DE3518073A1 - Anordnung zum dotieren von halbleiterstaeben mit festen dotierstoffen - Google Patents

Anordnung zum dotieren von halbleiterstaeben mit festen dotierstoffen

Info

Publication number
DE3518073A1
DE3518073A1 DE19853518073 DE3518073A DE3518073A1 DE 3518073 A1 DE3518073 A1 DE 3518073A1 DE 19853518073 DE19853518073 DE 19853518073 DE 3518073 A DE3518073 A DE 3518073A DE 3518073 A1 DE3518073 A1 DE 3518073A1
Authority
DE
Germany
Prior art keywords
magazine
tube
outlet opening
dopant
pills
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19853518073
Other languages
German (de)
English (en)
Other versions
DE3518073C2 (enExample
Inventor
Wolfgang Dr.rer.nat. 8000 München Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to DE19853518073 priority Critical patent/DE3518073A1/de
Priority to JP61112413A priority patent/JPS61266386A/ja
Priority to US06/865,218 priority patent/US4696716A/en
Publication of DE3518073A1 publication Critical patent/DE3518073A1/de
Application granted granted Critical
Publication of DE3518073C2 publication Critical patent/DE3518073C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE19853518073 1985-05-20 1985-05-20 Anordnung zum dotieren von halbleiterstaeben mit festen dotierstoffen Granted DE3518073A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19853518073 DE3518073A1 (de) 1985-05-20 1985-05-20 Anordnung zum dotieren von halbleiterstaeben mit festen dotierstoffen
JP61112413A JPS61266386A (ja) 1985-05-20 1986-05-16 半導体棒のド−ピング装置
US06/865,218 US4696716A (en) 1985-05-20 1986-05-20 Apparatus for doping semiconductor rods with solid dopants

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853518073 DE3518073A1 (de) 1985-05-20 1985-05-20 Anordnung zum dotieren von halbleiterstaeben mit festen dotierstoffen

Publications (2)

Publication Number Publication Date
DE3518073A1 true DE3518073A1 (de) 1986-11-20
DE3518073C2 DE3518073C2 (enExample) 1989-04-27

Family

ID=6271155

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853518073 Granted DE3518073A1 (de) 1985-05-20 1985-05-20 Anordnung zum dotieren von halbleiterstaeben mit festen dotierstoffen

Country Status (3)

Country Link
US (1) US4696716A (enExample)
JP (1) JPS61266386A (enExample)
DE (1) DE3518073A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014100482A1 (en) * 2012-12-21 2014-06-26 Sunedison, Inc. Dopant funnel for loading and dispensing dopant

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7259722B2 (ja) * 2019-12-04 2023-04-18 株式会社Sumco 単結晶製造装置及び単結晶の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4270972A (en) * 1980-03-31 1981-06-02 Rockwell International Corporation Method for controlled doping semiconductor material with highly volatile dopant

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1294425A (fr) * 1961-06-23 1962-05-26 Wacker Chemie Gmbh Procédé de dopage de matières cristallisées, par exemple de métaux ou corps semiconducteurs
DE2327085C3 (de) * 1973-05-28 1979-03-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen
DE2338338C3 (de) * 1973-07-27 1979-04-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes
US4556448A (en) * 1983-10-19 1985-12-03 International Business Machines Corporation Method for controlled doping of silicon crystals by improved float zone technique

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4270972A (en) * 1980-03-31 1981-06-02 Rockwell International Corporation Method for controlled doping semiconductor material with highly volatile dopant

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014100482A1 (en) * 2012-12-21 2014-06-26 Sunedison, Inc. Dopant funnel for loading and dispensing dopant

Also Published As

Publication number Publication date
DE3518073C2 (enExample) 1989-04-27
US4696716A (en) 1987-09-29
JPH0479994B2 (enExample) 1992-12-17
JPS61266386A (ja) 1986-11-26

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee