) | 1991-06-05 |
| JPH02213478A (ja) | 1990-08-24 |
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