DE3777507D1 - Verfahren zur chemischen dampfabscheidung von epitaxialen siliziumschichten bei niedriger temperatur und niedrigem druck. - Google Patents

Verfahren zur chemischen dampfabscheidung von epitaxialen siliziumschichten bei niedriger temperatur und niedrigem druck.

Info

Publication number
DE3777507D1
DE3777507D1 DE8787112732T DE3777507T DE3777507D1 DE 3777507 D1 DE3777507 D1 DE 3777507D1 DE 8787112732 T DE8787112732 T DE 8787112732T DE 3777507 T DE3777507 T DE 3777507T DE 3777507 D1 DE3777507 D1 DE 3777507D1
Authority
DE
Germany
Prior art keywords
vapor deposition
chemical vapor
epitaxial silicon
silicon layers
low temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787112732T
Other languages
English (en)
Inventor
Bernard Steele Meyerson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3777507D1 publication Critical patent/DE3777507D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8787112732T 1986-09-12 1987-09-01 Verfahren zur chemischen dampfabscheidung von epitaxialen siliziumschichten bei niedriger temperatur und niedrigem druck. Expired - Lifetime DE3777507D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US90685486A 1986-09-12 1986-09-12

Publications (1)

Publication Number Publication Date
DE3777507D1 true DE3777507D1 (de) 1992-04-23

Family

ID=25423093

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787112732T Expired - Lifetime DE3777507D1 (de) 1986-09-12 1987-09-01 Verfahren zur chemischen dampfabscheidung von epitaxialen siliziumschichten bei niedriger temperatur und niedrigem druck.

Country Status (5)

Country Link
EP (1) EP0259759B1 (de)
JP (1) JP2681098B2 (de)
BR (1) BR8704621A (de)
CA (1) CA1328796C (de)
DE (1) DE3777507D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3868875D1 (de) * 1987-11-30 1992-04-09 Daido Oxygen Apparat zur produktion von halbleitern.
US5316958A (en) * 1990-05-31 1994-05-31 International Business Machines Corporation Method of dopant enhancement in an epitaxial silicon layer by using germanium
US5181964A (en) * 1990-06-13 1993-01-26 International Business Machines Corporation Single ended ultra-high vacuum chemical vapor deposition (uhv/cvd) reactor
GB9026875D0 (en) * 1990-12-11 1991-01-30 Rauf Ijaz A Method for coating glass and other substrates
DE69233359T2 (de) * 1991-07-16 2005-06-02 Seiko Epson Corp. Verfahren zur herstellung einer halbleiter-dünnschicht mit einer chemischen gasphasen-beschichtungsanlage
US5421957A (en) * 1993-07-30 1995-06-06 Applied Materials, Inc. Low temperature etching in cold-wall CVD systems
DE102012108250A1 (de) 2012-09-05 2014-03-06 Spawnt Private S.À.R.L. Verfahren zur Abscheidung von Siliciumschichten
EP3701226B1 (de) 2017-10-24 2024-06-05 Deer Technology Ltd Optische lesevorrichtung für verbrauchszähler

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135633A (ja) * 1982-02-08 1983-08-12 Hitachi Ltd シリコン・エピタキシヤル成長方法
JPH0766909B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 元素半導体単結晶薄膜の成長法
JPS62216222A (ja) * 1986-03-17 1987-09-22 Nippon Telegr & Teleph Corp <Ntt> イオンド−ピング機構付気相成長装置
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate

Also Published As

Publication number Publication date
CA1328796C (en) 1994-04-26
EP0259759B1 (de) 1992-03-18
BR8704621A (pt) 1988-04-26
EP0259759A2 (de) 1988-03-16
EP0259759A3 (en) 1989-01-25
JP2681098B2 (ja) 1997-11-19
JPS6370515A (ja) 1988-03-30

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