DE3620223A1 - Einrichtung zum herstellen einer halbleitervorrichtung - Google Patents

Einrichtung zum herstellen einer halbleitervorrichtung

Info

Publication number
DE3620223A1
DE3620223A1 DE19863620223 DE3620223A DE3620223A1 DE 3620223 A1 DE3620223 A1 DE 3620223A1 DE 19863620223 DE19863620223 DE 19863620223 DE 3620223 A DE3620223 A DE 3620223A DE 3620223 A1 DE3620223 A1 DE 3620223A1
Authority
DE
Germany
Prior art keywords
semiconductor
projections
producing
semiconductor substrates
thin layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19863620223
Other languages
German (de)
English (en)
Other versions
DE3620223C2 (enExample
Inventor
Makoto Hirayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3620223A1 publication Critical patent/DE3620223A1/de
Application granted granted Critical
Publication of DE3620223C2 publication Critical patent/DE3620223C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE19863620223 1985-07-15 1986-06-16 Einrichtung zum herstellen einer halbleitervorrichtung Granted DE3620223A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60156582A JPS6216516A (ja) 1985-07-15 1985-07-15 半導体製造装置

Publications (2)

Publication Number Publication Date
DE3620223A1 true DE3620223A1 (de) 1987-01-22
DE3620223C2 DE3620223C2 (enExample) 1990-02-15

Family

ID=15630911

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863620223 Granted DE3620223A1 (de) 1985-07-15 1986-06-16 Einrichtung zum herstellen einer halbleitervorrichtung

Country Status (3)

Country Link
US (1) US4802842A (enExample)
JP (1) JPS6216516A (enExample)
DE (1) DE3620223A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0342821A (ja) * 1989-07-11 1991-02-25 Mitsubishi Electric Corp 半導体ウエハの熱処理方法およびそのためのウエハハンガーならびに半導体ウエハ
JP3204699B2 (ja) * 1990-11-30 2001-09-04 株式会社東芝 熱処理装置
JP3245246B2 (ja) * 1993-01-27 2002-01-07 東京エレクトロン株式会社 熱処理装置
JP3151118B2 (ja) * 1995-03-01 2001-04-03 東京エレクトロン株式会社 熱処理装置
US5931666A (en) * 1998-02-27 1999-08-03 Saint-Gobain Industrial Ceramics, Inc. Slip free vertical rack design having rounded horizontal arms
JP3487497B2 (ja) * 1998-06-24 2004-01-19 岩手東芝エレクトロニクス株式会社 被処理体収容治具及びこれを用いた熱処理装置
US7661544B2 (en) * 2007-02-01 2010-02-16 Tokyo Electron Limited Semiconductor wafer boat for batch processing
USD666709S1 (en) * 2010-06-21 2012-09-04 Saint-Gobain Ceramics & Plastics, Inc. Kiln post
JP6560767B2 (ja) * 2016-02-10 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、基板保持具及び半導体装置の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2448820A1 (de) * 1973-10-16 1975-04-17 Claude Simon Brennstuetzen fuer brenngut
DE2453509A1 (de) * 1973-11-15 1975-05-22 Philips Nv Verfahren zur behandlung einer anzahl scheiben in einem reaktiven gasstrom, insbesondere zur herstellung von halbleiteranordnungen
US4153164A (en) * 1978-06-13 1979-05-08 Kasper Instruments, Inc. Carrier for semiconductive wafers
FR2415785A1 (fr) * 1978-01-30 1979-08-24 Allied Insulators Ltd Dispositif dit cremaillere de support d'articles de vaisselle plate en matiere refractaire ou ceramique dans un four de cuisson
DE2722545C2 (de) * 1977-05-18 1984-03-08 Kurt Dr.-Ing. 7802 Merzhausen Heber Diffusionsofen zur Behandlung von Halbleitersubstraten

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB601880A (en) * 1945-10-10 1948-05-13 Malkin Tiles Burslem Ltd Improvements relating to means for supporting tiles during firing
US2923997A (en) * 1960-02-09 emmerling
US1841641A (en) * 1929-08-12 1932-01-19 American Encaustic Tiling Comp Tile setter
US1941941A (en) * 1931-04-22 1934-01-02 William W Irwin Ware support for kilns
FR720571A (fr) * 1931-07-24 1932-02-22 Manufactures Ceramiques D Hemi Support de cuisson pour carreaux de faïence
US1920589A (en) * 1932-10-10 1933-08-01 Payne George Ralph Ring cup for fictile pipes
US2567609A (en) * 1949-08-18 1951-09-11 Lovatt James William Alexander Support for ceramic ware during firing
GB1533799A (en) * 1976-10-15 1978-11-29 Acme Marls Ltd Supports for ceramic ware
JPS5691417A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Heating treatment device for wafer
JPS61267317A (ja) * 1985-05-21 1986-11-26 Toshiba Corp 縦型拡散炉用ボ−ト

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2448820A1 (de) * 1973-10-16 1975-04-17 Claude Simon Brennstuetzen fuer brenngut
DE2453509A1 (de) * 1973-11-15 1975-05-22 Philips Nv Verfahren zur behandlung einer anzahl scheiben in einem reaktiven gasstrom, insbesondere zur herstellung von halbleiteranordnungen
DE2722545C2 (de) * 1977-05-18 1984-03-08 Kurt Dr.-Ing. 7802 Merzhausen Heber Diffusionsofen zur Behandlung von Halbleitersubstraten
FR2415785A1 (fr) * 1978-01-30 1979-08-24 Allied Insulators Ltd Dispositif dit cremaillere de support d'articles de vaisselle plate en matiere refractaire ou ceramique dans un four de cuisson
US4153164A (en) * 1978-06-13 1979-05-08 Kasper Instruments, Inc. Carrier for semiconductive wafers

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
High pressure Oxidation of Silicon by the Pyrogenic or Pumped Water Technique, In: Solid State Technology, Dez. 1981, Bd. 24, S. 87-93 *
KATZ L.E. et al *

Also Published As

Publication number Publication date
DE3620223C2 (enExample) 1990-02-15
US4802842A (en) 1989-02-07
JPS6216516A (ja) 1987-01-24

Similar Documents

Publication Publication Date Title
DE2153103A1 (de) Integrierte Schaltungsanordnung und Verfahren zur Herstellung derselben
DE19649508A1 (de) Halter für Halbleiterplatten
DE32801T1 (de) Verfahren zum zerteilen von halbleiterplaettchen.
DE2257834A1 (de) Verfahren zur herstellung eines halbleiterbauelementes
DE2838818A1 (de) Lichtemittierende diodenanordnung fuer farbwiedergabe und verfahren zur herstellung
DE2238450A1 (de) Halbleiterbaugruppe und verfahren zur herstellung derselben
DE3620223A1 (de) Einrichtung zum herstellen einer halbleitervorrichtung
DE2115455B2 (de) Verfahren zum Herstellen individueller Halbleiterbauelemente unterschiedlicher elektrischer Leitfähigkeitscharakteristiken auf einem isolierenden Substrat
DE2025611A1 (enExample)
DE69029936T2 (de) Diodenmatrixtrennung
DE2931432A1 (de) Eindiffundieren von aluminium in einem offenen rohr
EP0234427B1 (de) Zweikomponenten-Kohlebürste
DE1965408C3 (de) Verfahren zum Herstellen eines Halbleiterbauelementes
DE102019207772A1 (de) Verfahren zum Abscheiden einer epitaktischen Schicht auf einer Vorderseite einer Halbleiterscheibe und Vorrichtung zur Durchführung des Verfahrens
DE1564015A1 (de) Planares Halbleiterbauelement und Verfahren zur Herstellung von UEbergaengen in planaren Halbleiterbauelementen
DE2730358B2 (de) Verfahren zum aufeinanderfolgenden Abscheiden einkristalliner Schichten auf einem Substrat nach der Flüssigphasen-Schiebeepitaxie
DE3617229A1 (de) Strahlungsdetektor
DE2529484C3 (de) Verfahren und Vorrichtung zum epitaktischen Abscheiden von Silicium auf einem Substrat
DE681324T1 (de) Verfahren zur Herstellung einer Feldoxyd-Zone mit unterliegender selbst-alignierten Feldimplantation unter Verwendung einer Niedrigtemperatur-Oxydschicht.
DE3021021A1 (de) Verfahren zum selektiven zuechten einer fluessigphasen-epitaxieschicht auf einem halbleitersubstrat
DE2163075A1 (enExample)
DE3617927A1 (de) Halbleiterelement
DE2026678A1 (de) Verfahren zum Herstellen einer Halbleiteranordnung
DE2264967A1 (de) Magnetdomaenen-fortbewegungssystem
DE4244771C2 (de) Verfahren zur Herstellung einer Halbleitereinrichtung mit Polysiliziumwiderstandsschichten

Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: PRUFER & PARTNER GBR, 81545 MUENCHEN

8339 Ceased/non-payment of the annual fee