DE3786028D1 - Heterouebergangshalbleiteranordnung. - Google Patents
Heterouebergangshalbleiteranordnung.Info
- Publication number
- DE3786028D1 DE3786028D1 DE8787400571T DE3786028T DE3786028D1 DE 3786028 D1 DE3786028 D1 DE 3786028D1 DE 8787400571 T DE8787400571 T DE 8787400571T DE 3786028 T DE3786028 T DE 3786028T DE 3786028 D1 DE3786028 D1 DE 3786028D1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- base
- layers
- collector
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000007704 transition Effects 0.000 title 1
- 230000004888 barrier function Effects 0.000 abstract 3
- 230000005641 tunneling Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
- Y10S977/761—Superlattice with well or barrier thickness adapted for increasing the reflection, transmission, or filtering of carriers having energies above the bulk-form conduction or valence band energy level of the well or barrier, i.e. well or barrier with n-integer-λ-carrier-/4 thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/961—Specified use of nanostructure for textile or fabric treatment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61053725A JPS62211948A (ja) | 1986-03-13 | 1986-03-13 | ヘテロ接合半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3786028D1 true DE3786028D1 (de) | 1993-07-08 |
DE3786028T2 DE3786028T2 (de) | 1993-09-09 |
Family
ID=12950805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787400571T Expired - Fee Related DE3786028T2 (de) | 1986-03-13 | 1987-03-13 | Heterouebergangshalbleiteranordnung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5543749A (de) |
EP (1) | EP0238406B1 (de) |
JP (1) | JPS62211948A (de) |
DE (1) | DE3786028T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2776819B2 (ja) * | 1987-12-18 | 1998-07-16 | 株式会社日立製作所 | 半導体構造 |
CA2003134C (en) * | 1988-11-16 | 1995-02-07 | Thomas K. Gaylord | Solid state, quantum mechanical, electron and hole wave devices |
US5132981A (en) * | 1989-05-31 | 1992-07-21 | Hitachi, Ltd. | Semiconductor optical device |
FR2678774B1 (fr) * | 1991-07-05 | 1998-07-10 | Thomson Csf | Detecteur d'ondes electromagnetiques. |
JP2731089B2 (ja) * | 1991-10-02 | 1998-03-25 | 三菱電機株式会社 | 高速動作半導体装置およびその製造方法 |
JP2000133655A (ja) * | 1998-10-23 | 2000-05-12 | Canare Electric Co Ltd | 量子波干渉層を有するトランジスタ |
US7556278B2 (en) * | 2003-05-21 | 2009-07-07 | Cequent Towing Products, Inc. | Fifth wheel hitch assembly incorporating king pin detection system |
US7998807B2 (en) * | 2003-08-22 | 2011-08-16 | The Board Of Trustees Of The University Of Illinois | Method for increasing the speed of a light emitting biopolar transistor device |
US7026642B2 (en) * | 2003-08-27 | 2006-04-11 | Micron Technology, Inc. | Vertical tunneling transistor |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2607940A1 (de) * | 1976-02-27 | 1977-09-08 | Max Planck Gesellschaft | Mehrschichtiges halbleiterbauelement |
US4205329A (en) * | 1976-03-29 | 1980-05-27 | Bell Telephone Laboratories, Incorporated | Periodic monolayer semiconductor structures grown by molecular beam epitaxy |
US4396931A (en) * | 1981-06-12 | 1983-08-02 | International Business Machines Corporation | Tunnel emitter upper valley transistor |
FR2508707A1 (fr) * | 1981-06-26 | 1982-12-31 | Thomson Csf | Transistor balistique a multiples heterojonctions |
EP0068064A1 (de) * | 1981-06-30 | 1983-01-05 | International Business Machines Corporation | Halbleiterschaltung mit einer resonant arbeitenden Tunnel-Triode |
JPH0665217B2 (ja) * | 1982-02-19 | 1994-08-22 | 日本電気株式会社 | トランジスタ |
GB2128026B (en) * | 1982-10-01 | 1986-03-26 | Gen Electric Co Plc | Transistors |
EP0133342B1 (de) * | 1983-06-24 | 1989-11-29 | Nec Corporation | Halbleiterstruktur mit Übergitter hoher Trägerdichte |
US4617724A (en) * | 1983-06-30 | 1986-10-21 | Fujitsu Limited | Process for fabricating heterojunction bipolar transistor with low base resistance |
JPS6010775A (ja) * | 1983-06-30 | 1985-01-19 | Fujitsu Ltd | ヘテロ接合バイポ−ラ半導体装置 |
JPS6028268A (ja) * | 1983-07-26 | 1985-02-13 | Agency Of Ind Science & Technol | 半導体装置 |
CA1237824A (en) * | 1984-04-17 | 1988-06-07 | Takashi Mimura | Resonant tunneling semiconductor device |
JPS6158268A (ja) * | 1984-08-30 | 1986-03-25 | Fujitsu Ltd | 高速半導体装置 |
JPS61210679A (ja) * | 1985-03-15 | 1986-09-18 | Sony Corp | 半導体装置 |
JPS62229878A (ja) * | 1986-03-04 | 1987-10-08 | Fujitsu Ltd | 高速半導体装置 |
-
1986
- 1986-03-13 JP JP61053725A patent/JPS62211948A/ja active Pending
-
1987
- 1987-03-13 DE DE8787400571T patent/DE3786028T2/de not_active Expired - Fee Related
- 1987-03-13 EP EP87400571A patent/EP0238406B1/de not_active Expired - Lifetime
-
1994
- 1994-12-27 US US08/363,989 patent/US5543749A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS62211948A (ja) | 1987-09-17 |
EP0238406B1 (de) | 1993-06-02 |
EP0238406A2 (de) | 1987-09-23 |
US5543749A (en) | 1996-08-06 |
DE3786028T2 (de) | 1993-09-09 |
EP0238406A3 (en) | 1987-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |