DE3687732T2 - Verfahren um eine hochreine oxydschicht auf einem halbleitersubstrat herzustellen. - Google Patents

Verfahren um eine hochreine oxydschicht auf einem halbleitersubstrat herzustellen.

Info

Publication number
DE3687732T2
DE3687732T2 DE8686113443T DE3687732T DE3687732T2 DE 3687732 T2 DE3687732 T2 DE 3687732T2 DE 8686113443 T DE8686113443 T DE 8686113443T DE 3687732 T DE3687732 T DE 3687732T DE 3687732 T2 DE3687732 T2 DE 3687732T2
Authority
DE
Germany
Prior art keywords
producing
semiconductor substrate
oxide layer
high purity
purity oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686113443T
Other languages
English (en)
Other versions
DE3687732D1 (de
Inventor
Samuel Emil Blum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE3687732D1 publication Critical patent/DE3687732D1/de
Application granted granted Critical
Publication of DE3687732T2 publication Critical patent/DE3687732T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control
DE8686113443T 1985-10-10 1986-09-30 Verfahren um eine hochreine oxydschicht auf einem halbleitersubstrat herzustellen. Expired - Fee Related DE3687732T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/786,194 US4606935A (en) 1985-10-10 1985-10-10 Process and apparatus for producing high purity oxidation on a semiconductor substrate

Publications (2)

Publication Number Publication Date
DE3687732D1 DE3687732D1 (de) 1993-03-25
DE3687732T2 true DE3687732T2 (de) 1993-08-19

Family

ID=25137860

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686113443T Expired - Fee Related DE3687732T2 (de) 1985-10-10 1986-09-30 Verfahren um eine hochreine oxydschicht auf einem halbleitersubstrat herzustellen.

Country Status (4)

Country Link
US (2) US4606935A (de)
EP (1) EP0218177B1 (de)
JP (1) JPH0640544B2 (de)
DE (1) DE3687732T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3677455D1 (de) * 1985-09-30 1991-03-14 Siemens Ag Verfahren zur begrenzung von ausbruechen beim saegen einer halbleiterscheibe.
DE3540469A1 (de) * 1985-11-14 1987-05-21 Wacker Chemitronic Verfahren zum schutz von polierten siliciumoberflaechen
US4839145A (en) * 1986-08-27 1989-06-13 Massachusetts Institute Of Technology Chemical vapor deposition reactor
US5167717A (en) * 1989-02-15 1992-12-01 Charles Boitnott Apparatus and method for processing a semiconductor wafer
EP0405205A3 (en) * 1989-06-12 1992-05-13 Seiko Instruments Inc. Method of producing mos type semiconductor device
JPH0752716B2 (ja) * 1990-06-05 1995-06-05 松下電器産業株式会社 熱分解セル
US5721176A (en) * 1992-05-29 1998-02-24 Olin Corporation Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates
EP1790703B1 (de) * 1998-04-24 2014-07-30 JGC Catalysts and Chemicals Ltd. Beschichtungsflüssigkeit für Filme auf Silika-Basis mit niedriger Dielektrizitätskonstante und mit diesem Film beschichtetes Substrat
US7208195B2 (en) * 2002-03-27 2007-04-24 Ener1Group, Inc. Methods and apparatus for deposition of thin films
GB0516477D0 (en) * 2005-08-11 2005-09-14 Optical Reference Systems Ltd Apparatus for measuring semiconductor physical characteristics

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1092883A (en) * 1963-06-10 1967-11-29 Laporte Titanium Ltd Improvements in and relating to the manufacture of oxides
US3446659A (en) * 1966-09-16 1969-05-27 Texas Instruments Inc Apparatus and process for growing noncontaminated thermal oxide on silicon
US4054641A (en) * 1976-05-07 1977-10-18 John S. Pennish Method for making vitreous silica
DE2849240C2 (de) * 1978-11-13 1983-01-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen CVD-Beschichtungsvorrichtung für Kleinteile und ihre Verwendung
US4409260A (en) * 1979-08-15 1983-10-11 Hughes Aircraft Company Process for low-temperature surface layer oxidation of a semiconductor substrate
US4347431A (en) * 1980-07-25 1982-08-31 Bell Telephone Laboratories, Inc. Diffusion furnace
FR2488443A1 (fr) * 1980-08-11 1982-02-12 Western Electric Co Procede et dispositif d'oxydation de tranches de silicium
DE3142568A1 (de) * 1981-10-27 1983-05-05 Bruno 7407 Rottenburg Herrmann Verstellbarer anschlag
DE3142548A1 (de) * 1981-10-27 1983-05-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von oxidschichten auf aus silizium oder anderem oxidierbarem material bestehenden substratscheiben in extrem trockener sauerstoffatmosphaere bzw. in sauerstoffatmosphaere mit chlorwasserstoffgas-zusaetzen

Also Published As

Publication number Publication date
DE3687732D1 (de) 1993-03-25
US4674442A (en) 1987-06-23
JPH0640544B2 (ja) 1994-05-25
EP0218177B1 (de) 1993-02-10
US4606935A (en) 1986-08-19
EP0218177A2 (de) 1987-04-15
JPS6286829A (ja) 1987-04-21
EP0218177A3 (en) 1989-04-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee