DE3786028D1 - Heterouebergangshalbleiteranordnung. - Google Patents

Heterouebergangshalbleiteranordnung.

Info

Publication number
DE3786028D1
DE3786028D1 DE8787400571T DE3786028T DE3786028D1 DE 3786028 D1 DE3786028 D1 DE 3786028D1 DE 8787400571 T DE8787400571 T DE 8787400571T DE 3786028 T DE3786028 T DE 3786028T DE 3786028 D1 DE3786028 D1 DE 3786028D1
Authority
DE
Germany
Prior art keywords
layer
base
layers
collector
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787400571T
Other languages
English (en)
Other versions
DE3786028T2 (de
Inventor
Yuji Haishiti Omotasando Awano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3786028D1 publication Critical patent/DE3786028D1/de
Application granted granted Critical
Publication of DE3786028T2 publication Critical patent/DE3786028T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
    • Y10S977/761—Superlattice with well or barrier thickness adapted for increasing the reflection, transmission, or filtering of carriers having energies above the bulk-form conduction or valence band energy level of the well or barrier, i.e. well or barrier with n-integer-λ-carrier-/4 thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/961—Specified use of nanostructure for textile or fabric treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Bipolar Transistors (AREA)
DE8787400571T 1986-03-13 1987-03-13 Heterouebergangshalbleiteranordnung. Expired - Fee Related DE3786028T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61053725A JPS62211948A (ja) 1986-03-13 1986-03-13 ヘテロ接合半導体装置

Publications (2)

Publication Number Publication Date
DE3786028D1 true DE3786028D1 (de) 1993-07-08
DE3786028T2 DE3786028T2 (de) 1993-09-09

Family

ID=12950805

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787400571T Expired - Fee Related DE3786028T2 (de) 1986-03-13 1987-03-13 Heterouebergangshalbleiteranordnung.

Country Status (4)

Country Link
US (1) US5543749A (de)
EP (1) EP0238406B1 (de)
JP (1) JPS62211948A (de)
DE (1) DE3786028T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2776819B2 (ja) * 1987-12-18 1998-07-16 株式会社日立製作所 半導体構造
EP0444134A4 (en) * 1988-11-16 1993-03-03 Gaylord, Thomas K Solid state, quantum mechanical, electron and hole wave devices
US5132981A (en) * 1989-05-31 1992-07-21 Hitachi, Ltd. Semiconductor optical device
FR2678774B1 (fr) * 1991-07-05 1998-07-10 Thomson Csf Detecteur d'ondes electromagnetiques.
JP2731089B2 (ja) * 1991-10-02 1998-03-25 三菱電機株式会社 高速動作半導体装置およびその製造方法
JP2000133655A (ja) * 1998-10-23 2000-05-12 Canare Electric Co Ltd 量子波干渉層を有するトランジスタ
CA2526528C (en) * 2003-05-21 2009-07-21 Cequent Towing Products, Inc. Fifth wheel hitch assembly incorporating king pin detection system
US7998807B2 (en) * 2003-08-22 2011-08-16 The Board Of Trustees Of The University Of Illinois Method for increasing the speed of a light emitting biopolar transistor device
US7026642B2 (en) * 2003-08-27 2006-04-11 Micron Technology, Inc. Vertical tunneling transistor

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2607940A1 (de) * 1976-02-27 1977-09-08 Max Planck Gesellschaft Mehrschichtiges halbleiterbauelement
US4205329A (en) * 1976-03-29 1980-05-27 Bell Telephone Laboratories, Incorporated Periodic monolayer semiconductor structures grown by molecular beam epitaxy
US4396931A (en) * 1981-06-12 1983-08-02 International Business Machines Corporation Tunnel emitter upper valley transistor
FR2508707A1 (fr) * 1981-06-26 1982-12-31 Thomson Csf Transistor balistique a multiples heterojonctions
EP0068064A1 (de) * 1981-06-30 1983-01-05 International Business Machines Corporation Halbleiterschaltung mit einer resonant arbeitenden Tunnel-Triode
JPH0665217B2 (ja) * 1982-02-19 1994-08-22 日本電気株式会社 トランジスタ
GB2128026B (en) * 1982-10-01 1986-03-26 Gen Electric Co Plc Transistors
EP0133342B1 (de) * 1983-06-24 1989-11-29 Nec Corporation Halbleiterstruktur mit Übergitter hoher Trägerdichte
JPS6010775A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd ヘテロ接合バイポ−ラ半導体装置
US4617724A (en) * 1983-06-30 1986-10-21 Fujitsu Limited Process for fabricating heterojunction bipolar transistor with low base resistance
JPS6028268A (ja) * 1983-07-26 1985-02-13 Agency Of Ind Science & Technol 半導体装置
CA1237824A (en) * 1984-04-17 1988-06-07 Takashi Mimura Resonant tunneling semiconductor device
JPS6158268A (ja) * 1984-08-30 1986-03-25 Fujitsu Ltd 高速半導体装置
JPS61210679A (ja) * 1985-03-15 1986-09-18 Sony Corp 半導体装置
JPS62229878A (ja) * 1986-03-04 1987-10-08 Fujitsu Ltd 高速半導体装置

Also Published As

Publication number Publication date
EP0238406B1 (de) 1993-06-02
JPS62211948A (ja) 1987-09-17
EP0238406A2 (de) 1987-09-23
EP0238406A3 (en) 1987-11-19
US5543749A (en) 1996-08-06
DE3786028T2 (de) 1993-09-09

Similar Documents

Publication Publication Date Title
ATE279799T1 (de) Verbindungshalbleiterstruktur für optoelektronische bauelemente
DE69021177D1 (de) Halbleiteranordnung mit isolierter Gateelektrode.
IT7927193A0 (it) Metodo di fabbricazione di un sistema di cablaggio, sistema di cablaggio fabbricato in accordo con tale metodo e dispositivo semiconduttore dotato di tale sistema di cablaggio.
DE3886315D1 (de) Halbleiteranordnungen mit supraleitenden Verbindungen.
EP0312955A3 (de) Halbleiteranordnung mit einem Dünnfilmtransistor
DE3786028D1 (de) Heterouebergangshalbleiteranordnung.
DE68909632D1 (de) Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren.
KR880701974A (ko) 주입층이 변형된 이중 장벽 터널 다이오드
DE68921368D1 (de) Gate-Abschalthalbleitereinrichtung.
EP0325161A3 (de) Halbleiteranordnung mit Isolationsgräben
KR910008872A (ko) 반도체 소자와 그 제조방법
DE68918134D1 (de) Elektronenemittierende Halbleitervorrichtung.
BE855582A (fr) Developpement par creation sur place, de couches d'oxyde de semi-conducteur
IT1037485B (it) Dispositivo di memorizzazione perfezionato
KR850005164A (ko) 반도체 장치
EP0658939A3 (de) Spannungsgesteuerter Thyristor und Verfahren zu seiner Herstellung
DE69015458D1 (de) Elektrodenstruktur für III-V-Verbindungshalbleiterbauelement und deren Herstellungsverfahren.
ATE34701T1 (de) Formteil aus pvc.
EP0282407A3 (de) Halbleiteranordnung mit vielfachen Quanten-Potentialtöpfen
KR890015347A (ko) 변형 초격자 구조층을 포함하는 반도체 기판
EP1011148A3 (de) Halbleiter-Schaltungsanordnung mit isoliertem Gate und dessen Betriebsverfahren
SE8000017L (sv) Styrelektrodreglerad halvledaranordning
EP0380249A3 (de) Bipolarer Transistor mit isolierter Steuerelektrode
EP0370830A3 (de) Halbleiterlaser mit mehreren aktiven Schichten
DE68918746D1 (de) Halbleitersubstrat mit dünner Supraleiterschicht.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee