JPS63139416A - 差動電圧コンパレータの動作方法及び電圧コンパレータ - Google Patents
差動電圧コンパレータの動作方法及び電圧コンパレータInfo
- Publication number
- JPS63139416A JPS63139416A JP28643587A JP28643587A JPS63139416A JP S63139416 A JPS63139416 A JP S63139416A JP 28643587 A JP28643587 A JP 28643587A JP 28643587 A JP28643587 A JP 28643587A JP S63139416 A JPS63139416 A JP S63139416A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- source
- mos transistor
- differential
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 8
- 238000005070 sampling Methods 0.000 claims description 2
- 238000011084 recovery Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 241000750042 Vini Species 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
- H03F3/45766—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction by using balancing means
- H03F3/45771—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction by using balancing means using switching means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
- H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
- H03K5/2481—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
- H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
- H03K5/249—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors using clock signals
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Measurement Of Current Or Voltage (AREA)
- Manipulation Of Pulses (AREA)
- Analogue/Digital Conversion (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US93013186A | 1986-11-12 | 1986-11-12 | |
| US930,131 | 1986-11-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63139416A true JPS63139416A (ja) | 1988-06-11 |
| JPH0431605B2 JPH0431605B2 (enrdf_load_stackoverflow) | 1992-05-27 |
Family
ID=25458959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28643587A Granted JPS63139416A (ja) | 1986-11-12 | 1987-11-11 | 差動電圧コンパレータの動作方法及び電圧コンパレータ |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS63139416A (enrdf_load_stackoverflow) |
| DE (1) | DE3736735A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2606565B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2198306B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2021200415A1 (enrdf_load_stackoverflow) * | 2020-03-30 | 2021-10-07 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0451378A1 (en) * | 1990-04-10 | 1991-10-16 | Hewlett-Packard Limited | FET amplifying circuits and methods of operation |
| US5272395A (en) * | 1991-04-05 | 1993-12-21 | Analog Devices, Inc. | CMOS strobed comparator |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4028558A (en) * | 1976-06-21 | 1977-06-07 | International Business Machines Corporation | High accuracy MOS comparator |
| US4201947A (en) * | 1978-02-10 | 1980-05-06 | Rca Corporation | Long-tailed-pair connections of MOSFET's operated in sub-threshold region |
| US4323852A (en) * | 1979-11-29 | 1982-04-06 | University Of Iowa Research Foundation | Fast recovery electrode amplifier |
| US4320347A (en) * | 1980-10-01 | 1982-03-16 | American Microsystems, Inc. | Switched capacitor comparator |
| US4611130A (en) * | 1984-02-13 | 1986-09-09 | At&T Bell Laboratories | Floating input comparator with precharging of input parasitic capacitors |
-
1987
- 1987-10-29 DE DE19873736735 patent/DE3736735A1/de active Granted
- 1987-11-10 FR FR8715553A patent/FR2606565B1/fr not_active Expired - Lifetime
- 1987-11-11 JP JP28643587A patent/JPS63139416A/ja active Granted
- 1987-11-11 GB GB8726409A patent/GB2198306B/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2021200415A1 (enrdf_load_stackoverflow) * | 2020-03-30 | 2021-10-07 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3736735C2 (enrdf_load_stackoverflow) | 1990-05-03 |
| FR2606565B1 (fr) | 1992-12-04 |
| FR2606565A1 (fr) | 1988-05-13 |
| GB8726409D0 (en) | 1987-12-16 |
| GB2198306B (en) | 1990-10-03 |
| DE3736735A1 (de) | 1988-06-01 |
| GB2198306A (en) | 1988-06-08 |
| JPH0431605B2 (enrdf_load_stackoverflow) | 1992-05-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
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| R250 | Receipt of annual fees |
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| R250 | Receipt of annual fees |
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| R250 | Receipt of annual fees |
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|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080527 Year of fee payment: 16 |