DE3770540D1 - Verfahren zum abscheiden von wolframsilicid durch abscheidung aus der gasphase bei vermindertem druck (lpcvd). - Google Patents

Verfahren zum abscheiden von wolframsilicid durch abscheidung aus der gasphase bei vermindertem druck (lpcvd).

Info

Publication number
DE3770540D1
DE3770540D1 DE8787110546T DE3770540T DE3770540D1 DE 3770540 D1 DE3770540 D1 DE 3770540D1 DE 8787110546 T DE8787110546 T DE 8787110546T DE 3770540 T DE3770540 T DE 3770540T DE 3770540 D1 DE3770540 D1 DE 3770540D1
Authority
DE
Germany
Prior art keywords
lpcvd
deposition
reduced pressure
gas phase
tungsten silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787110546T
Other languages
German (de)
English (en)
Inventor
Joseph Martin Jasinski
Bernard Steele Meyerson
Bruce Albert Scott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3770540D1 publication Critical patent/DE3770540D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/01312—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8787110546T 1986-08-11 1987-07-21 Verfahren zum abscheiden von wolframsilicid durch abscheidung aus der gasphase bei vermindertem druck (lpcvd). Expired - Lifetime DE3770540D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/895,119 US4684542A (en) 1986-08-11 1986-08-11 Low pressure chemical vapor deposition of tungsten silicide

Publications (1)

Publication Number Publication Date
DE3770540D1 true DE3770540D1 (de) 1991-07-11

Family

ID=25404008

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787110546T Expired - Lifetime DE3770540D1 (de) 1986-08-11 1987-07-21 Verfahren zum abscheiden von wolframsilicid durch abscheidung aus der gasphase bei vermindertem druck (lpcvd).

Country Status (4)

Country Link
US (1) US4684542A (https=)
EP (1) EP0256337B1 (https=)
JP (1) JPS6345373A (https=)
DE (1) DE3770540D1 (https=)

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2195663B (en) * 1986-08-15 1990-08-22 Nippon Telegraph & Telephone Chemical vapour deposition method and apparatus therefor
JPS63109172A (ja) * 1986-10-27 1988-05-13 バリアン・アソシエイツ・インコ−ポレイテッド メタルシリサイドの低圧化学蒸着
US5223455A (en) * 1987-07-10 1993-06-29 Kabushiki Kaisha Toshiba Method of forming refractory metal film
US4891488A (en) * 1987-07-16 1990-01-02 Texas Instruments Incorporated Processing apparatus and method
US4855016A (en) * 1987-07-16 1989-08-08 Texas Instruments Incorporated Method for etching aluminum film doped with copper
US4857132A (en) * 1987-07-16 1989-08-15 Texas Instruments Incorporated Processing apparatus for wafers
US4832778A (en) * 1987-07-16 1989-05-23 Texas Instruments Inc. Processing apparatus for wafers
US4818326A (en) * 1987-07-16 1989-04-04 Texas Instruments Incorporated Processing apparatus
US4837113A (en) * 1987-07-16 1989-06-06 Texas Instruments Incorporated Method for depositing compound from group II-VI
US4844773A (en) * 1987-07-16 1989-07-04 Texas Instruments Incorporated Process for etching silicon nitride film
US4830705A (en) * 1987-07-16 1989-05-16 Texas Instruments Incorporated Method for etch of GaAs
US4838984A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for etching films of mercury-cadmium-telluride and zinc sulfid
US4849067A (en) * 1987-07-16 1989-07-18 Texas Instruments Incorporated Method for etching tungsten
US4838990A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for plasma etching tungsten
US4830700A (en) * 1987-07-16 1989-05-16 Texas Instruments Incorporated Processing apparatus and method
US4828649A (en) * 1987-07-16 1989-05-09 Texas Instruments Incorporated Method for etching an aluminum film doped with silicon
US4832777A (en) * 1987-07-16 1989-05-23 Texas Instruments Incorporated Processing apparatus and method
US4842676A (en) * 1987-07-16 1989-06-27 Texas Instruments Incorporated Process for etch of tungsten
US4832779A (en) * 1987-07-16 1989-05-23 Texas Instruments Incorporated Processing apparatus
US4872938A (en) * 1987-07-16 1989-10-10 Texas Instruments Incorporated Processing apparatus
US4822450A (en) * 1987-07-16 1989-04-18 Texas Instruments Incorporated Processing apparatus and method
US4820377A (en) * 1987-07-16 1989-04-11 Texas Instruments Incorporated Method for cleanup processing chamber and vacuum process module
US4863558A (en) * 1987-07-16 1989-09-05 Texas Instruments Incorporated Method for etching tungsten
US4842687A (en) * 1987-07-16 1989-06-27 Texas Instruments Incorporated Method for etching tungsten
US4855160A (en) * 1987-07-16 1989-08-08 Texas Instruments Incorporated Method for passivating wafer
US4867841A (en) * 1987-07-16 1989-09-19 Texas Instruments Incorporated Method for etch of polysilicon film
US4816098A (en) * 1987-07-16 1989-03-28 Texas Instruments Incorporated Apparatus for transferring workpieces
US4842686A (en) * 1987-07-17 1989-06-27 Texas Instruments Incorporated Wafer processing apparatus and method
US4902645A (en) * 1987-08-24 1990-02-20 Fujitsu Limited Method of selectively forming a silicon-containing metal layer
FR2622052B1 (fr) * 1987-10-19 1990-02-16 Air Liquide Procede de depot de siliciure de metal refractaire pour la fabrication de circuits integres
US4988533A (en) * 1988-05-27 1991-01-29 Texas Instruments Incorporated Method for deposition of silicon oxide on a wafer
GB2222416B (en) * 1988-08-31 1993-03-03 Watkins Johnson Co Processes using disilane
JPH02185973A (ja) * 1989-01-13 1990-07-20 Tokyo Electron Ltd 金属シリサイド膜の形成方法
US5231056A (en) * 1992-01-15 1993-07-27 Micron Technology, Inc. Tungsten silicide (WSix) deposition process for semiconductor manufacture
US5342652A (en) * 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
US6090706A (en) * 1993-06-28 2000-07-18 Applied Materials, Inc. Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein
JPH07176484A (ja) * 1993-06-28 1995-07-14 Applied Materials Inc 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法
US5482749A (en) * 1993-06-28 1996-01-09 Applied Materials, Inc. Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
KR0161735B1 (ko) * 1995-06-30 1999-02-01 김주용 반도체 소자의 제조방법
US5908659A (en) * 1997-01-03 1999-06-01 Mosel Vitelic Inc. Method for reducing the reflectivity of a silicide layer
US6153519A (en) 1997-03-31 2000-11-28 Motorola, Inc. Method of forming a barrier layer
US5888588A (en) * 1997-03-31 1999-03-30 Motorola, Inc. Process for forming a semiconductor device
US5958508A (en) * 1997-03-31 1999-09-28 Motorlola, Inc. Process for forming a semiconductor device
US5976941A (en) * 1997-06-06 1999-11-02 The Whitaker Corporation Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates
TW396646B (en) 1997-09-11 2000-07-01 Lg Semicon Co Ltd Manufacturing method of semiconductor devices
KR100425147B1 (ko) * 1997-09-29 2004-05-17 주식회사 하이닉스반도체 반도체소자의제조방법
US5856237A (en) * 1997-10-20 1999-01-05 Industrial Technology Research Institute Insitu formation of TiSi2/TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer
EP0935284A1 (en) * 1998-01-29 1999-08-11 Chul-Ju Hwang CVD of silicon containing film using Si2H6
US6210813B1 (en) 1998-09-02 2001-04-03 Micron Technology, Inc. Forming metal silicide resistant to subsequent thermal processing
JP3549188B2 (ja) * 2000-03-27 2004-08-04 日本エー・エス・エム株式会社 半導体基板への薄膜成膜方法
AU2002306436A1 (en) * 2001-02-12 2002-10-15 Asm America, Inc. Improved process for deposition of semiconductor films
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
DE10134461B4 (de) * 2001-07-16 2006-05-18 Infineon Technologies Ag Prozess zur Abscheidung von WSix-Schichten auf hoher Topografie mit definierter Stöchiometrie und dadurch hergestelltes Bauelement
JP4387190B2 (ja) * 2001-10-18 2009-12-16 ビュン，チュル，スー 汚染防止と膜成長速度増進機能を備える化学気相蒸着方法及び装置
US6815007B1 (en) 2002-03-04 2004-11-09 Taiwan Semiconductor Manufacturing Company Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
US7601225B2 (en) * 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
US7294582B2 (en) * 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
US7297641B2 (en) * 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US7092287B2 (en) * 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
JP2005064284A (ja) * 2003-08-14 2005-03-10 Asm Japan Kk 半導体基板保持装置
US7629270B2 (en) * 2004-08-27 2009-12-08 Asm America, Inc. Remote plasma activated nitridation
US7253084B2 (en) 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7674726B2 (en) * 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
US7427571B2 (en) * 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US20070054048A1 (en) * 2005-09-07 2007-03-08 Suvi Haukka Extended deposition range by hot spots
US7553516B2 (en) * 2005-12-16 2009-06-30 Asm International N.V. System and method of reducing particle contamination of semiconductor substrates
WO2007075369A1 (en) * 2005-12-16 2007-07-05 Asm International N.V. Low temperature doped silicon layer formation
JP5280843B2 (ja) * 2006-05-25 2013-09-04 ルネサスエレクトロニクス株式会社 金属化合物層の形成方法、及び金属化合物層の形成装置
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7629256B2 (en) * 2007-05-14 2009-12-08 Asm International N.V. In situ silicon and titanium nitride deposition
US7851307B2 (en) * 2007-08-17 2010-12-14 Micron Technology, Inc. Method of forming complex oxide nanodots for a charge trap
US8343583B2 (en) 2008-07-10 2013-01-01 Asm International N.V. Method for vaporizing non-gaseous precursor in a fluidized bed
US8012876B2 (en) * 2008-12-02 2011-09-06 Asm International N.V. Delivery of vapor precursor from solid source
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
WO2012047945A2 (en) 2010-10-05 2012-04-12 Silcotek Corp. Wear resistant coating, article, and method
JP5243519B2 (ja) * 2010-12-22 2013-07-24 東京エレクトロン株式会社 成膜装置
JP6503543B2 (ja) * 2015-05-08 2019-04-24 国立研究開発法人産業技術総合研究所 遷移金属シリサイド膜、その製造方法及び製造装置並びに半導体装置
US10876206B2 (en) 2015-09-01 2020-12-29 Silcotek Corp. Thermal chemical vapor deposition coating
US20170211180A1 (en) * 2016-01-22 2017-07-27 Silcotek Corp. Diffusion-rate-limited thermal chemical vapor deposition coating
TWI646670B (zh) * 2017-04-07 2019-01-01 國立交通大學 二維材料的製作方法
US11161324B2 (en) 2017-09-13 2021-11-02 Silcotek Corp. Corrosion-resistant coated article and thermal chemical vapor deposition coating process
US11201227B2 (en) * 2018-04-27 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure with barrier layer and method for forming the same
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
US12473635B2 (en) 2020-06-03 2025-11-18 Silcotek Corp. Dielectric article

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4218291A (en) * 1978-02-28 1980-08-19 Vlsi Technology Research Association Process for forming metal and metal silicide films
JPS587821A (ja) * 1981-07-06 1983-01-17 Hitachi Ltd 金属とシリコンとの化合物層の形成方法
US4359490A (en) * 1981-07-13 1982-11-16 Fairchild Camera & Instrument Corp. Method for LPCVD co-deposition of metal and silicon to form metal silicide
DE3211752C2 (de) * 1982-03-30 1985-09-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum selektiven Abscheiden von aus Siliziden hochschmelzender Metalle bestehenden Schichtstrukturen auf im wesentlichen aus Silizium bestehenden Substraten und deren Verwendung
US4565157A (en) * 1983-03-29 1986-01-21 Genus, Inc. Method and apparatus for deposition of tungsten silicides
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
US4504521A (en) * 1984-03-22 1985-03-12 Rca Corporation LPCVD Deposition of tantalum silicide
DE3413064A1 (de) * 1984-04-06 1985-10-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von metallsilizidschichten durch abscheidung aus der gasphase bei vermindertem druck und deren verwendung
US4568565A (en) * 1984-05-14 1986-02-04 Allied Corporation Light induced chemical vapor deposition of conductive titanium silicide films

Also Published As

Publication number Publication date
EP0256337A1 (en) 1988-02-24
JPH0120228B2 (https=) 1989-04-14
US4684542A (en) 1987-08-04
JPS6345373A (ja) 1988-02-26
EP0256337B1 (en) 1991-06-05

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