DE3587376D1 - Hochaufloesende bildsensormatrix mit amorphen photodioden. - Google Patents

Hochaufloesende bildsensormatrix mit amorphen photodioden.

Info

Publication number
DE3587376D1
DE3587376D1 DE8585102902T DE3587376T DE3587376D1 DE 3587376 D1 DE3587376 D1 DE 3587376D1 DE 8585102902 T DE8585102902 T DE 8585102902T DE 3587376 T DE3587376 T DE 3587376T DE 3587376 D1 DE3587376 D1 DE 3587376D1
Authority
DE
Germany
Prior art keywords
photodiods
amorphous
image sensor
resolution image
sensor matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585102902T
Other languages
English (en)
Other versions
DE3587376T2 (de
Inventor
Hiroyuki Uchida
Setsuo Kaneko
Toshio Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59047836A external-priority patent/JPS60192361A/ja
Priority claimed from JP59092136A external-priority patent/JPS60235456A/ja
Priority claimed from JP59092138A external-priority patent/JPS60235457A/ja
Priority claimed from JP59134313A external-priority patent/JPS6114748A/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3587376D1 publication Critical patent/DE3587376D1/de
Application granted granted Critical
Publication of DE3587376T2 publication Critical patent/DE3587376T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE85102902T 1984-03-13 1985-03-13 Hochauflösende Bildsensormatrix mit amorphen Photodioden. Expired - Fee Related DE3587376T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP59047836A JPS60192361A (ja) 1984-03-13 1984-03-13 カラ−イメ−ジセンサ
JP59092136A JPS60235456A (ja) 1984-05-09 1984-05-09 イメ−ジセンサ
JP59092138A JPS60235457A (ja) 1984-05-09 1984-05-09 イメ−ジセンサ
JP59134313A JPS6114748A (ja) 1984-06-29 1984-06-29 カラ−イメ−ジセンサ

Publications (2)

Publication Number Publication Date
DE3587376D1 true DE3587376D1 (de) 1993-07-08
DE3587376T2 DE3587376T2 (de) 1993-10-14

Family

ID=27462110

Family Applications (1)

Application Number Title Priority Date Filing Date
DE85102902T Expired - Fee Related DE3587376T2 (de) 1984-03-13 1985-03-13 Hochauflösende Bildsensormatrix mit amorphen Photodioden.

Country Status (3)

Country Link
US (2) US4758734A (de)
EP (1) EP0154997B1 (de)
DE (1) DE3587376T2 (de)

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US5026980A (en) * 1987-04-17 1991-06-25 Ois Optical Imaging Systems, Inc. Light biased photoresponsive array having low conductivity regions separating individual cells
DE3881279T2 (de) * 1987-05-22 1994-01-13 Oki Electric Ind Co Ltd Bildsensor vom Typ "direkter Kontakt".
JPH07120770B2 (ja) * 1987-07-03 1995-12-20 キヤノン株式会社 光電変換装置
US5204762A (en) * 1987-10-30 1993-04-20 Canon Kabushiki Kaisha Image reading device
JP2594992B2 (ja) * 1987-12-04 1997-03-26 株式会社日立製作所 固体撮像装置
JPH01164165A (ja) * 1987-12-21 1989-06-28 Canon Inc センサ駆動装置
FR2627922B1 (fr) * 1988-02-26 1990-06-22 Thomson Csf Matrice photosensible a deux diodes par point, sans conducteur specifique de remise a niveau
US4904980A (en) * 1988-08-19 1990-02-27 Westinghouse Electric Corp. Refractory resistors with etch stop for superconductor integrated circuits
FR2638893B1 (fr) * 1988-11-10 1990-12-14 Thomson Tubes Electroniques Substrat electriquement isolant
GB2228366B (en) * 1989-02-21 1993-09-29 Canon Kk Photoelectric converter and image reading apparatus mounting the same
US5079415A (en) * 1989-04-03 1992-01-07 Ricoh Company, Ltd. Apparatus for converting optical information into electrical information signal, information storage element and method for storing information in the information storage element
US4962303A (en) * 1989-06-27 1990-10-09 The United States Of America As Represented By The Secretary Of The Navy Infrared image detector utilizing Schottky barrier junctions
GB2238427A (en) * 1989-11-24 1991-05-29 Philips Electronic Associated Thin film diode devices and active matrix addressed display devices incorporating such
JPH04199876A (ja) * 1990-11-29 1992-07-21 Nec Corp 固体撮像素子およびその製法
US5216274A (en) * 1991-01-11 1993-06-01 Fuji Xerox Co., Ltd. Image sensor
EP0515849A3 (en) * 1991-04-27 1993-05-19 Kanegafuchi Chemical Industry Co., Ltd. Image sensor
JPH0678104A (ja) * 1991-08-06 1994-03-18 Tohoku Pioneer Kk イメージセンサー
US5539536A (en) * 1992-03-19 1996-07-23 Sony Corporation Linear imaging sensor having improved charged transfer circuitry
JPH05335549A (ja) * 1992-06-01 1993-12-17 Matsushita Electric Ind Co Ltd 固体撮像装置およびその駆動方法
US5264693A (en) * 1992-07-01 1993-11-23 The United States Of America As Represented By The Secretary Of The Navy Microelectronic photomultiplier device with integrated circuitry
EP0791962A4 (de) * 1994-08-26 1999-03-24 Jury Alexeevich Evseev Halbleiter-gleichrichtermodul
GB9603052D0 (en) * 1996-02-14 1996-04-10 Philips Electronics Nv Image sensor
DE29609523U1 (de) * 1996-05-29 1997-10-02 Ic Haus Gmbh Optoelektronische integrierte Schaltung
US6693670B1 (en) 1999-07-29 2004-02-17 Vision - Sciences, Inc. Multi-photodetector unit cell
DE10025363A1 (de) * 2000-05-23 2001-12-20 Fraunhofer Ges Forschung Bildsensorelement und Bildsensor
US7336309B2 (en) * 2000-07-05 2008-02-26 Vision-Sciences Inc. Dynamic range compression method
AU2002223121A1 (en) * 2000-11-27 2002-06-03 Vision Sciences, Inc. Noise floor reduction in image sensors
FR2829290B1 (fr) * 2001-08-31 2004-09-17 Atmel Grenoble Sa Capteur d'image couleur sur substrat transparent et procede de fabrication
US6894265B2 (en) * 2003-01-31 2005-05-17 Foveon, Inc. Vertical color filter sensor group and semiconductor integrated circuit fabrication method for fabricating same
US6914314B2 (en) * 2003-01-31 2005-07-05 Foveon, Inc. Vertical color filter sensor group including semiconductor other than crystalline silicon and method for fabricating same
JP2004281829A (ja) * 2003-03-17 2004-10-07 Citizen Electronics Co Ltd チップ型センサ及びその製造方法
CN1826513A (zh) * 2003-07-22 2006-08-30 皇家飞利浦电子股份有限公司 用于测量色温的方法和设备
US20060157806A1 (en) * 2005-01-18 2006-07-20 Omnivision Technologies, Inc. Multilayered semiconductor susbtrate and image sensor formed thereon for improved infrared response
DE102005043918B4 (de) * 2005-05-30 2014-12-04 Osram Opto Semiconductors Gmbh Detektoranordnung und Verfahren zur Bestimmung spektraler Anteile in einer auf eine Detektoranordnung einfallenden Strahlung
US7525170B2 (en) * 2006-10-04 2009-04-28 International Business Machines Corporation Pillar P-i-n semiconductor diodes
US7482646B2 (en) * 2006-10-18 2009-01-27 Hejian Technology (Suzhou) Co., Ltd. Image sensor
DE102007012115A1 (de) 2006-11-30 2008-06-05 Osram Opto Semiconductors Gmbh Strahlungsdetektor
FR2918795B1 (fr) * 2007-07-12 2009-10-02 St Microelectronics Sa Capteur d'images a sensibilite amelioree.
CN101459184B (zh) * 2007-12-13 2011-03-23 中芯国际集成电路制造(上海)有限公司 在cmos上感测图像的系统和方法
JP5156517B2 (ja) * 2008-07-23 2013-03-06 株式会社ジャパンディスプレイイースト 液晶表示装置
US20100026824A1 (en) * 2008-07-29 2010-02-04 Shenlin Chen Image sensor with reduced red light crosstalk
KR101078396B1 (ko) * 2008-09-08 2011-11-01 (주)에프에스디글로벌 이미지 센서, 이의 제조방법 및 이를 포함하는 사무기기
US20100163759A1 (en) * 2008-12-31 2010-07-01 Stmicroelectronics S.R.L. Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process
IT1392502B1 (it) * 2008-12-31 2012-03-09 St Microelectronics Srl Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione
US20110049663A1 (en) * 2009-08-26 2011-03-03 Wen-Long Chou Structure of photodiode array
WO2018131638A1 (ja) 2017-01-15 2018-07-19 一般財団法人 総合研究奨励会 光検出器アレイ

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4405857A (en) * 1980-03-31 1983-09-20 Canon Kabushiki Kaisha Solid-state photoelectric converter
JPS575371A (en) * 1980-06-11 1982-01-12 Ricoh Co Ltd Image sensor
JPS5856363A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd 受光素子
JPS58172057A (ja) * 1982-04-02 1983-10-08 Hitachi Ltd 光学読取装置
US4542409A (en) * 1983-03-25 1985-09-17 Fuji Photo Film Co., Ltd. Single gate line interlace solid-state color imager
JPS59190775A (ja) * 1983-04-14 1984-10-29 Ricoh Co Ltd 光電変換素子の制御方式

Also Published As

Publication number Publication date
US4827117A (en) 1989-05-02
EP0154997A3 (en) 1989-03-15
EP0154997B1 (de) 1993-06-02
US4758734A (en) 1988-07-19
EP0154997A2 (de) 1985-09-18
DE3587376T2 (de) 1993-10-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee