DE3683575D1 - Leitfaehiges und durchsichtiges substrat fuer ein photoelektrisches element. - Google Patents

Leitfaehiges und durchsichtiges substrat fuer ein photoelektrisches element.

Info

Publication number
DE3683575D1
DE3683575D1 DE8686402059T DE3683575T DE3683575D1 DE 3683575 D1 DE3683575 D1 DE 3683575D1 DE 8686402059 T DE8686402059 T DE 8686402059T DE 3683575 T DE3683575 T DE 3683575T DE 3683575 D1 DE3683575 D1 DE 3683575D1
Authority
DE
Germany
Prior art keywords
conductive
transparent substrate
photoelectric element
microns
halogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686402059T
Other languages
German (de)
English (en)
Inventor
Masahiro Hirata
Masao Misonou
Hideo Kawahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Saint Gobain Vitrage SA
Original Assignee
Saint Gobain Vitrage SA
Saint Gobain Vitrage International SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Vitrage SA, Saint Gobain Vitrage International SA filed Critical Saint Gobain Vitrage SA
Application granted granted Critical
Publication of DE3683575D1 publication Critical patent/DE3683575D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C03C17/2453—Coating containing SnO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Surface Treatment Of Glass (AREA)
  • Liquid Crystal (AREA)
DE8686402059T 1985-09-20 1986-09-19 Leitfaehiges und durchsichtiges substrat fuer ein photoelektrisches element. Expired - Fee Related DE3683575D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60208363A JPS6269405A (ja) 1985-09-20 1985-09-20 光電素子用透明導電基板

Publications (1)

Publication Number Publication Date
DE3683575D1 true DE3683575D1 (de) 1992-03-05

Family

ID=16555049

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686402059T Expired - Fee Related DE3683575D1 (de) 1985-09-20 1986-09-19 Leitfaehiges und durchsichtiges substrat fuer ein photoelektrisches element.

Country Status (5)

Country Link
EP (1) EP0216703B1 (enExample)
JP (1) JPS6269405A (enExample)
AT (1) ATE71925T1 (enExample)
DE (1) DE3683575D1 (enExample)
ES (1) ES2003352A6 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07112076B2 (ja) * 1987-05-07 1995-11-29 日本板硝子株式会社 二層構造を有する透明導電膜体
JP2853125B2 (ja) * 1988-03-17 1999-02-03 日本板硝子株式会社 透明導電膜の製造方法
DE19715048C2 (de) * 1997-04-11 1999-08-19 Bosch Gmbh Robert Verfahren zum Strukturieren einer transparenten, elektrisch leitfähigen Schicht
US6602606B1 (en) * 1999-05-18 2003-08-05 Nippon Sheet Glass Co., Ltd. Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same
CN104310790A (zh) * 2014-09-28 2015-01-28 中国建材国际工程集团有限公司 大面积透明导电膜玻璃的制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534668A (en) * 1978-09-04 1980-03-11 Toshiba Corp Forming method for transparent conductive composite film
JPS59136477A (ja) * 1982-12-23 1984-08-06 Nippon Sheet Glass Co Ltd 基体に酸化錫膜を形成する方法
JPS59162269A (ja) * 1983-03-07 1984-09-13 Nippon Sheet Glass Co Ltd 基体に酸化錫膜を形成する方法

Also Published As

Publication number Publication date
ATE71925T1 (de) 1992-02-15
EP0216703B1 (fr) 1992-01-22
EP0216703A3 (en) 1989-04-26
EP0216703A2 (fr) 1987-04-01
JPH0572686B2 (enExample) 1993-10-12
JPS6269405A (ja) 1987-03-30
ES2003352A6 (es) 1991-03-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee