DE3631136C2 - - Google Patents
Info
- Publication number
- DE3631136C2 DE3631136C2 DE19863631136 DE3631136A DE3631136C2 DE 3631136 C2 DE3631136 C2 DE 3631136C2 DE 19863631136 DE19863631136 DE 19863631136 DE 3631136 A DE3631136 A DE 3631136A DE 3631136 C2 DE3631136 C2 DE 3631136C2
- Authority
- DE
- Germany
- Prior art keywords
- zone
- heavily doped
- outer zone
- doped
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000002019 doping agent Substances 0.000 claims description 11
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 239000002800 charge carrier Substances 0.000 description 8
- 230000001419 dependent effect Effects 0.000 description 5
- 230000006378 damage Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Rectifiers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19863631136 DE3631136A1 (de) | 1986-09-12 | 1986-09-12 | Diode mit weichem abrissverhalten |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19863631136 DE3631136A1 (de) | 1986-09-12 | 1986-09-12 | Diode mit weichem abrissverhalten |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3631136A1 DE3631136A1 (de) | 1988-03-24 |
DE3631136C2 true DE3631136C2 (bg) | 1992-09-17 |
Family
ID=6309477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19863631136 Granted DE3631136A1 (de) | 1986-09-12 | 1986-09-12 | Diode mit weichem abrissverhalten |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3631136A1 (bg) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4438896A1 (de) * | 1994-10-31 | 1996-05-02 | Abb Management Ag | Halbleiterdiode mit Elektronenspender |
DE19843893A1 (de) * | 1998-09-24 | 2000-04-06 | Siemens Ag | Leistungshalbleiterdiode |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3823795A1 (de) * | 1988-07-14 | 1990-01-18 | Semikron Elektronik Gmbh | Schnelle leistungsdiode |
DE3832748A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterdiode |
DE3832732A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterdiode |
DE3939324A1 (de) * | 1989-11-28 | 1991-05-29 | Eupec Gmbh & Co Kg | Leistungs-halbleiterbauelement mit emitterkurzschluessen |
DE3942967A1 (de) * | 1989-12-23 | 1991-06-27 | Semikron Elektronik Gmbh | Schnelle leistungsdiode |
DE4135258C2 (de) * | 1991-10-25 | 1996-05-02 | Semikron Elektronik Gmbh | Schnelle Leistungsdiode |
DE4137840A1 (de) * | 1991-11-16 | 1993-06-03 | Asea Brown Boveri | Halbleiterschalter zum sperren hoher spannungen |
DE4201183A1 (de) * | 1992-01-17 | 1993-07-22 | Eupec Gmbh & Co Kg | Leistungsdiode |
DE4305040C2 (de) * | 1993-02-18 | 1999-07-22 | Eupec Gmbh & Co Kg | Freilaufdiode für einen GTO-Thyristor |
DE102004044141A1 (de) | 2004-09-13 | 2006-03-30 | Robert Bosch Gmbh | Halbleiteranordnung zur Spannungsbegrenzung |
EP2073274A1 (en) * | 2007-12-19 | 2009-06-24 | ABB Technology AG | Diode |
US8466491B2 (en) | 2011-05-12 | 2013-06-18 | Infineon Technologies Austria Ag | Semiconductor component with improved softness |
US9324783B2 (en) | 2014-09-30 | 2016-04-26 | Infineon Technologies Ag | Soft switching semiconductor device and method for producing thereof |
EP3948956A1 (en) | 2019-04-02 | 2022-02-09 | Hitachi Energy Switzerland AG | Segmented power diode structure with improved reverse recovery |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2506102C3 (de) * | 1975-02-13 | 1982-03-25 | Siemens AG, 1000 Berlin und 8000 München | Halbleitergleichrichter |
JPS5860577A (ja) * | 1981-10-07 | 1983-04-11 | Hitachi Ltd | 半導体装置 |
US4641174A (en) * | 1983-08-08 | 1987-02-03 | General Electric Company | Pinch rectifier |
GB2151844A (en) * | 1983-12-20 | 1985-07-24 | Philips Electronic Associated | Semiconductor devices |
DE3435464A1 (de) * | 1984-09-27 | 1986-04-10 | Robert Bosch Gmbh, 7000 Stuttgart | Gleichrichterdiode |
-
1986
- 1986-09-12 DE DE19863631136 patent/DE3631136A1/de active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4438896A1 (de) * | 1994-10-31 | 1996-05-02 | Abb Management Ag | Halbleiterdiode mit Elektronenspender |
US5619047A (en) * | 1994-10-31 | 1997-04-08 | Asea Brown Boveri Ag | Semiconductor diode in which electrons are injected into a reverse current |
DE19843893A1 (de) * | 1998-09-24 | 2000-04-06 | Siemens Ag | Leistungshalbleiterdiode |
Also Published As
Publication number | Publication date |
---|---|
DE3631136A1 (de) | 1988-03-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition |