DE3580559D1 - Vorrichtung zur herstellung einer einkristallinen halbleiterverbindung. - Google Patents

Vorrichtung zur herstellung einer einkristallinen halbleiterverbindung.

Info

Publication number
DE3580559D1
DE3580559D1 DE8585305315T DE3580559T DE3580559D1 DE 3580559 D1 DE3580559 D1 DE 3580559D1 DE 8585305315 T DE8585305315 T DE 8585305315T DE 3580559 T DE3580559 T DE 3580559T DE 3580559 D1 DE3580559 D1 DE 3580559D1
Authority
DE
Germany
Prior art keywords
producing
crystalline semiconductor
semiconductor connection
connection
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585305315T
Other languages
German (de)
English (en)
Inventor
Syoichi C O Patent D Washizuka
Masayuki C O Patent D Watanabe
Sadao C O Patent Divis Yashiro
Masae C O Patent Div Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3580559D1 publication Critical patent/DE3580559D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8585305315T 1984-09-05 1985-07-25 Vorrichtung zur herstellung einer einkristallinen halbleiterverbindung. Expired - Lifetime DE3580559D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59185726A JPS6163593A (ja) 1984-09-05 1984-09-05 化合物半導体単結晶の製造装置

Publications (1)

Publication Number Publication Date
DE3580559D1 true DE3580559D1 (de) 1990-12-20

Family

ID=16175777

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585305315T Expired - Lifetime DE3580559D1 (de) 1984-09-05 1985-07-25 Vorrichtung zur herstellung einer einkristallinen halbleiterverbindung.

Country Status (4)

Country Link
US (1) US4686091A (enExample)
EP (1) EP0177132B1 (enExample)
JP (1) JPS6163593A (enExample)
DE (1) DE3580559D1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5207992A (en) * 1986-12-26 1993-05-04 Toshiba Ceramics Co., Ltd. Silicon single crystal pulling-up apparatus
DE3743951A1 (de) * 1986-12-26 1988-07-07 Toshiba Ceramics Co Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben
FR2614404B1 (fr) * 1987-04-23 1989-06-09 Snecma Four de coulee de pieces a structure orientee, a ecran thermique deplacable
US4822449A (en) * 1987-06-10 1989-04-18 Massachusetts Institute Of Technology Heat transfer control during crystal growth
JPH0639352B2 (ja) * 1987-09-11 1994-05-25 信越半導体株式会社 単結晶の製造装置
JP2517091B2 (ja) * 1988-12-28 1996-07-24 三菱化学株式会社 単結晶成長方法及び装置
US5363796A (en) * 1991-02-20 1994-11-15 Sumitomo Metal Industries, Ltd. Apparatus and method of growing single crystal
EP0591525B1 (en) * 1991-06-24 1997-09-03 Komatsu Electronic Metals Co., Ltd Device for pulling up single crystal
DE4130253C2 (de) * 1991-09-12 2001-10-04 Sgl Carbon Ag Mehrteiliger Stütztiegel und Verfahren zu seiner Herstellung
US7491270B2 (en) * 2004-10-26 2009-02-17 Sumco Corporation Heat shield member and single crystal pulling device
KR100888221B1 (ko) * 2007-03-16 2009-03-12 가부시키가이샤 사무코 열차폐 부재 및 이를 이용한 단결정 인상 장치
CN101755076B (zh) 2007-06-14 2013-07-17 长青太阳能股份有限公司 具有至少一个开口的带状晶拉晶炉后热器
KR101303519B1 (ko) * 2011-03-21 2013-09-03 주식회사 엘지실트론 단결정 잉곳 성장용 열 쉴드 및 이를 포함하는 단결정 잉곳 성장장치와 단결정 잉곳 성장장치용 열 쉴드에 대한 오염 제거방법
US20130239621A1 (en) * 2011-09-14 2013-09-19 MEMC Singapore, Pte. Ltd. (UEN200614797D) Directional Solidification Furnace With Laterally Movable Insulation System
KR101467103B1 (ko) * 2013-06-21 2014-11-28 주식회사 엘지실트론 실리콘 단결정 성장 장치 및 그 성장 방법
JP2020121767A (ja) * 2019-01-31 2020-08-13 田中貴金属工業株式会社 フランジ部を有する高温用容器
CN111733449B (zh) * 2020-07-07 2021-04-27 上海新昇半导体科技有限公司 晶棒生长设备及生长方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US31473A (en) * 1861-02-19 Improvement in fire-arms
US92511A (en) * 1869-07-13 Isaac j
US1370113A (en) * 1920-07-31 1921-03-01 Janusonis Jonas Protecting-cover for stoves
SU141629A1 (ru) * 1961-02-23 1961-11-30 А.Я. Губенко Устройство дл получени монокристаллов, например, германи
US3342559A (en) * 1964-04-27 1967-09-19 Westinghouse Electric Corp Apparatus for producing dendrites
US3511610A (en) * 1966-10-14 1970-05-12 Gen Motors Corp Silicon crystal growing
US3715194A (en) * 1970-10-29 1973-02-06 Union Carbide Corp Melt grown alumina crystals and process therefor
GB1377487A (en) * 1970-12-23 1974-12-18 Tokyo Shibaura Electric Co Heat resistant composite materials
US3898051A (en) * 1973-12-28 1975-08-05 Crystal Syst Crystal growing
USRE31473E (en) 1977-02-07 1983-12-27 Texas Instruments Incorporated System for fabrication of semiconductor bodies
JPS55113693A (en) * 1979-02-23 1980-09-02 Hitachi Ltd Semiconductor single crystal producing device
JPS57181356A (en) * 1981-04-30 1982-11-08 Hitachi Ltd Sintered aluminum nitride body with high heat conductivity
JPS57205397A (en) * 1981-06-12 1982-12-16 Oki Electric Ind Co Ltd Method and apparatus for growing single crystal
JPS5914440B2 (ja) * 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法

Also Published As

Publication number Publication date
EP0177132A3 (en) 1988-04-27
JPS6365640B2 (enExample) 1988-12-16
US4686091A (en) 1987-08-11
JPS6163593A (ja) 1986-04-01
EP0177132A2 (en) 1986-04-09
EP0177132B1 (en) 1990-11-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)