DE3772425D1 - Integrierter widerstand auf einem halbleitersubstrat. - Google Patents

Integrierter widerstand auf einem halbleitersubstrat.

Info

Publication number
DE3772425D1
DE3772425D1 DE8787400742T DE3772425T DE3772425D1 DE 3772425 D1 DE3772425 D1 DE 3772425D1 DE 8787400742 T DE8787400742 T DE 8787400742T DE 3772425 T DE3772425 T DE 3772425T DE 3772425 D1 DE3772425 D1 DE 3772425D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
integrated resistance
integrated
resistance
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787400742T
Other languages
English (en)
Inventor
Bruno Nadd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3772425D1 publication Critical patent/DE3772425D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE8787400742T 1986-04-04 1987-04-03 Integrierter widerstand auf einem halbleitersubstrat. Expired - Fee Related DE3772425D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8604858A FR2596922B1 (fr) 1986-04-04 1986-04-04 Resistance integree sur un substrat semi-conducteur

Publications (1)

Publication Number Publication Date
DE3772425D1 true DE3772425D1 (de) 1991-10-02

Family

ID=9333914

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787400742T Expired - Fee Related DE3772425D1 (de) 1986-04-04 1987-04-03 Integrierter widerstand auf einem halbleitersubstrat.

Country Status (6)

Country Link
US (1) US4792840A (de)
EP (1) EP0240435B1 (de)
JP (1) JP2619343B2 (de)
CA (1) CA1284691C (de)
DE (1) DE3772425D1 (de)
FR (1) FR2596922B1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128514A (en) * 1987-07-31 1992-07-07 Siemens Aktiengesellschaft Black radiator for use as an emitter in calibratable gas sensors
JPS6481835A (en) * 1987-09-24 1989-03-28 Yamaguchi Unmo Kogyosho Kk Mica powder filler and granulation thereof
FR2646019B1 (fr) * 1989-04-14 1991-07-19 Sgs Thomson Microelectronics Resistance spirale haute tension
FR2649828B1 (fr) * 1989-07-17 1991-10-31 Sgs Thomson Microelectronics Circuit integre vdmos/logique comprenant un transistor vertical deplete et une diode zener
DE69224827T2 (de) * 1992-05-28 1998-09-10 Cons Ric Microelettronica Auf einem Halbleitersubstrat integrierter Spiralwiderstand
EP0571695A1 (de) * 1992-05-28 1993-12-01 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Auf einem Halbleitersubstrat integrierter Hochsspannungswiderstand
FR2693035B1 (fr) * 1992-06-30 1994-09-30 Sgs Thomson Microelectronics Diode de protection pour composant semiconducteur vertical.
US6222247B1 (en) * 1999-12-02 2001-04-24 United Microelectronics Corp. Semiconductor resistor that can be withstand high voltages
JP4469584B2 (ja) * 2003-09-12 2010-05-26 株式会社東芝 半導体装置
US7306999B2 (en) * 2005-01-25 2007-12-11 Semiconductor Components Industries, L.L.C. High voltage sensor device and method therefor
US7955943B2 (en) * 2005-01-25 2011-06-07 Semiconductor Components Industries, Llc High voltage sensor device and method therefor
US7956418B2 (en) * 2007-05-29 2011-06-07 Mediatek Inc. ESD protection devices
CN114267717B (zh) * 2021-11-19 2024-03-01 深圳深爱半导体股份有限公司 半导体器件及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB945747A (de) * 1959-02-06 Texas Instruments Inc
FR1539871A (fr) * 1967-08-07 1968-09-20 Lip Sa élément plan pour la constitution de selfs ou de résistances par empilement d'éléments de ce type
US3629667A (en) * 1969-03-14 1971-12-21 Ibm Semiconductor resistor with uniforms current distribution at its contact surface
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
US4009483A (en) * 1974-04-04 1977-02-22 Motorola, Inc. Implementation of surface sensitive semiconductor devices
US4139833A (en) * 1976-11-22 1979-02-13 Gould Inc. Resistance temperature sensor
JPS5833708B2 (ja) * 1977-01-31 1983-07-21 株式会社東芝 集積回路装置
IT1115654B (it) * 1977-05-04 1986-02-03 Ates Componenti Elettron Partitore di tensione diffuso per circuito integrato monolitico
GB2011178B (en) * 1977-12-15 1982-03-17 Philips Electronic Associated Fieldeffect devices
JPS5811750B2 (ja) * 1979-06-04 1983-03-04 株式会社日立製作所 高耐圧抵抗素子
JPS57160159A (en) * 1981-03-28 1982-10-02 Toshiba Corp High breakdown voltage planar type semiconductor device
JPS5976466A (ja) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp プレ−ナ形半導体装置

Also Published As

Publication number Publication date
JP2619343B2 (ja) 1997-06-11
EP0240435B1 (de) 1991-08-28
US4792840A (en) 1988-12-20
FR2596922B1 (fr) 1988-05-20
EP0240435A1 (de) 1987-10-07
CA1284691C (fr) 1991-06-04
JPS62239561A (ja) 1987-10-20
FR2596922A1 (fr) 1987-10-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee