DE3709153C2 - - Google Patents
Info
- Publication number
- DE3709153C2 DE3709153C2 DE3709153A DE3709153A DE3709153C2 DE 3709153 C2 DE3709153 C2 DE 3709153C2 DE 3709153 A DE3709153 A DE 3709153A DE 3709153 A DE3709153 A DE 3709153A DE 3709153 C2 DE3709153 C2 DE 3709153C2
- Authority
- DE
- Germany
- Prior art keywords
- solar cell
- substrate
- layers
- converter
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 229920005570 flexible polymer Polymers 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 43
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 238000003475 lamination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 230000001609 comparable effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 241001676573 Minium Species 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61065341A JPS62221167A (ja) | 1986-03-24 | 1986-03-24 | 多層型薄膜太陽電池 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3709153A1 DE3709153A1 (de) | 1987-10-15 |
| DE3709153C2 true DE3709153C2 (US06582424-20030624-M00016.png) | 1989-11-09 |
Family
ID=13284145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19873709153 Granted DE3709153A1 (de) | 1986-03-24 | 1987-03-20 | Mehrlagige duennfilmsolarzelle |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4784701A (US06582424-20030624-M00016.png) |
| JP (1) | JPS62221167A (US06582424-20030624-M00016.png) |
| DE (1) | DE3709153A1 (US06582424-20030624-M00016.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4208710A1 (de) * | 1992-03-18 | 1993-09-30 | Flachglas Solartechnik Gmbh | Bauelement mit Solarzellen |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4948436A (en) * | 1988-02-05 | 1990-08-14 | Siemens Aktiengesellschaft | Thin-film solar cell arrangement |
| CA2024662A1 (en) * | 1989-09-08 | 1991-03-09 | Robert Oswald | Monolithic series and parallel connected photovoltaic module |
| JPH03181180A (ja) * | 1989-12-11 | 1991-08-07 | Canon Inc | 太陽電池およびその製造方法 |
| WO1993015527A1 (de) * | 1992-02-04 | 1993-08-05 | Siemens Aktiengesellschaft | Integriert verschaltetes stapelzellensolarmodul |
| US6548751B2 (en) * | 2000-12-12 | 2003-04-15 | Solarflex Technologies, Inc. | Thin film flexible solar cell |
| US8314327B2 (en) * | 2005-11-06 | 2012-11-20 | Banpil Photonics, Inc. | Photovoltaic cells based on nano or micro-scale structures |
| US7235736B1 (en) | 2006-03-18 | 2007-06-26 | Solyndra, Inc. | Monolithic integration of cylindrical solar cells |
| US20080302418A1 (en) * | 2006-03-18 | 2008-12-11 | Benyamin Buller | Elongated Photovoltaic Devices in Casings |
| US20080047599A1 (en) * | 2006-03-18 | 2008-02-28 | Benyamin Buller | Monolithic integration of nonplanar solar cells |
| US20100326429A1 (en) * | 2006-05-19 | 2010-12-30 | Cumpston Brian H | Hermetically sealed cylindrical solar cells |
| KR20070101917A (ko) * | 2006-04-12 | 2007-10-18 | 엘지전자 주식회사 | 박막형 태양전지와 그의 제조방법 |
| US20100132765A1 (en) * | 2006-05-19 | 2010-06-03 | Cumpston Brian H | Hermetically sealed solar cells |
| US20080083449A1 (en) * | 2006-10-06 | 2008-04-10 | Solyndra, Inc., A Delaware Corporation | Sealed photovoltaic apparatus |
| CN101569018B (zh) * | 2006-10-06 | 2013-06-12 | 索林塔有限公司 | 密封光伏设备 |
| US7982127B2 (en) | 2006-12-29 | 2011-07-19 | Industrial Technology Research Institute | Thin film solar cell module of see-through type |
| KR20080079058A (ko) * | 2007-02-26 | 2008-08-29 | 엘지전자 주식회사 | 박막형 태양전지 모듈과 그의 제조방법 |
| JP4966848B2 (ja) * | 2007-12-27 | 2012-07-04 | 三洋電機株式会社 | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
| EP2311101B1 (en) * | 2008-07-03 | 2012-11-21 | Imec | Photovoltaic module and the processing thereof |
| US8952473B2 (en) | 2008-09-29 | 2015-02-10 | Sol Chip Ltd. | Integrated circuit combination of a target integrated circuit and a plurality of cells connected thereto using the top conductive layer |
| US9379265B2 (en) | 2008-09-29 | 2016-06-28 | Sol Chip Ltd. | Integrated circuit combination of a target integrated circuit, photovoltaic cells and light sensitive diodes connected to enable a self-sufficient light detector device |
| US8921967B2 (en) | 2008-09-29 | 2014-12-30 | Sol Chip Ltd. | Integrated circuit combination of a target integrated circuit and a plurality of photovoltaic cells connected thereto using the top conductive layer |
| US8835748B2 (en) | 2009-01-06 | 2014-09-16 | Sunlight Photonics Inc. | Multi-junction PV module |
| DE102009007908A1 (de) * | 2009-02-06 | 2010-08-12 | Zylum Beteiligungsgesellschaft Mbh & Co. Patente Ii Kg | Verfahren zur Herstellung eines Dünnschicht-Photovoltaik-Systems und Dünnschicht-Photovoltaik-System |
| IT1392995B1 (it) * | 2009-02-12 | 2012-04-02 | St Microelectronics Srl | Pannello solare con due moduli fotovoltaici multicellulari monolitici di diversa tecnologia |
| JP5379845B2 (ja) * | 2009-03-02 | 2013-12-25 | 株式会社カネカ | 薄膜太陽電池モジュール |
| WO2010107033A1 (ja) * | 2009-03-18 | 2010-09-23 | 三菱電機株式会社 | 光電変換装置およびその製造方法 |
| KR101732397B1 (ko) * | 2009-06-05 | 2017-05-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전 변환 장치 및 그의 제작 방법 |
| WO2010142575A2 (en) * | 2009-06-11 | 2010-12-16 | Oerlikon Solar Ag, Trübbach | Tandem solar cell integrated in a double insulating glass window for building integrated photovoltaic applications |
| FR2948498B1 (fr) * | 2009-07-23 | 2012-06-15 | Solsia | Panneau solaire photovoltaique a diodes en couches minces |
| KR101291277B1 (ko) * | 2010-11-04 | 2013-07-30 | 엘지전자 주식회사 | 박막형 태양전지 모듈 및 그 제조방법 |
| EP2461362A1 (fr) * | 2010-12-06 | 2012-06-06 | Solsia | Panneau solaire photovoltaïque à diodes en couches minces |
| TWI451580B (zh) * | 2011-09-26 | 2014-09-01 | Ind Tech Res Inst | 薄膜太陽能電池之製法 |
| US9147794B2 (en) * | 2011-11-30 | 2015-09-29 | First Solar, Inc. | Three terminal thin film photovoltaic module and their methods of manufacture |
| JP6120450B2 (ja) * | 2012-09-25 | 2017-04-26 | シャープ株式会社 | 太陽電池モジュールおよび太陽光発電装置 |
| US9640331B2 (en) * | 2013-03-22 | 2017-05-02 | Sharp Laboratories Of America, Inc. | Solid state dye-sensitized solar cell tandem module |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4316049A (en) * | 1979-08-28 | 1982-02-16 | Rca Corporation | High voltage series connected tandem junction solar battery |
| JPS5927588B2 (ja) * | 1980-05-15 | 1984-07-06 | 松下電工株式会社 | 電気かみそりのスイツチ構造 |
| US4295002A (en) * | 1980-06-23 | 1981-10-13 | International Business Machines Corporation | Heterojunction V-groove multijunction solar cell |
| JPS6175567A (ja) * | 1984-09-20 | 1986-04-17 | Sanyo Electric Co Ltd | 光起電力装置 |
| JPH0630163A (ja) * | 1992-06-24 | 1994-02-04 | Murata Mach Ltd | ファクシミリ装置 |
-
1986
- 1986-03-24 JP JP61065341A patent/JPS62221167A/ja active Granted
-
1987
- 1987-03-20 DE DE19873709153 patent/DE3709153A1/de active Granted
- 1987-03-24 US US06/029,682 patent/US4784701A/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4208710A1 (de) * | 1992-03-18 | 1993-09-30 | Flachglas Solartechnik Gmbh | Bauelement mit Solarzellen |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0577308B2 (US06582424-20030624-M00016.png) | 1993-10-26 |
| JPS62221167A (ja) | 1987-09-29 |
| DE3709153A1 (de) | 1987-10-15 |
| US4784701A (en) | 1988-11-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |