DE3684679D1 - Keramische substrate und verfahren zur herstellung derselben. - Google Patents

Keramische substrate und verfahren zur herstellung derselben.

Info

Publication number
DE3684679D1
DE3684679D1 DE8686309561T DE3684679T DE3684679D1 DE 3684679 D1 DE3684679 D1 DE 3684679D1 DE 8686309561 T DE8686309561 T DE 8686309561T DE 3684679 T DE3684679 T DE 3684679T DE 3684679 D1 DE3684679 D1 DE 3684679D1
Authority
DE
Germany
Prior art keywords
producing
same
ceramic substrates
substrates
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686309561T
Other languages
English (en)
Inventor
Nobuo C O Toshiba Corpor Iwase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3684679D1 publication Critical patent/DE3684679D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0036—Laser treatment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1136—Conversion of insulating material into conductive material, e.g. by pyrolysis
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
DE8686309561T 1985-12-11 1986-12-09 Keramische substrate und verfahren zur herstellung derselben. Expired - Lifetime DE3684679D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60278154A JPS62136897A (ja) 1985-12-11 1985-12-11 セラミツク回路基板の製造方法

Publications (1)

Publication Number Publication Date
DE3684679D1 true DE3684679D1 (de) 1992-05-07

Family

ID=17593339

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686309561T Expired - Lifetime DE3684679D1 (de) 1985-12-11 1986-12-09 Keramische substrate und verfahren zur herstellung derselben.

Country Status (4)

Country Link
US (1) US4797530A (de)
EP (1) EP0227371B1 (de)
JP (1) JPS62136897A (de)
DE (1) DE3684679D1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890702417A (ko) * 1987-09-14 1989-12-23 에이.더블유.카람벨라스 알루미늄 질화물 세라믹을 분리시키는 방법에 의한 유도 금속화 방법
KR930006124B1 (ko) * 1988-09-13 1993-07-07 가부시끼가이샤 도시바 질화 알루미늄 기판 및 그 제조방법
DE3835794A1 (de) * 1988-10-20 1990-04-26 Siemens Ag Verfahren zur herstellung einer strukturierten keramikfolie bzw. eines aus solchen folien aufgebauten keramikkoerpers
US5070393A (en) * 1988-12-23 1991-12-03 Kabushiki Kaisha Toshiba Aluminum nitride substrate for formation of thin-film conductor layer and semiconductor device using the substrate
DE3942472A1 (de) * 1989-12-22 1991-06-27 Asea Brown Boveri Beschichtungsverfahren
CA2009514C (en) * 1990-02-07 1995-04-25 Mahmud U. Islam Laser rough and finish machining of hard materials
US5153408A (en) * 1990-10-31 1992-10-06 International Business Machines Corporation Method and structure for repairing electrical lines
DE4342258A1 (de) * 1993-12-10 1995-06-14 Resma Gmbh Verfahren zur Erzeugung elektrisch leitender Bereiche an keramischen Werkstücken
DE4401612A1 (de) * 1994-01-20 1995-07-27 Resma Gmbh Verfahren und Vorrichtung zur Erzeugung elektrisch leitender Bereiche auf Metallverbindungen enthaltenden isolierenden Keramikwerkstücken
US5889234A (en) * 1996-11-21 1999-03-30 Eastman Kodak Company Zirconia ceramic members with laser induced electrical conductivity in surfaces thereof
IL143442A0 (en) * 2001-05-30 2002-04-21 Target Technology Ct Ceramic heat-generating element and method for manufacturing thereof
EP1845170A3 (de) * 2006-04-12 2007-11-21 LPKF Laser & Electronics AG Verfahren zur Herstellung einer Leiterbahnstruktur sowie eine derart hergestellte Leiterbahnstruktur
DE102006017630A1 (de) * 2006-04-12 2007-10-18 Lpkf Laser & Electronics Ag Verfahren zur Herstellung einer Leiterbahnstruktur sowie eine derart hergestellte Leiterbahnstruktur
JP4997548B2 (ja) * 2006-08-07 2012-08-08 独立行政法人理化学研究所 金属配線形成方法
CN104882513A (zh) * 2009-04-22 2015-09-02 泰特拉桑有限公司 通过局部激光辅助转变太阳能电池中的功能膜得到的局部金属接触
JP6111035B2 (ja) * 2012-09-27 2017-04-05 セーレン株式会社 セラミックスの表面改質方法
DE102016200098A1 (de) * 2015-01-08 2016-07-14 Ceramtec Gmbh Leitfähige Verbindung von lasereingebrachten Signalleiterbahnen mit pastenmetallisierten Pads auf AlN Substraten
JP6776879B2 (ja) * 2016-12-22 2020-10-28 日亜化学工業株式会社 セラミック基板の製造方法、発光装置の製造方法
TWI662872B (zh) * 2018-01-26 2019-06-11 謝孟修 陶瓷電路板及其製法
IT201900005156A1 (it) * 2019-04-05 2020-10-05 St Microelectronics Srl Procedimento per fabbricare leadframe per dispositivi a semiconduttore
IT201900024292A1 (it) 2019-12-17 2021-06-17 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3056881A (en) * 1961-06-07 1962-10-02 United Aircraft Corp Method of making electrical conductor device
FR2332839A1 (fr) * 1974-12-03 1977-06-24 Arnaud Jean Procede et appareil de polissage electromagnetique
IT1127303B (it) * 1979-12-20 1986-05-21 Oronzio De Nora Impianti Tprocedimento per la preparazione di ossidi misti catalitici
JPS61136976A (ja) * 1984-12-07 1986-06-24 株式会社日立製作所 非酸化物系セラミツクス基板への電気回路形成方法
JPS61156895A (ja) * 1984-12-28 1986-07-16 日本電気株式会社 配線基板の製造方法

Also Published As

Publication number Publication date
JPS62136897A (ja) 1987-06-19
EP0227371B1 (de) 1992-04-01
EP0227371A1 (de) 1987-07-01
US4797530A (en) 1989-01-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee