DE3538328C2 - - Google Patents

Info

Publication number
DE3538328C2
DE3538328C2 DE3538328A DE3538328A DE3538328C2 DE 3538328 C2 DE3538328 C2 DE 3538328C2 DE 3538328 A DE3538328 A DE 3538328A DE 3538328 A DE3538328 A DE 3538328A DE 3538328 C2 DE3538328 C2 DE 3538328C2
Authority
DE
Germany
Prior art keywords
solution
tungsten
substrate
chlorine
halogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3538328A
Other languages
German (de)
English (en)
Other versions
DE3538328A1 (de
Inventor
Robert Winston Schenectady N.Y. Us Stoll
Michael Risley Rexford N.Y. Us Maclaury
Ronald Harvey Schenectady N.Y. Us Wilson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE3538328A1 publication Critical patent/DE3538328A1/de
Application granted granted Critical
Publication of DE3538328C2 publication Critical patent/DE3538328C2/de
Granted legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H10P14/432—

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19853538328 1984-11-05 1985-10-28 Verfahren zum selektiven abscheiden von wolfram auf leitenden und halbleitenden oberflaechen eines substrates Granted DE3538328A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/668,454 US4552783A (en) 1984-11-05 1984-11-05 Enhancing the selectivity of tungsten deposition on conductor and semiconductor surfaces

Publications (2)

Publication Number Publication Date
DE3538328A1 DE3538328A1 (de) 1986-05-07
DE3538328C2 true DE3538328C2 (en:Method) 1987-05-27

Family

ID=24682373

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853538328 Granted DE3538328A1 (de) 1984-11-05 1985-10-28 Verfahren zum selektiven abscheiden von wolfram auf leitenden und halbleitenden oberflaechen eines substrates

Country Status (3)

Country Link
US (1) US4552783A (en:Method)
JP (1) JPS61113769A (en:Method)
DE (1) DE3538328A1 (en:Method)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4699801A (en) * 1985-02-28 1987-10-13 Kabuskiki Kaisha Toshiba Semiconductor device
US4741928A (en) * 1985-12-27 1988-05-03 General Electric Company Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces
JPS62216224A (ja) * 1986-03-17 1987-09-22 Fujitsu Ltd タングステンの選択成長方法
US4849377A (en) * 1986-05-27 1989-07-18 General Electric Company Active area planarization with self-aligned contacts
US4968644A (en) * 1986-06-16 1990-11-06 At&T Bell Laboratories Method for fabricating devices and devices formed thereby
JPS6347364A (ja) * 1986-08-15 1988-02-29 Nippon Telegr & Teleph Corp <Ntt> 化学的気相成長法およびその装置
JPS6360281A (ja) * 1986-08-29 1988-03-16 Fujitsu Ltd 気相成長方法
US4751101A (en) * 1987-04-30 1988-06-14 International Business Machines Corporation Low stress tungsten films by silicon reduction of WF6
US5212400A (en) * 1988-02-18 1993-05-18 International Business Machines Corporation Method of depositing tungsten on silicon in a non-self-limiting CVD process and semiconductor device manufactured thereby
US5071788A (en) * 1988-02-18 1991-12-10 International Business Machines Corporation Method for depositing tungsten on silicon in a non-self-limiting CVD process and semiconductor device manufactured thereby
US4998152A (en) * 1988-03-22 1991-03-05 International Business Machines Corporation Thin film transistor
US4822753A (en) * 1988-05-09 1989-04-18 Motorola, Inc. Method for making a w/tin contact
US4931102A (en) * 1988-09-01 1990-06-05 Eaton Corporation Metal cleaning process
JPH04120732A (ja) * 1990-09-12 1992-04-21 Hitachi Ltd 固体素子及びその製造方法
US5261966A (en) * 1991-01-28 1993-11-16 Kabushiki Kaisha Toshiba Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns
US5633201A (en) * 1992-11-30 1997-05-27 Hyundai Electronics Industries, Co., Ltd. Method for forming tungsten plugs in contact holes of a semiconductor device
US6274292B1 (en) 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
US7804115B2 (en) 1998-02-25 2010-09-28 Micron Technology, Inc. Semiconductor constructions having antireflective portions
US6281100B1 (en) * 1998-09-03 2001-08-28 Micron Technology, Inc. Semiconductor processing methods
US6268282B1 (en) 1998-09-03 2001-07-31 Micron Technology, Inc. Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
US6828683B2 (en) 1998-12-23 2004-12-07 Micron Technology, Inc. Semiconductor devices, and semiconductor processing methods
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
JP4741769B2 (ja) * 1999-07-26 2011-08-10 東京エレクトロン株式会社 半導体装置の製造方法
US7067414B1 (en) 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US6440860B1 (en) 2000-01-18 2002-08-27 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
USD669437S1 (en) 2011-01-06 2012-10-23 Wilson Jr Robert M Insulator

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2151127C3 (de) * 1970-12-16 1981-04-16 International Business Machines Corp., 10504 Armonk, N.Y. Verfahren zum Abscheiden eines Metallisierungsmusters und seine Anwendung
US3988256A (en) * 1974-04-03 1976-10-26 Allied Chemical Corporation Photoresist stripper rinse
US4075367A (en) * 1976-03-18 1978-02-21 Ncr Corporation Semiconductor processing of silicon nitride
US4159917A (en) * 1977-05-27 1979-07-03 Eastman Kodak Company Method for use in the manufacture of semiconductor devices
US4264374A (en) * 1978-09-25 1981-04-28 International Business Machines Corporation Cleaning process for p-type silicon surface
JPS55158275A (en) * 1979-05-28 1980-12-09 Hitachi Ltd Corrosion preventing method for al and al alloy
US4426311A (en) * 1980-07-07 1984-01-17 Allied Corporation Methylene chloride-methane sulfonic acid stripping compositions and methods for using same
JPS5776833A (en) * 1980-09-04 1982-05-14 Applied Materials Inc Heat resistant metal depositing method and product thereof
US4404235A (en) * 1981-02-23 1983-09-13 Rca Corporation Method for improving adhesion of metal film on a dielectric surface
US4349408A (en) * 1981-03-26 1982-09-14 Rca Corporation Method of depositing a refractory metal on a semiconductor substrate
US4380490A (en) * 1981-03-27 1983-04-19 Bell Telephone Laboratories, Incorporated Method of preparing semiconductor surfaces
US4517225A (en) * 1983-05-02 1985-05-14 Signetics Corporation Method for manufacturing an electrical interconnection by selective tungsten deposition

Also Published As

Publication number Publication date
US4552783A (en) 1985-11-12
DE3538328A1 (de) 1986-05-07
JPS61113769A (ja) 1986-05-31
JPS6149388B2 (en:Method) 1986-10-29

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: SIEB, R., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 6947 LAUDENBACH

8339 Ceased/non-payment of the annual fee