DE3706127C2 - - Google Patents

Info

Publication number
DE3706127C2
DE3706127C2 DE3706127A DE3706127A DE3706127C2 DE 3706127 C2 DE3706127 C2 DE 3706127C2 DE 3706127 A DE3706127 A DE 3706127A DE 3706127 A DE3706127 A DE 3706127A DE 3706127 C2 DE3706127 C2 DE 3706127C2
Authority
DE
Germany
Prior art keywords
layer
resist
etching
reactive ion
ion etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3706127A
Other languages
German (de)
English (en)
Other versions
DE3706127A1 (de
Inventor
Takuo Sugano
Hideharu Tokio/Tokyo Jp Miyake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Tokyo NUC
Original Assignee
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Tokyo NUC filed Critical University of Tokyo NUC
Publication of DE3706127A1 publication Critical patent/DE3706127A1/de
Application granted granted Critical
Publication of DE3706127C2 publication Critical patent/DE3706127C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/95—Multilayer mask including nonradiation sensitive layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
DE19873706127 1986-04-28 1987-02-25 Diskontinuierliches aetzverfahren Granted DE3706127A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61097002A JPS62253785A (ja) 1986-04-28 1986-04-28 間欠的エツチング方法

Publications (2)

Publication Number Publication Date
DE3706127A1 DE3706127A1 (de) 1987-10-29
DE3706127C2 true DE3706127C2 (US06211527-20010403-C00003.png) 1989-01-19

Family

ID=14180009

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873706127 Granted DE3706127A1 (de) 1986-04-28 1987-02-25 Diskontinuierliches aetzverfahren

Country Status (3)

Country Link
US (1) US4790903A (US06211527-20010403-C00003.png)
JP (1) JPS62253785A (US06211527-20010403-C00003.png)
DE (1) DE3706127A1 (US06211527-20010403-C00003.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
DE19919832A1 (de) * 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
US8293430B2 (en) 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4915779A (en) * 1988-08-23 1990-04-10 Motorola Inc. Residue-free plasma etch of high temperature AlCu
US4945069A (en) * 1988-12-16 1990-07-31 Texas Instruments, Incorporated Organic space holder for trench processing
US5169494A (en) * 1989-03-27 1992-12-08 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
US5086248A (en) * 1989-08-18 1992-02-04 Galileo Electro-Optics Corporation Microchannel electron multipliers
US5205902A (en) * 1989-08-18 1993-04-27 Galileo Electro-Optics Corporation Method of manufacturing microchannel electron multipliers
ATE135496T1 (de) * 1990-03-27 1996-03-15 Canon Kk Dünnschicht-halbleiterbauelement
US5085676A (en) * 1990-12-04 1992-02-04 E. I. Du Pont De Nemours And Company Novel multicomponent fluid separation membranes
JP3041972B2 (ja) * 1991-01-10 2000-05-15 富士通株式会社 半導体装置の製造方法
JPH07183194A (ja) * 1993-12-24 1995-07-21 Sony Corp 多層レジストパターン形成方法
US5733657A (en) * 1994-10-11 1998-03-31 Praxair Technology, Inc. Method of preparing membranes from blends of polymers
AUPP590798A0 (en) * 1998-09-14 1998-10-08 Commonwealth Scientific And Industrial Research Organisation Method of manufacture of high temperature superconductors
AU773535B2 (en) * 1998-09-14 2004-05-27 Commonwealth Scientific And Industrial Research Organisation Superconducting device
US6383938B2 (en) 1999-04-21 2002-05-07 Alcatel Method of anisotropic etching of substrates
US6291357B1 (en) 1999-10-06 2001-09-18 Applied Materials, Inc. Method and apparatus for etching a substrate with reduced microloading
US6849554B2 (en) 2002-05-01 2005-02-01 Applied Materials, Inc. Method of etching a deep trench having a tapered profile in silicon
US7154086B2 (en) * 2003-03-19 2006-12-26 Burle Technologies, Inc. Conductive tube for use as a reflectron lens
US20040224524A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Maintaining the dimensions of features being etched on a lithographic mask
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US7352064B2 (en) * 2004-11-04 2008-04-01 International Business Machines Corporation Multiple layer resist scheme implementing etch recipe particular to each layer
US7879510B2 (en) 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching
US7790334B2 (en) 2005-01-27 2010-09-07 Applied Materials, Inc. Method for photomask plasma etching using a protected mask
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
US20080073516A1 (en) * 2006-03-10 2008-03-27 Laprade Bruce N Resistive glass structures used to shape electric fields in analytical instruments
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
US7786019B2 (en) * 2006-12-18 2010-08-31 Applied Materials, Inc. Multi-step photomask etching with chlorine for uniformity control
US9941121B1 (en) 2017-01-24 2018-04-10 International Business Machines Corporation Selective dry etch for directed self assembly of block copolymers
CN115440585A (zh) * 2022-09-01 2022-12-06 中国科学院光电技术研究所 金属纳米结构及其离子束刻蚀加工方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS563669A (en) * 1979-06-20 1981-01-14 Fuji Denshi Kogyo Kk Ion-treating method
US4333814A (en) * 1979-12-26 1982-06-08 Western Electric Company, Inc. Methods and apparatus for improving an RF excited reactive gas plasma
JPS56123381A (en) * 1980-01-24 1981-09-28 Fujitsu Ltd Method and device for plasma etching
US4417948A (en) * 1982-07-09 1983-11-29 International Business Machines Corporation Self developing, photoetching of polyesters by far UV radiation
US4587184A (en) * 1983-07-27 1986-05-06 Siemens Aktiengesellschaft Method for manufacturing accurate structures with a high aspect ratio and particularly for manufacturing X-ray absorber masks

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
DE19919832A1 (de) * 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
US8293430B2 (en) 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication

Also Published As

Publication number Publication date
JPS641555B2 (US06211527-20010403-C00003.png) 1989-01-11
DE3706127A1 (de) 1987-10-29
US4790903A (en) 1988-12-13
JPS62253785A (ja) 1987-11-05

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8380 Miscellaneous part iii

Free format text: DAS AKTENZEICHEN AUF DER TITELSEITE DER PATENTSCHRIFT LAUTET RICHTIG : P 37 06 127.5-45

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee