DE3669549D1 - Verfahren zur herstellung einer halbleiteranordnung, die das kristalline abscheiden aus der gasphase von schichten auf ein substrat beinhaltet. - Google Patents

Verfahren zur herstellung einer halbleiteranordnung, die das kristalline abscheiden aus der gasphase von schichten auf ein substrat beinhaltet.

Info

Publication number
DE3669549D1
DE3669549D1 DE8686200790T DE3669549T DE3669549D1 DE 3669549 D1 DE3669549 D1 DE 3669549D1 DE 8686200790 T DE8686200790 T DE 8686200790T DE 3669549 T DE3669549 T DE 3669549T DE 3669549 D1 DE3669549 D1 DE 3669549D1
Authority
DE
Germany
Prior art keywords
layers
producing
substrate
gas phase
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686200790T
Other languages
English (en)
Inventor
Peter Michael Frijlink
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3669549D1 publication Critical patent/DE3669549D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control
DE8686200790T 1985-05-13 1986-05-05 Verfahren zur herstellung einer halbleiteranordnung, die das kristalline abscheiden aus der gasphase von schichten auf ein substrat beinhaltet. Expired - Lifetime DE3669549D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8507204A FR2581711B1 (fr) 1985-05-13 1985-05-13 Dispositif pour la regulation, l'interruption ou la commutation de fluides

Publications (1)

Publication Number Publication Date
DE3669549D1 true DE3669549D1 (de) 1990-04-19

Family

ID=9319210

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686200790T Expired - Lifetime DE3669549D1 (de) 1985-05-13 1986-05-05 Verfahren zur herstellung einer halbleiteranordnung, die das kristalline abscheiden aus der gasphase von schichten auf ein substrat beinhaltet.

Country Status (5)

Country Link
US (1) US4722911A (de)
EP (1) EP0206370B1 (de)
JP (1) JPS61264722A (de)
DE (1) DE3669549D1 (de)
FR (1) FR2581711B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5129360A (en) * 1990-01-24 1992-07-14 The United States Of America As Represented By The Secretary Of The Air Force Actively cooled effusion cell for chemical vapor deposition
US5268062A (en) * 1990-03-05 1993-12-07 Northrop Corporation Method and apparatus for carbon coating and boron-doped carbon coating a porous refractory substrate
US5141595A (en) * 1990-03-05 1992-08-25 Northrop Corporation Method and apparatus for carbon coating and boron-doped carbon coating
US6569250B2 (en) 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
US6896738B2 (en) 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
CN110512190B (zh) * 2019-09-25 2022-02-15 上海华力微电子有限公司 集成气动阀组的改装机构、气动阀组装置、气相沉积设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4368098A (en) * 1969-10-01 1983-01-11 Rockwell International Corporation Epitaxial composite and method of making
US4393013A (en) * 1970-05-20 1983-07-12 J. C. Schumacher Company Vapor mass flow control system
US4095004A (en) * 1975-03-31 1978-06-13 Hughes Aircraft Company Process for low temperature stoichiometric recrystallization of compound semiconductor films
US4201604A (en) * 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
FR2356271A1 (fr) * 1976-02-06 1978-01-20 Labo Electronique Physique Croissance acceleree en phase vapeur
US4190470A (en) * 1978-11-06 1980-02-26 M/A Com, Inc. Production of epitaxial layers by vapor deposition utilizing dynamically adjusted flow rates and gas phase concentrations
US4279670A (en) * 1979-08-06 1981-07-21 Raytheon Company Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material
DE3136895A1 (de) * 1981-09-17 1983-03-31 Philips Patentverwaltung Gmbh, 2000 Hamburg "vorrichtung zum verdampfen von ausgangsstoffen fuer die reaktive abscheidung aus der gasphase"
JPS6055478B2 (ja) * 1982-10-19 1985-12-05 松下電器産業株式会社 気相成長方法
US4517220A (en) * 1983-08-15 1985-05-14 Motorola, Inc. Deposition and diffusion source control means and method
US4588451A (en) * 1984-04-27 1986-05-13 Advanced Energy Fund Limited Partnership Metal organic chemical vapor deposition of 111-v compounds on silicon

Also Published As

Publication number Publication date
FR2581711B1 (fr) 1987-11-20
FR2581711A1 (fr) 1986-11-14
EP0206370A1 (de) 1986-12-30
US4722911A (en) 1988-02-02
JPS61264722A (ja) 1986-11-22
EP0206370B1 (de) 1990-03-14

Similar Documents

Publication Publication Date Title
DE3763902D1 (de) Verfahren zur herstellung eines halbleiterelementes, einschliesslich der abscheidung von schichten auf ein substrat aus der gasphase.
DE68901329D1 (de) Verfahren zur herstellung von elektrischen verbindungen durch ein substrat.
DE3876120T2 (de) Chemisches gasphasenabscheidungsverfahren zur herstellung einer kohlenstoffschicht.
ATA165181A (de) Verfahren zur herstellung einer freitragenden schicht auf einem plaettchenfoermigen, hochtemperaturbestaendigen substrat
DE68921559D1 (de) Verfahren zur Herstellung einer vom Substrat elektrisch isolierten Halbleiterschicht.
DE3686315D1 (de) Verfahren zur herstellung einer halbleiterstruktur.
DE3766940D1 (de) Verfahren zur herstellung einer planaren polymerischen bedeckung auf einem substrat.
DE59203585D1 (de) Verfahren zur Herstellung einer Solarzelle aus einer Substratscheibe.
DE3874411T2 (de) Verfahren zur herstellung einer halbleiteranordnung mit einer schicht aus titan-wolfram.
DE3767589D1 (de) Verfahren zur kristallzucht von kti0p04 aus einer loesung.
DE3868178D1 (de) Verfahren zur herstellung einer leitenden struktur auf einem substrat.
IT1216667B (it) Metodo per formare firlm di rivestimento di fluororesina mediante deposizione a vapore fisica.
DE3780562D1 (de) Chemischer dampfniederschlag mit waermestrahlung von einer isolierschicht auf ein substrat aus iii-v-material, verwendung zur herstellung einer mis-struktur.
DE3669549D1 (de) Verfahren zur herstellung einer halbleiteranordnung, die das kristalline abscheiden aus der gasphase von schichten auf ein substrat beinhaltet.
DE3779802T2 (de) Verfahren zur herstellung einer halbleiteranordnung.
DE3578618D1 (de) Verfahren zur herstellung von halbleiteranordnungen mit einer ueberlagerten schicht aus polykristallinem silizium.
DE68912638T2 (de) Verfahren zur Herstellung einer Kristallschicht auf einem Substrat.
DE3783418T2 (de) Verfahren zur herstellung einer halbleiterschaltung mit hoher durchbruchspannung.
DE3886863T2 (de) Verfahren zur Herstellung einer supraleitenden Oxydschicht auf einem Substrat.
DE3786364T2 (de) Verfahren zur Herstellung einer niedergeschlagenen Schicht.
DE3578263D1 (de) Verfahren zur herstellung einer halbleiteranordnung.
DE3784756T2 (de) Verfahren zur Herstellung einer niedergeschlagenen Schicht.
DE3689387T2 (de) Verfahren zur Herstellung einer Dünnschicht aus GaAs.
DE3887765D1 (de) Verfahren zur Herstellung einer dicken supraleitenden Schicht.
DE3685732T2 (de) Verfahren zur herstellung einer monokristallinen duennen schicht.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee