DE3736735C2 - - Google Patents
Info
- Publication number
- DE3736735C2 DE3736735C2 DE19873736735 DE3736735A DE3736735C2 DE 3736735 C2 DE3736735 C2 DE 3736735C2 DE 19873736735 DE19873736735 DE 19873736735 DE 3736735 A DE3736735 A DE 3736735A DE 3736735 C2 DE3736735 C2 DE 3736735C2
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- mos transistors
- source
- coupled mos
- differential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 238000009825 accumulation Methods 0.000 claims description 4
- 238000005070 sampling Methods 0.000 claims description 2
- 238000011084 recovery Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
- H03F3/45766—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction by using balancing means
- H03F3/45771—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction by using balancing means using switching means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
- H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
- H03K5/2481—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
- H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
- H03K5/249—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors using clock signals
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Measurement Of Current Or Voltage (AREA)
- Manipulation Of Pulses (AREA)
- Analogue/Digital Conversion (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US93013186A | 1986-11-12 | 1986-11-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3736735A1 DE3736735A1 (de) | 1988-06-01 |
| DE3736735C2 true DE3736735C2 (enrdf_load_stackoverflow) | 1990-05-03 |
Family
ID=25458959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19873736735 Granted DE3736735A1 (de) | 1986-11-12 | 1987-10-29 | Verfahren und schaltungsanordnung zum vermindern der erholzeit eines mos-differenz-spannungs-vergleichers |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS63139416A (enrdf_load_stackoverflow) |
| DE (1) | DE3736735A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2606565B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2198306B (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0451378A1 (en) * | 1990-04-10 | 1991-10-16 | Hewlett-Packard Limited | FET amplifying circuits and methods of operation |
| US5272395A (en) * | 1991-04-05 | 1993-12-21 | Analog Devices, Inc. | CMOS strobed comparator |
| WO2021200415A1 (ja) * | 2020-03-30 | 2021-10-07 | ソニーセミコンダクタソリューションズ株式会社 | コンパレータ及びアナログ－デジタル変換器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4028558A (en) * | 1976-06-21 | 1977-06-07 | International Business Machines Corporation | High accuracy MOS comparator |
| US4201947A (en) * | 1978-02-10 | 1980-05-06 | Rca Corporation | Long-tailed-pair connections of MOSFET's operated in sub-threshold region |
| US4323852A (en) * | 1979-11-29 | 1982-04-06 | University Of Iowa Research Foundation | Fast recovery electrode amplifier |
| US4320347A (en) * | 1980-10-01 | 1982-03-16 | American Microsystems, Inc. | Switched capacitor comparator |
| US4611130A (en) * | 1984-02-13 | 1986-09-09 | At&T Bell Laboratories | Floating input comparator with precharging of input parasitic capacitors |
-
1987
- 1987-10-29 DE DE19873736735 patent/DE3736735A1/de active Granted
- 1987-11-10 FR FR8715553A patent/FR2606565B1/fr not_active Expired - Lifetime
- 1987-11-11 JP JP28643587A patent/JPS63139416A/ja active Granted
- 1987-11-11 GB GB8726409A patent/GB2198306B/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2606565B1 (fr) | 1992-12-04 |
| FR2606565A1 (fr) | 1988-05-13 |
| GB8726409D0 (en) | 1987-12-16 |
| GB2198306B (en) | 1990-10-03 |
| DE3736735A1 (de) | 1988-06-01 |
| GB2198306A (en) | 1988-06-08 |
| JPH0431605B2 (enrdf_load_stackoverflow) | 1992-05-27 |
| JPS63139416A (ja) | 1988-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN |