BR8704621A - Metodo para deposicao quimica em fase de vapor,a baixa temperatura e baixa pressao,de camada(s)epitaxial(ais)de silicio - Google Patents

Metodo para deposicao quimica em fase de vapor,a baixa temperatura e baixa pressao,de camada(s)epitaxial(ais)de silicio

Info

Publication number
BR8704621A
BR8704621A BR8704621A BR8704621A BR8704621A BR 8704621 A BR8704621 A BR 8704621A BR 8704621 A BR8704621 A BR 8704621A BR 8704621 A BR8704621 A BR 8704621A BR 8704621 A BR8704621 A BR 8704621A
Authority
BR
Brazil
Prior art keywords
silicio
epitaxial layer
chemical deposition
steam phase
low temperature
Prior art date
Application number
BR8704621A
Other languages
English (en)
Inventor
Bernard S Meyerson
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BR8704621A publication Critical patent/BR8704621A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BR8704621A 1986-09-12 1987-09-04 Metodo para deposicao quimica em fase de vapor,a baixa temperatura e baixa pressao,de camada(s)epitaxial(ais)de silicio BR8704621A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US90685486A 1986-09-12 1986-09-12

Publications (1)

Publication Number Publication Date
BR8704621A true BR8704621A (pt) 1988-04-26

Family

ID=25423093

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8704621A BR8704621A (pt) 1986-09-12 1987-09-04 Metodo para deposicao quimica em fase de vapor,a baixa temperatura e baixa pressao,de camada(s)epitaxial(ais)de silicio

Country Status (5)

Country Link
EP (1) EP0259759B1 (pt)
JP (1) JP2681098B2 (pt)
BR (1) BR8704621A (pt)
CA (1) CA1328796C (pt)
DE (1) DE3777507D1 (pt)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0319121B1 (en) * 1987-11-30 1992-03-04 Daidousanso Co., Ltd. Apparatus for producing semiconductors
US5316958A (en) * 1990-05-31 1994-05-31 International Business Machines Corporation Method of dopant enhancement in an epitaxial silicon layer by using germanium
US5181964A (en) * 1990-06-13 1993-01-26 International Business Machines Corporation Single ended ultra-high vacuum chemical vapor deposition (uhv/cvd) reactor
GB9026875D0 (en) * 1990-12-11 1991-01-30 Rauf Ijaz A Method for coating glass and other substrates
WO1993002468A1 (en) * 1991-07-16 1993-02-04 Seiko Epson Corporation Chemical vapor deposition apparatus, method of semiconductor film formation, and method of producing thin film semiconductor device
US5421957A (en) * 1993-07-30 1995-06-06 Applied Materials, Inc. Low temperature etching in cold-wall CVD systems
DE102012108250A1 (de) 2012-09-05 2014-03-06 Spawnt Private S.À.R.L. Verfahren zur Abscheidung von Siliciumschichten
US11747172B2 (en) 2017-10-24 2023-09-05 Deer Technology Ltd. Utility meter register optical reading device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135633A (ja) * 1982-02-08 1983-08-12 Hitachi Ltd シリコン・エピタキシヤル成長方法
JPH0766909B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 元素半導体単結晶薄膜の成長法
JPS62216222A (ja) * 1986-03-17 1987-09-22 Nippon Telegr & Teleph Corp <Ntt> イオンド−ピング機構付気相成長装置
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate

Also Published As

Publication number Publication date
JPS6370515A (ja) 1988-03-30
DE3777507D1 (de) 1992-04-23
JP2681098B2 (ja) 1997-11-19
EP0259759B1 (en) 1992-03-18
EP0259759A2 (en) 1988-03-16
CA1328796C (en) 1994-04-26
EP0259759A3 (en) 1989-01-25

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Legal Events

Date Code Title Description
FB19 Grant procedure suspended (art. 19)
FF Decision: granting
HO Change of classification

Free format text: CLASSIFICACAO INT. CL. 5 C23C 16/24, C30B 25/02, C30B 29/06

FG Letter patent granted
B21A Expiry acc. art. 78, item i of ipl- expiry of the term of protection

Free format text: PATENTE EXTINTA EM 04/09/2002